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US 2014/0174363 A1Published application
Film forming apparatus
AssigneeTokyo Electron Limited
InventorTakayuki KOMIYA
Life of this patent
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Abstract
A method for forming a film includes the steps of: placing an object to be processed into a processing container; and generating M(BH4)4 gas by feeding H2 gas as carrier gas into a raw material container in which solid M(BH4)4 (where M is Zr or Hf) is accommodated to introduce a mixture gas of H2 gas and M(BH4)4 gas having a volume ratio of flow rates (H2/M(BH4)4) of 2 or more into the processing container, and deposit a MBx film (where M is Zr or Hf and x is 1.8 to 2.5) on the object using a thermal CVD.
Claims5
1-7. (canceled)
An apparatus for forming a film, comprising:
- a processing container which can be made vacuous;
- a loading table which is placed in the processing container and loads an object to be processed;
- a heater which heats the object loaded on the loading table to a predetermined temperature;
- an exhauster which exhausts the interior of the processing container in a pressure reducing manner;
- a raw material container holding solid raw material, M(BH4)4 (where M is Zr or Hf);
- a temperature regulator which cools or heat-insulates the solid raw material in the raw material container;
- a H2 gas feeder which feeds H2 gas into the raw material container;
- and
- a gas feeding pipe through which a mixture gas of H2 gas and M(BH4)4 gas is fed from the raw material container into the processing container;
- wherein the mixture gas of H2 gas and M(BH4)4 gas is introduced while controlling a flow rate of the M(BH4)4 gas evaporated by the feeding of the H2 gas and a volume ratio of flow rates (H2/M(BH4)4) of H2 gas and M(BH4)4 gas, by adjusting a flow rate of H2 gas fed into the raw material container and an internal pressure of the raw material container, and a MBx film (where M is Zr or Hf and x is 1.8 to 2.5) is deposited on the object using a thermal CVD.
7 more elements
Dependencies are inferred from the claim text.