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US 2014/0175046 A1Published application
Method for forming copper wiring
AssigneeTokyo Electron Limited
InventorsTadahiro ISHIZAKA, Toshio HASEGAWA
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Abstract
In a Cu wiring forming method for forming a Cu wiring by filling Cu in a recess which is formed in a substrate in a predetermined pattern, a barrier film formed of a TaAlN film is formed at least on the surface of the recess by thermal ALD or thermal CVD. Then a Cu film is formed to fill the recess with the Cu film. Further, the Cu wiring is formed in the recess by polishing the entire surface of the substrate by CMP.
Claims13
A Cu wiring forming method for forming a Cu wiring by filling Cu in a recess, which is formed in a substrate in a predetermined pattern, the Cu wiring forming method comprising:
- forming a barrier film formed of a TaAlN film at least on a surface of the recess by thermal ALD or thermal CVD;
- forming a Cu film to fill the recess with the Cu film;
- and
- forming a Cu wiring in the recess by polishing the entire surface of the substrate by CMP.
1 more element
Dependencies are inferred from the claim text.