Crucible for growing crystals
AssigneePlansee SE
InventorsBernd Kleinpass, Hermann Walser
Life of this patent
Estimating the term…
Abstract
A crucible for growing crystals, in particular a sapphire single crystal, includes a base crucible made of W, Mo, Re or an alloy of these materials and an inner lining made of W, Mo, Re or an alloy of these materials. The base crucible has a substantially pot-like form. The inner lining has at least a pot-like first portion, which covers a bottom region of the base crucible, and a jacket-like second portion, which at least partially covers a wall region of the base crucible. The first portion and the second portion are formed by separate components. A process for growing sapphire single crystals using a crucible is also provided.
Claims22
1-15. (canceled)
A crucible for growing crystals including a sapphire single crystal, the crucible comprising:
- a base crucible formed of W, Mo, Re or an alloy of W, Mo or Re, said base crucible having a substantially pot-shaped form, a bottom region and a wall region;
- and
- an inner lining formed of W, Mo, Re or an alloy of W, Mo or Re, said inner lining having at least a pot-shaped first portion covering said bottom region of said base crucible and a jacket-shaped second portion at least partially covering said wall region of said base crucible;
- said first portion and said second portion formed by separate components.
A crucible for growing crystals including a sapphire single crystal, the crucible comprising:
- a base crucible formed of W, Mo, Re or an alloy of W, Mo or Re, said base crucible having a substantially pot-shaped form and a wall thickness;
- an inner lining formed of W, Mo, Re or an alloy of W, Mo or Re, said inner lining having a wall thickness smaller than said wall thickness of said base crucible;
- and
- a structure configured to facilitate separability of said inner lining from said base crucible after formation of a sapphire single crystal.
A process for growing sapphire single crystals using a crucible, the process comprising the following steps:
- providing a crucible including a bottom crucible region, a base crucible formed of W, Mo, Re or an alloy of W, Mo or Re, the base crucible having a substantially pot-shaped form, a bottom region and a wall region, and an inner lining formed of W, Mo, Re or an alloy of W, Mo or Re, the inner lining having at least a pot-shaped first portion covering the bottom region of the base crucible and a jacket-shaped second portion at least partially covering the wall region of the base crucible, the first portion and the second portion formed by separate components;
- and
- forming the sapphire single crystal by solidification from a molten mass proceeding from the bottom crucible region of the crucible.
A process for growing sapphire single crystals using a crucible, the process comprising the following steps:
- providing a crucible including a bottom region, a base crucible formed of W, Mo, Re or an alloy of W, Mo or Re, the base crucible having a substantially pot-shaped form and a wall thickness, an inner lining formed of W, Mo, Re or an alloy of W, Mo or Re, the inner lining having a wall thickness smaller than the wall thickness of the base crucible, and a structure configured to facilitate separability of the inner lining from the base crucible after formation of a sapphire single crystal;
- and
- forming the sapphire single crystal by solidification from a molten mass proceeding from the bottom region of the crucible.
Dependencies are inferred from the claim text.