Solar cell and method of manufacturing the same
AssigneeLG Electronics Inc.
InventorsSoohyun KIM, Heonmin LEE, Hyun LEE, Jinwon CHUNG
Life of this patent
Estimating the term…
Abstract
A solar cell includes a first photoelectric conversion unit based on crystalline semiconductor, a second photoelectric conversion unit on the first photoelectric conversion unit and including a plurality of conversion portions based on amorphous semiconductor, a bonding layer disposed between the first and second photoelectric conversion units to connect the first photoelectric conversion unit to the second photoelectric conversion unit, and electrodes electrically connected respectively to the first and second photoelectric conversion units.
Claims20
A solar cell comprising:
- a first photoelectric conversion unit based on crystalline semiconductor;
- a second photoelectric conversion unit on the first photoelectric conversion unit and comprising a plurality of conversion portions based on amorphous semiconductor;
- a bonding layer disposed between the first and second photoelectric conversion units to connect the first photoelectric conversion unit to the second photoelectric conversion unit;
- and
- electrodes electrically connected respectively to the first and second photoelectric conversion units.
A method of manufacturing a solar cell, the method comprising:
- forming a first photoelectric conversion unit by forming an emitter layer through doping of a semiconductor substrate comprising crystalline semiconductor with an impurity;
- forming a bonding layer on the emitter layer;
- forming a second photoelectric conversion unit comprising amorphous semiconductor on the bonding layer;
- and
- forming a first electrode electrically connected to the second photoelectric conversion unit and a second electrode electrically connected to the semiconductor substrate,
- wherein the forming of the second photoelectric conversion unit comprises:
- forming a first conversion portion on the bonding layer, the first conversion portion having a first band gap that is higher than that of the semiconductor substrate;
- and forming a second conversion portion on the first conversion portion, the second conversion portion having a second band gap that is higher than the first band gap.
Dependencies are inferred from the claim text.