Plasma processing apparatus
AssigneeTokyo Electron Limited
InventorMasahide Iwasaki
Life of this patent
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Abstract
The microwave plasma processing apparatus includes a power feeding rod that applies high frequency wave for RF bias, the upper end of which is connected to a susceptor, and the lower end of which is connected to a high frequency output terminal of a matcher in a matching unit; a cylindrical external conductor that encloses around the power feeding rod serving as an internal conductor; and a coaxial line. The coaxial line is installed with a choke mechanism configured to block undesired microwave that enters the line from a plasma producing space in a chamber, and leakage of the microwave to an RF feeding line is prevented in the middle of the line, thereby suppressing the microwave leakage.
Claims8
A plasma processing apparatus, comprising:
- a processing chamber that can be evacuated to a vacuum state;
- a processing gas supplying unit configured to supply a processing gas to the processing chamber;
- a microwave supplying unit configured to supply microwave to the processing chamber in order to produce plasma of the processing gas;
- an electrode configured to hold a substrate to be processed so as to be exposed to the plasma in the processing chamber;
- a high frequency power supplying unit configured to apply high frequency wave for RF bias via a power feeding rod having a cylindrical shape;
- an external conductor that encloses a periphery of the power feeding rod;
- and
- a choke mechanism configured to block a space propagation of the microwave between the power feeding rod and the external conductor.
Dependencies are inferred from the claim text.