# US 2014/0157223 A1 · Circuit and layout design methods and logic cells for soft error hard integrated circuits

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- Number: US 2014/0157223 A1
- Document ID: US20140157223A1
- Status: Published application
- Kind: A1
- Application number: 14/060,162
- Filed: 2013-10-22
- Published: 2014-06-05
- Earliest claimed: 2008-01-17
- Inventors: Klas Olof Lilja
- Web page: https://patentgrep.com/patent/US20140157223A1

## CPC

- G06F 30/392: Floor-planning or layout, e.g. partitioning or placement
- G06F 30/39: Circuit design at the physical level (physical level design for reconfigurable circuits G06F30/347)
- G06F 30/398: Design verification or optimisation, e.g. using design rule check [DRC], layout versus schematics [LVS] or finite element methods [FEM] (optical proximity correction [OPC] design processes G03F1/36)
- H03K 19/0033: {Radiation hardening}
- H03K 19/00338: {In field effect transistor circuits}
- H03K 19/20: characterised by logic function, e.g. AND, OR, NOR, NOT circuits (H03K19/003 - H03K19/01 take precedence)
- H10D 89/10: Integrated device layouts
- G06F 2119/18: Manufacturability analysis or optimisation for manufacturability
- Y02P 90/02: Total factory control, e.g. smart factories, flexible manufacturing systems [FMS] or integrated manufacturing systems [IMS]
- G06F: ELECTRIC DIGITAL DATA PROCESSING (computer systems based on specific computational models G06N)
- H03K: PULSE TECHNIQUE (measuring pulse characteristics G01R; modulating sinusoidal oscillations with pulses H03C; transmission of digital information H04L; discriminator circuits detecting phase difference between two signals by counting or integrating cycles of oscillation H03D3/04; automatic control, starting, synchronisation or stabilisation of generators of electronic oscillations or pulses where the type of generator is irrelevant or unspecified H03L; coding, decoding or code conversion, in general H03M)
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- Y02P: CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS

## Abstract

In various embodiments, an integrated circuit layout is disclosed. In one embodiments, the integrated circuit layout comprises a first contact area from a first logic cell and a second contact area from a second logic cell. The second contact area comprises a non-zero, non-opposing effect with respect to the first contact area. The first contact area and the second contact area comprise a first distance. When the first distance is below a predetermined threshold the first logic cell and the second logic cell are placed along a first R-line of the circuit and a third contact area comprising an opposing effect with respect to the first contact area and the second contact area is placed between the first contact area and second contact area.

## Claims

### Claim 1

An integrated circuit comprising:
a first contact area from a first logic cell; and
a second contact area from a second logic cell comprising a non-zero, non-opposing effect with respect to the first contact area, wherein the first contact area and the second contact area comprise a first distance, wherein when the first distance is below a predetermined threshold the first logic cell and the second logic cell are placed along a first R-line of the circuit and a third contact area comprising an opposing effect with respect to the first contact area and the second contact area is placed between the first contact area and second contact area.

### Claim 2 (depends on 1)

The integrated circuit of claim 1, wherein when the first distance is equal to or greater than the predetermined threshold, a filter cell is inserted between the first contact area and the second contact area to decouple the first contact area and the second contact area, and wherein the first contact area is placed along the first R-line and the second contact area is placed along a second R-line.

### Claim 3 (depends on 2)

The integrated circuit of claim 2, wherein the filter cell is placed at least partially along the second R-line.

### Claim 4 (depends on 3)

The integrated circuit of claim 3, wherein the filter cell comprises a first circuit path comprising one or more contact areas placed along the first R-line and a second circuit path placed along the second R-line.

### Claim 5 (depends on 2)

The integrated circuit of claim 2, wherein the filter cell comprises:
a first p-type MOSFET comprising a source coupled to a power net, a drain, and a gate coupled to an input;
a second p-type MOSFET comprising a source coupled to the drain of the first p-type MOSFET, a drain coupled to an inverse output, and a gate;
a third p-type MOSFET comprising a source coupled to the power net, a drain, and a gate coupled to an inverse input;
a fourth p-type MOSFET comprising a source coupled to the drain of the third p-type MOSFET, a drain coupled to an output, and a gate;
a first n-type MOSFET comprising a source coupled to a ground net, a drain, and a gate coupled to the input;
a second n-type MOSFET comprising a source coupled to the drain of the first n-type MOSFET, a drain coupled to the inverse output, and a gate;
a third n-type MOSFET comprising a source coupled to the ground net, a drain, and a gate coupled to the inverse input; and
a fourth n-type MOSFET comprising a source coupled to the drain of the third n-type MOSFET, a drain coupled to the output, and a gate,

### Claim 6 (depends on 5)

The integrated circuit of claim 5, wherein the gate of the second p-type MOSFET is coupled to the drain of the third n-type MOSFET, the gate of the second n-type MOSFET is coupled to the drain of the third p-type MOSFET, the gate of the fourth p-type MOSFET is coupled to the drain of the first n-type MOSFET, and the gate of the fourth n-type MOSFET is coupled to the drain of the first p-type MOSFET.

