Methods for achieving metal fill in small features
AssigneeApplied Materials, Inc.
InventorsCallie A. Schieffer, Robert O. Miller
Life of this patent
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Abstract
A method of electroplating on a workpiece having a sub-30 nm feature generally includes applying a chemistry to the workpiece, the chemistry including a halide ion concentration in the range of about 55 ppm to about 250 ppm and a metal cation solute species, and applying an electric waveform for less than about 5 seconds, wherein the electric waveform includes a period of ramping of current and a period of pulse plating.
Claims17
A method of electroplating on a workpiece having a sub-30 nm feature, the method comprising:
- (a) applying a chemistry to the workpiece, the chemistry including a halide ion concentration in the range of about 55 ppm to about 250 ppm and a metal cation solute species;
- and
- (b) applying an electric waveform for less than about 5 seconds, wherein the electric waveform includes a period of ramping of current and a period of pulse plating.
A method of electroplating on a workpiece having a sub-30 nm feature, the method comprising:
- (a) applying a chemistry to the workpiece, the chemistry including a halide ion concentration in the range of about 55 ppm to about 250 ppm and a metal cation solute species;
- and
- (b) applying an electric waveform, wherein the electric waveform includes a period of ramping of current for a period of less than about 100 msecs and a period of pulse plating for less than about 2 secs.
A method of electroplating on a workpiece having a sub-30 nm feature, the method comprising:
- (a) applying a chemistry to the workpiece, the chemistry including a halide ion concentration in the range of about 120 ppm to about 150 ppm and a metal cation solute species;
- and
- (b) applying an electric waveform, wherein the electric waveform includes a period of ramping of current for a period of less than about 100 msecs and a period of pulse plating for less than about 2 secs.
Dependencies are inferred from the claim text.