# US 2014/0154960 A1 · Cmp pad conditioner

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- Number: US 2014/0154960 A1
- Document ID: US20140154960A1
- Status: Published application
- Kind: A1
- Application number: 14/233,489
- Filed: 2012-07-16
- Published: 2014-06-05
- Earliest claimed: 2011-07-18
- Assignees: Ehwa Diamond Industrial Co., Ltd.
- Inventors: Seh Kwang Lee; Joo Han Lee
- Web page: https://patentgrep.com/patent/US20140154960A1

## CPC

- B24B 53/017: Devices or means for dressing, cleaning or otherwise conditioning lapping tools
- B24B 53/12: Dressing tools; Holders therefor
- B24B: MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING (grinding of gear teeth B23F, of screw-threads B23G1/36; by electro-erosion B23H; abrasive or related blasting B24C; tools for grinding, buffing or sharpening B24D; polishing compositions C09G1/00; abrasives C09K3/14; electrolytic etching or polishing C25F3/00; grinding arrangements for use on assembled railway tracks E01B31/17); DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS

## Abstract

The present invention relates to a CMP pad conditioner having a substrate and a cutting tip pattern formed on at least one surface of the substrate, and more particularly to a CMP pad conditioner having cutting tip patterns, in which the cutting tip patterns have an improved structure that can increase the productivity of the CMP pad conditioner and that can sufficiently ensure the strength and safety of the cutting tip patterns.

## Claims

### Claim 1

A chemical mechanical polishing (CMP) pad conditioner, comprising:
a substrate; and
cutting tip patterns formed on at least one surface of the substrate, the cutting tip patterns comprised of:
a plurality of substrate tip portions spaced apart from each other on the substrate; and
diamond deposition tip portions formed on the plurality of substrate tip portions.

### Claim 2 (depends on 1)

The CMP pad conditioner of claim 1, wherein the plurality of substrate tip portions include one or more substrate tip portions having different heights.

### Claim 3

A chemical mechanical polishing (CMP) pad conditioner, comprising:
a substrate; and
cutting tip patterns formed on at least one surface of the substrate, the cutting tip patterns comprised of:
diamond deposition tip portions; and
a plurality of substrate tip portions spaced apart from each other on the substrate, the plurality of substrate tip portions comprising a first plurality of substrate tip portions on which the diamond deposition tip portions are formed and a second plurality of substrate tip portions on which the diamond deposition tip portions are not formed.

### Claim 4 (depends on 3)

The CMP pad conditioner of claim 3, wherein the plurality of substrate tip portions are formed to have the same height; and
the diamond deposition tip portions have the same thickness, are formed on one substrate tip portion of adjacent substrate tip portions, and are not formed on the other substrate tip portions.

### Claim 5 (depends on 1)

The CMP pad conditioner of claim 1 4, wherein the substrate tip portions are spaced apart from each other by depressions on the substrate.

### Claim 6 (depends on 1)

The CMP pad conditioner of claim 1 4, wherein the substrate tip portions have a polygonal cross-sectional shape.

### Claim 7 (depends on 1)

The CMP pad conditioner of claim 1 4, wherein the substrate tip portions have a polygonal, circular, or elliptic planar shape.

### Claim 8 (depends on 1)

The CMP pad conditioner of claim 1 4, wherein the diamond deposition tip portions have a thickness of 1 to 10 μm.

### Claim 9 (depends on 8)

The CMP pad conditioner of claim 8, wherein an upper surface of the cutting tip patterns is dressed with a wheel comprising a SiC abrasive material or a resin wheel comprising diamond grits.

### Claim 10 (depends on 1)

The CMP pad conditioner of claim 1, wherein the CMP pad conditioner further comprises a diamond coating layer formed on both the substrate and the cutting tip patterns.

### Claim 11 (depends on 1)

The CMP pad conditioner of claim 1, wherein the cutting tip patterns have a fine structure of 100 μm or less.

### Claim 12 (depends on 3)

The CMP pad conditioner of claim 3, wherein the substrate tip portions are spaced apart from each other by depressions on the substrate.

### Claim 13 (depends on 3)

The CMP pad conditioner of claim 3, wherein the substrate tip portions have a polygonal cross-sectional shape.

### Claim 14 (depends on 3)

The CMP pad conditioner of claim 3, wherein the substrate tip portions have a polygonal, circular or elliptic planar shape.

### Claim 15 (depends on 3)

The CMP pad conditioner of claim 3, wherein the diamond deposition tip portions have a thickness of 1 to 10 μm.

### Claim 16 (depends on 15)

The CMP pad conditioner of claim 15, wherein an upper surface of the cutting tip patterns is dressed with a wheel comprising an SiC abrasive material or a resin wheel comprising diamond grits.

### Claim 17 (depends on 3)

The CMP pad conditioner of claim 3, wherein the CMP pad conditioner further comprises a diamond coating layer formed on both the substrate and the cutting tip patterns.

### Claim 18 (depends on 3)

The CMP pad conditioner of claim 3, wherein the cutting tip patterns have a fine structure of 100 μm or less.