### Claim 7 (depends on 5)

The integrated circuit of claim 5, comprising: a dual redundant inverter cell coupled to the input and the inverse input, wherein the dual redundant inverter cell comprises a first output comprising the complement of the input and a second output comprising the complement of the inverse input, wherein the gate of the second p-type MOSFET and the gate of the second n-type MOSFET are coupled to the second output and the gate of the fourth p-type MOSFET and the gate of the fourth n-type MOSFET are coupled to the first output.

### Claim 8 (depends on 5)

The integrated circuit of claim 5, comprising a first node coupled to the output and a second node coupled to the inverse output, wherein the first node and the second node comprise a plurality of contact areas, and wherein the plurality of contact areas are placed along the same R-line of a circuit, and wherein the contact areas are placed such that (n-Q, n-Qi, p-Qi, p-Q)

### Claim 9 (depends on 2)

The integrated circuit of claim 2, comprising:
an output for a first input, a second input, and a third input;
an inverse output for a first inverse input, a second inverse input, and a third inverse input, wherein the output logic and the inverse output logic comprise:
a first p-type MOSFET comprising a source coupled to a power net of a circuit, a drain coupled to the output, and a gate coupled to the first input;
a second p-type MOSFET comprising a source coupled to the power net, a drain coupled to the output, and a gate coupled to the second input;
a third p-type MOSFET comprising a source coupled to the power net, a drain coupled to the output, and a gate coupled to the third input;
a fourth p-type MOSFET comprising a source coupled to the power net, a drain, and a gate coupled to the first inverse input;
a fifth p-type MOSFET comprising a source coupled to the drain of the fourth p-type MOSFET, a drain, and a gate coupled to the second inverse input; and
a sixth p-type MOSFET comprising a source coupled to the drain of the fifth p-type MOSFET, a drain coupled to the inverse output, and a gate coupled to the third inverse input.

### Claim 10 (depends on 9)

The integrated circuit of claim 9, wherein the output logic and the inverse output logic comprises:
a first n-type MOSFET comprising a source coupled to a ground net of the circuit, a drain, and a gate coupled to the first input;
a second n-type MOSFET comprising a source coupled to the drain of the first n-type MOSFET, a drain, and a gate coupled to the second input;
a third n-type MOSFET comprising a source coupled to the drain of the second n-type MOSFET, a drain coupled to the output Q, and a gate coupled to the third input;
a fourth n-type MOSFET comprising a source coupled to the ground net, a drain coupled to the output Qi, and a gate coupled to the first inverse input;
a fifth n-type MOSFET comprising a source coupled to the ground net, a drain coupled to the output Qi, and a gate coupled to the second inverse input;
a sixth n-type MOSFET comprising a source coupled to the ground net, a drain coupled to the output Qi, and a gate coupled to the third inverse input.

### Claim 11

An integrated circuit cell comprising:
a first p-type MOSFET comprising a source coupled to a power net, a drain, and a gate coupled to an input;
a second p-type MOSFET comprising a source coupled to the drain of the first p-type MOSFET, a drain coupled to an inverse output, and a gate;
a third p-type MOSFET comprising a source coupled to the power net, a drain, and a gate coupled to an inverse input;
a fourth p-type MOSFET comprising a source coupled to the drain of the third p-type MOSFET, a drain coupled to an output, and a gate;
a first n-type MOSFET comprising a source coupled to a ground net, a drain, and a gate coupled to the input;
a second n-type MOSFET comprising a source coupled to the drain of the first n-type MOSFET, a drain coupled to the inverse output, and a gate;
a third n-type MOSFET comprising a source coupled to the ground net, a drain, and a gate coupled to the inverse input; and
a fourth n-type MOSFET comprising a source coupled to the drain of the third n-type MOSFET, a drain coupled to the output, and a gate.

### Claim 12 (depends on 11)

The integrated circuit cell of claim 11, wherein the gate of the second p-type MOSFET is coupled to the drain of the third n-type MOSFET, the gate of the second n-type MOSFET is coupled to the drain of the third p-type MOSFET, the gate of the fourth p-type MOSFET is coupled to the drain of the first n-type MOSFET, and the gate of the fourth n-type MOSFET is coupled to the drain of the first p-type MOSFET.

