High Operating Temperature Quantum Dot Infrared Detector
OwnerJarrod Vaillancourtinventor
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Abstract
Methods and systems for electromagnetic detection are disclosed, including providing a high operating temperature quantum dot infrared photodetector comprising: a substrate; a bottom contacting layer atop the substrate; one or more active regions atop the bottom contacting layer; and a top contacting layer atop the one or more active regions; and exposing the high operating temperature quantum dot infrared photodetector to electromagnetic waves. Other embodiments are described and claimed.
Claims28
A high operating temperature infrared detector comprising:
- a substrate;
- a bottom contacting layer atop the substrate;
- one or more active regions atop the bottom contacting layer;
- and
- a top contacting layer atop the one or more active regions.
A high operating temperature focal plane array infrared detector comprising:
- an array of infrared photodetectors, wherein at least one infrared photodetector of the array of infrared photodetectors comprises:
- a substrate;
- a bottom contacting layer atop the substrate;
- one or more active regions atop the bottom contacting layer;
- and
- a top contacting layer atop the one or more active regions;
- and
- electrical interconnections to the array of infrared photo detectors.
A method of electromagnetic detection comprising:
- providing a high operating temperature quantum dot infrared photodetector comprising:
- a substrate;
- a bottom contacting layer atop the substrate;
- one or more active regions atop the bottom contacting layer;
- and a top contacting layer atop the one or more active regions;
- and
- exposing the high operating temperature quantum dot infrared photodetector to electromagnetic waves.
Dependencies are inferred from the claim text.