Sequential atomic layer deposition of electrodes and resistive switching components

A method of forming a nonvolatile memory element, the method comprising:

• forming a first layer using atomic layer deposition in a processing chamber, the first layer operable as a first electrode and comprising one of tantalum nitride, titanium nitride, or tungsten nitride;
• and
• forming a second layer using atomic layer deposition in the processing chamber, the second layer operable as a resistive switching layer and comprising one of hafnium oxide or aluminum oxide,
• wherein the second layer is formed directly over the first layer without breaking vacuum in the processing chamber between forming the first layer and forming the second layer, and
• wherein forming the second layer comprises:
• introducing a first precursor into the first processing chamber, wherein a portion of the first precursor forms a first adsorbed layer on the first layer;
• purging the first precursor from the first processing chamber;
• and
• introducing one or more of an oxygen containing reactive agent and a nitrogen containing reactive agent into the first processing chamber to convert the first adsorbed layer into the second layer.

A nonvolatile memory element comprising:

• a first layer operable as a first electrode and formed using atomic layer, the first layer being free of oxygen;
• and
• a second layer operable as a resistive switching layer and directly interfacing the first layer, the second layer formed using atomic layer deposition,
• wherein the second layer has a thickness of less than 50 Angstroms.