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US 2014/0167098 A1Published application
Quantum Tunneling Devices and Circuits with Lattice-Mismatched Semiconductor Structures
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsZhiyuan Cheng, Calvin Sheen
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Abstract
Structures include a tunneling device disposed over first and second lattice-mismatched semiconductor materials. Process embodiments include forming tunneling devices over lattice-mismatched materials.
Claims20
A structure comprising:
- a transistor formed proximate a substrate, the substrate including a first crystalline semiconductor material;
- and
- a first tunneling diode electrically coupled to a source/drain region of the transistor, the first tunneling diode being disposed above a second crystalline semiconductor material lattice-mismatched to the first crystalline semiconductor material,
- wherein at least a portion of the second semiconductor material is disposed within a first opening disposed above the substrate, the first opening having a non-crystalline sidewall and configured to trap a majority of defects arising from the lattice-mismatch between the first crystalline semiconductor material and the second crystalline semiconductor material.
1 more element
A structure comprising:
- a static random access memory (SRAM) circuit comprising:
- a transistor in and/or on a substrate, the substrate including a first crystalline material, and
- a first resonant tunneling diode (RTD) proximate an opening disposed above the substrate, the opening comprising a non-crystalline sidewall, the first RTD being coupled to a source/drain region of the transistor, the first RTD including a crystalline material lattice-mismatched to the first crystalline material.
A structure comprising:
- a tunneling diode structure in an opening of a dielectric layer over a substrate, the substrate comprising a first crystalline material, the tunneling diode structure comprising a second crystalline material lattice mismatched to the first crystalline material, the second crystalline material comprising defects arising from the lattice-mismatch, a majority of the defects arising from the lattice-mismatch terminating at a sidewall of the second crystalline material;
- and
- a magnetic tunnel junction structure over the tunneling diode, the magnetic tunnel junction structure comprising a magnetic pinned layer over the tunneling diode, a tunnel barrier layer over the magnetic pinned layer, and a magnetic free layer over the barrier layer.
Dependencies are inferred from the claim text.