Resistive Random Access Memory Access Cells Having Thermally Isolating Structures

A resistive random memory access cell comprising:

• a first layer operable as an electrode;
• a second layer comprising a thermally isolating material,
• wherein the thermally isolating material is one of porous silica, mesoporous titanium oxide, and porous crystalline silicon, and
• wherein the second layer has a porosity of between about 30% and 80%;
• and
• a third layer comprising a metal oxide having at least two resistive states, the third layer having a first resistance corresponding to one of the at least two resistive states and a second resistance corresponding to another one of the at least two resistive states, the first resistance being less than the second resistance, wherein the second layer has an electrical resistance less than the first resistance of the third layer and wherein the second layer limits heat dissipation from the third layer when the third layer switches between the at least two resistive states of the metal oxide.

A method of forming a resistive random memory access cell, the method comprising:

• forming a first layer by depositing a thermally isolating material having a thermal conductivity of less than 1 W/m*K on a surface,
• wherein the first layer is porous;
• and
• forming a second layer comprising a metal oxide having at least two resistive states above the first layer.