Adaptable illuminating apparatus, system, and method for extreme ultra-violet light

A semi-conductor inspection system, comprising:

• a plasma source arranged to generate extreme ultra-violet (EUV) light;
• a focusing assembly including:
• a first mirror arranged to reflect the EUV light from the plasma source;
• and,
• a second mirror arranged to focus the EUV, light reflected from the first mirror, onto a first intermediate focus plane;
• and,
• an optical component in the first intermediate focus plane, arranged to receive the EUV light reflected from the second mirror.

A homogenizing tunnel, comprising:

• a first aperture having a first shape and a first size and arranged to receive extreme ultra-violet (EUV) light;
• a second aperture having a second shape and a second size;
• and,
• a passageway connecting the first and second apertures and arranged to homogenize the EUV light received by the first aperture, wherein:
• the first shape is different from the second shape;
• or,
• the first size is different from the second size.

A semi-conductor inspection system, comprising:

• a plasma source arranged to generate extreme ultra-violet (EUV) light;
• an illuminating apparatus including at least one mirror arranged to reflect the EUV light from the plasma source and focus the EUV light onto a first intermediate focus plane;
• and, a homogenizing tunnel including:
• a first aperture positioned at the first intermediate focus plane and having a first shape and a first size;
• a second aperture having a second shape and a second size;
• and,
• a passageway connecting the first and second apertures, wherein:
• the EUV light focused by the second mirror at the first intermediate focus plane is arrange to enter the homogenizing tunnel at the first aperture and exit the homogenizing tunnel at the second aperture;
• and,
• the first shape is different from the second shape;
• or,
• the first size is different from the second size.

A method for homogenizing light in a semi-conductor inspection system, comprising:

• focusing, onto a first intermediate focus plane and using at least one mirror, extreme ultra-violet (EUV) light generated by a plasma source;
• transmitting the EUV light focused on the first intermediate focus plane into a first aperture of a homogenizing tunnel;
• transmitting the EUV light focused on the first intermediate focus plane along a tapered passageway for the homogenizing tunnel;
• reflecting the EUV light focused on the first intermediate focus plane from a plurality of surfaces of the passageway;
• and,
• transmitting the EUV light focused on the first intermediate focus plane and the EUV light reflected from the plurality of surfaces out of the homogenizing tunnel through a second aperture of the tunnel for use in a semi-conductor inspection system.

A method for focusing light in a semi-conductor inspection system, comprising:

• generating first extreme ultra-violet (EUV) light using a first plasma source having a first intensity and a first angular distribution of intensity;
• focusing, using first and second mirrors, the first EUV light onto an intermediate focus plane for use in semi-conductor inspection;
• generating second extreme ultra-violet (EUV) light using a second plasma source having a second intensity or a second angular distribution of intensity;
• focusing, using third and fourth mirrors, different from the first and second mirrors respectively, the second EUV light onto the intermediate focus plane, wherein:
• the first plasma source and the first and second mirrors occupy a first minimum space within the semi-conductor inspection system;
• the second plasma source and the third and fourth mirrors occupy a second minimum space within the semi-conductor inspection system;
• and,
• the first minimum space is substantially equal to the second minimum space.

A method for focusing light in a semi-conductor inspection system, comprising:

• generating first extreme ultra-violet (EUV) light using a first plasma source having a first intensity and a first angular distribution of intensity;
• focusing, using at least one first mirror, a first image, with a first size, of the first EUV light onto an intermediate focus plane;
• transmitting the first EUV light, as a first image, through a first tapering passageway for a first homogenizing tunnel with a first entrance aperture congruent with the intermediate focus plane;
• transmitting, from an exit aperture for the first tunnel, the first EUV light as the first image with the first size for use in the semi-conductor inspection system;
• generating second extreme ultra-violet (EUV) light using a second plasma source having a second intensity or a second angular distribution of intensity;
• focusing, using the at least one second mirror, a second image, with a second size different from the first size, of the second EUV light onto the intermediate focus plane;
• transmitting the second EUV light, as the second image, through a second tapering passageway for a second homogenizing tunnel with a second entrance aperture congruent with the intermediate focus plane;
• and,
• transmitting, from an exit aperture for the first tunnel, the second EUV light as the second image with the first size for use in the semi-conductor inspection system, wherein:
• a position of the intermediate focus plane is fixed with respect to the semi-conductor inspection system;
• and,
• the at least one first mirror and the at least one second mirror are in the same respective positions;
• or,
• a first minimum space occupied by the at least one first mirror is substantially equal to a second minimum space occupied by the at least one second mirror.