High Deposition Rate Chamber with Co-Sputtering Capabilities
AssigneeIntermolecular, Inc.
InventorsHong Sheng Yang, Kent Riley Child, Chi-I Lang, James Tsung
Life of this patent
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Abstract
A deposition chamber is provided. The deposition chamber includes a plurality of sputter guns disposed within the chamber, wherein the plurality of sputter guns are operable to vertically extend and retract within the chamber and wherein each gun of the plurality of sputter guns is pivotable around a pivot axis. The chamber includes a substrate support rotatable around a first axis and a second axis and a plate disposed over the substrate support. The plate has a plurality of apertures extending therethrough. The plurality of apertures includes an aperture located below each sputter gun of the plurality of sputter guns and a centrally located aperture.
Claims18
A deposition chamber, comprising:
- a plurality of sputter guns disposed within the chamber,
- a plurality of arm extensions, wherein each of the plurality of arm extensions has a pivot point;
- wherein each sputter gun of the plurality of sputter guns is respectively affixed to an arm extension of the plurality of arm extensions at the pivot point of the arm extension,
- wherein each sputter gun is operable to independently vertically extend and retract through a lid of the chamber using the arm extension,
- wherein each sputter gun of the plurality of sputter guns is pivotable around the pivot point;
- a substrate support rotatable around a first axis and a second axis,
- wherein the first axis and the second axis are parallel to one another, and
- wherein first axis and the second axis are perpendicular to a plane of the substrate;
- a plate disposed over the substrate support, the plate having a plurality of apertures extending therethrough,
- wherein the plurality of apertures includes an aperture located below each sputter gun of the plurality of sputter guns, and an aperture located at a center of the plate,
- wherein the aperture located below each sputter gun shares an axis with the respective sputter gun.
A method of combinatorially processing a substrate, comprising:
- receiving a substrate into a processing chamber;
- exposing a plurality of site-isolated regions of the substrate to a plurality of sputter guns;
- depositing a different material in each region of the plurality of regions through a physical vapor deposition process;
- rotating the substrate;
- pivoting each sputter gun of a plurality of sputter guns without breaking vacuum in the processing chamber;
- and
- depositing material from each sputter gun of a plurality of sputter guns onto one region of the plurality of regions.
Dependencies are inferred from the claim text.