Radiation enhanced resistive switching layers

A method of forming a resistive random access memory cell, the method comprising:

• providing a substrate comprising a first electrode layer,
• the first electrode layer comprising doped polysilicon;
• forming a layer of a resistive switching material over the first electrode layer,
• the resistive switching material comprising hafnium oxide,
• the layer of the resistive switching material having a thickness of less than 100 Angstroms;
• annealing the layer of the resistive switching material at temperatures of less than 750° C. for less than 5 minutes,
• wherein the annealed resistive switching layer is substantially free of defects causing resistive switching;
• and
• irradiating the layer of the resistive switching material after the annealing;
• wherein irradiating forms defects within the layer and improves resistive switching of the layer;
• and
• wherein the defects are unevenly distributed throughout a thickness of the layer of the resistive switching material.

A resistive random access memory cell comprising:

• a first electrode layer comprising doped polysilicon;
• a second electrode layer comprising an inert electrode material;
• and
• a layer comprising a resistive switching material,
• the layer disposed between the first electrode layer and the second electrode layer and forming interfaces with the first electrode layer and the second electrode layer,
• the resistive switching material comprising hafnium oxide having unevenly distributed electron traps such that fewer traps are present at the interface with the first electrode layer than at the interface with the second electrode layer.