Methods for increasing growth rate of thin films
AssigneeASM IP Holding B.V.
InventorViljami Pore
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Abstract
The present invention generally related to adding Indium precursors to deposition processes for thin films. Indium precursors are added in order to increase the growth rate per cycle of the deposition process. A plurality of deposition processes are disclosed herein which comprising a plurality of deposition cycles and providing an In-precursor pulse before at least one reactant pulse in at least one deposition cycle. The In-precursor can be added for increasing the average growth rate per cycle by at least 50% and in many examples above 500% compared to the growth rate of a similar deposition process without providing an In-precursor. Examples disclosed herein include the deposition of thin films comprising pnictides or chalcogenides, made by atomic layer deposition.
Claims31
An atomic layer deposition (ALD) process having a growth process for forming a thin film containing a group VA element, Te, Se or combination thereof on a substrate in a reaction chamber, said ALD process comprising a plurality of deposition cycles, wherein each deposition cycle comprises;
- providing a pulse of a first vapor phase reactant into the reaction chamber,
- removing excess first reactant from the reaction chamber,
- providing a pulse of a second vapor phase reactant into the reaction chamber, said second vapor phase reactant including a group VA element, Te, Se or combination thereof,
- removing excess second reactant and reaction byproducts, if any, from the reaction chamber, and
- wherein the ALD process further comprises providing an In-precursor pulse before at least one reactant pulse in at least one deposition cycle for increasing the average growth rate per cycle by at least 25% compared to the growth rate of a similar ALD process without providing an In-precursor.
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An atomic layer deposition (ALD) process having a growth process for forming a thin film containing a phase change material on a substrate in a reaction chamber, said ALD process comprising a plurality of deposition cycles, wherein each deposition cycle comprises;
- providing a pulse of a first vapor phase reactant into the reaction chamber,
- removing excess first reactant from the reaction chamber,
- providing a pulse of a second vapor phase reactant into the reaction chamber, said second vapor phase reactant including an element for the formation of the phase change material,
- removing excess second reactant and reaction byproducts, if any, from the reaction chamber, and
- wherein the ALD process further comprises providing an In-precursor pulse before at least one reactant pulse in at least one deposition cycle for increasing the average growth rate per cycle by at least 25% compared to the growth rate of a similar ALD process without providing an In-precursor.
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An deposition process having a growth process for forming a thin film containing a phase change material on a substrate in a reaction chamber, said growth process comprising a plurality of deposition cycles, wherein each deposition cycle comprises;
- providing a pulse of a first vapor phase reactant into the reaction chamber,
- removing excess first reactant from the reaction chamber,
- providing a pulse of a second vapor phase reactant into the reaction chamber, said second vapor phase reactant including an element for the formation of the phase change material,
- removing excess second reactant and reaction byproducts, if any, from the reaction chamber, and
- wherein the growth process further comprises providing an In-precursor pulse before at least one reactant pulse in at least one deposition cycle for increasing the average growth rate per cycle by at least 25% compared to the growth rate of a similar deposition process without providing an In-precursor.
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Dependencies are inferred from the claim text.