### Claim 13 (depends on 11)

The integrated circuit cell of claim 11, comprising: a dual redundant inverter cell coupled to the input and the inverse input, wherein the dual redundant inverter cell comprises a first output comprising the complement of the input and a second output comprising the complement of the inverse input, wherein the gate of the second p-type MOSFET and the gate of the second n-type MOSFET are coupled to the second output and the gate of the fourth p-type MOSFET and the gate of the fourth n-type MOSFET are coupled to the first output.

### Claim 14 (depends on 11)

The integrated circuit filter cell of claim 11, comprising a first node coupled to the output and a second node coupled to the inverse output, wherein the first node and the second node comprise a plurality of contact areas, and wherein the plurality of contact areas are placed along the same R-line of a circuit, and wherein the contact areas are placed such that each contact area has an opposing effect with respect to a preceding and a following contact.

### Claim 15 (depends on 14)

The integrated circuit cell of claim 14, wherein the plurality of contacts are placed in an order comprising n-Q, n-Qi, p-Qi, p-Q, wherein a prefix n indicates a drain or source of an n-type MOSFET and a p prefix indicates a drain or source of a p-type MOSFET, and wherein Q indicates the first output and Qi indicates the inverse output.

### Claim 16 (depends on 14)

The integrated circuit cell of claim 14, wherein the plurality of contacts are placed in an order comprising n-Q, p-Q, p-Qi, n-Qi, wherein a prefix n indicates a drain or source of an n-type MOSFET and a p prefix indicates a drain or source of a p-type MOSFET, and wherein Q indicates the first output and Qi indicates the inverse output.

### Claim 17

An integrated circuit comprising:
a first p-type MOSFET comprising a source coupled to a power net of a circuit, a drain coupled to the output, and a gate coupled to the first input;
a second p-type MOSFET comprising a source coupled to the power net, a drain coupled to the output, and a gate coupled to the second input;
a third p-type MOSFET comprising a source coupled to the power net, a drain coupled to the output, and a gate coupled to the third input;
a fourth p-type MOSFET comprising a source coupled to the power net, a drain, and a gate coupled to the first inverse input;
a fifth p-type MOSFET comprising a source coupled to the drain of the fourth p-type MOSFET, a drain, and a gate coupled to the second inverse input; and
a sixth p-type MOSFET comprising a source coupled to the drain of the fifth p-type MOSFET, a drain coupled to the inverse output, and a gate coupled to the third inverse input.

### Claim 18 (depends on 17)

The integrated circuit of claim 17, comprising
a first n-type MOSFET comprising a source coupled to a ground net of the circuit, a drain, and a gate coupled to the first input;
a second n-type MOSFET comprising a source coupled to the drain of the first n-type MOSFET, a drain, and a gate coupled to the second input;
a third n-type MOSFET comprising a source coupled to the drain of the second n-type MOSFET, a drain coupled to the output Q, and a gate coupled to the third input;
a fourth n-type MOSFET comprising a source coupled to the ground net, a drain coupled to the output Qi, and a gate coupled to the first inverse input;
a fifth n-type MOSFET comprising a source coupled to the ground net, a drain coupled to the output Qi, and a gate coupled to the second inverse input;
a sixth n-type MOSFET comprising a source coupled to the ground net, a drain coupled to the output Qi, and a gate coupled to the third inverse input,

### Claim 19 (depends on 18)

The integrated circuit of claim 18, comprising a first node coupled to the output Q and a second node coupled to the inverse output Qi, wherein the first node and the second node comprise a plurality of contact areas, and wherein the plurality of contact areas are placed along a first R-line of a circuit, and wherein the contact areas are placed such that each contact area has an opposing effect with respect to a preceding and a following contact.

### Claim 20 (depends on 19)

The integrated circuit of claim 19, wherein the plurality of contacts are placed in an order comprising n-Q, n-Qi, p-Qi, p-Q, wherein a prefix n indicates a drain or source of an n-type MOSFET and a p prefix indicates a drain or source of a p-type MOSFET, and wherein Q indicates the first output and Qi indicates the inverse output.

### Claim 21 (depends on 19)

The integrated circuit of claim 19, wherein the plurality of contacts are placed in an order comprising n-Q, p-Q, p-Qi, n-Qi, wherein a prefix n indicates a drain or source of an n-type MOSFET and a p prefix indicates a drain or source of a p-type MOSFET, and wherein Q indicates the first output and Qi indicates the inverse output.