# US 2014/0154884 A1 · Erosion inhibitor for chemical mechanical polishing, slurry for chemical mechanical polishing, and chemical mechanical polishing method

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- Number: US 2014/0154884 A1
- Document ID: US20140154884A1
- Status: Published application
- Kind: A1
- Application number: 14/122,145
- Filed: 2012-05-23
- Published: 2014-06-05
- Earliest claimed: 2011-05-24
- Assignees: Kuraray Co., Ltd.
- Inventors: Mitsuru Kato; Minori Takegoshi; Chihiro Okamoto; Shinya Kato
- Web page: https://patentgrep.com/patent/US20140154884A1

## CPC

- C09G 1/02: containing abrasives or grinding agents {(abrasives as such C09K3/14; polishing of semi-conductors H10P52/40)}
- B24B 37/044: {characterised by the composition of the lapping agent}
- H10P 95/062: {involving a dielectric removal step}
- H10W 10/014: {using trench refilling with dielectric materials, e.g. shallow trench isolations}
- H10W 10/17: formed using trench refilling with dielectric materials, e.g. shallow trench isolations
- C09G: POLISHING COMPOSITIONS (French polish C09F11/00); SKI WAXES
- B24B: MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING (grinding of gear teeth B23F, of screw-threads B23G1/36; by electro-erosion B23H; abrasive or related blasting B24C; tools for grinding, buffing or sharpening B24D; polishing compositions C09G1/00; abrasives C09K3/14; electrolytic etching or polishing C25F3/00; grinding arrangements for use on assembled railway tracks E01B31/17); DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

The present invention provides an erosion inhibitor for chemical mechanical polishing, which contains compound (a) having a molecular weight of not more than 100,000 and not less than 4 hydroxyl groups, and compound (b) having not less than 4 amino groups, and which has a mass ratio of the compound (a) and the compound (b) (the compound (a)/the compound (b)) of 0.10-500.

## Claims

### Claim 1

An erosion inhibitor for chemical mechanical polishing, comprising:
a compound (a) having a molecular weight of not more than 100,000 and comprising not less than 4 hydroxyl groups, and
a compound (b) comprising not less than 4 amino groups,
wherein a mass ratio of the compound (a) and the compound (b) is 0.10-500.

### Claim 2 (depends on 1)

The erosion inhibitor according to claim 1, wherein the mass ratio of the compound (a) and the compound (b) is 0.10-100.

### Claim 3 (depends on 1)

The erosion inhibitor according to claim 1, wherein the compound (a) has a molecular weight of 100-50,000 and a hydroxyl group content of 5-40 mmol/g.

### Claim 4 (depends on 1)

The erosion inhibitor according to claim 1, wherein the compound (a) comprises a skeleton derived from a monosaccharide.

### Claim 5 (depends on 1)

The erosion inhibitor according to claim 1, wherein the compound (a) is at least one selected from the group consisting of a compound wherein 2-50 monosaccharides are bonded and a derivative thereof.

### Claim 6 (depends on 1)

The erosion inhibitor according to claim 1, wherein the compound (b) has a molecular weight of 300-100,000 and an amino group content of 3-30 mmol/g.

### Claim 7 (depends on 1)

The erosion inhibitor according to claim 1, wherein the compound (b) is at least one selected from the group consisting of
polyalkyleneimine (b1);
a polymer (b2) obtained by polymerizing 25-100 mass % of at least one monomer selected from the group consisting of allylamine, N-alkylallylamine, N,N-dialkylallylamine, diallylamine, N-alkyldiallylamine, vinylamine, vinylpyridine and N,N-dialkylaminoethyl (meth)acrylate, wherein the alkylene is an alkylene group comprising 1-6 carbon atoms, and the alkyl is an alkyl group comprising 1-4 carbon atoms, and 75-0 mass % of other monomer comprising an unsaturated double bond; and
a derivative thereof.

### Claim 8 (depends on 1)

The erosion inhibitor according to claim 1, wherein the compound (b) comprises a secondary amino group, a tertiary amino group, or both.

### Claim 9 (depends on 1)

A slurry for chemical mechanical polishing, comprising:
the erosion inhibitor according to claim 1,
an abrasive grain (c), and
water.

### Claim 10 (depends on 9)

The slurry according to claim 9, wherein the abrasive grain (c) is silica.

### Claim 11 (depends on 9)

The slurry according to claim 9, wherein a concentration of the compound (a) is 0.01-10 mass %, a concentration of the compound (b) is 0.001-5 mass %, and a concentration of the abrasive grain (c) is 0.2-30 mass %.

### Claim 12 (depends on 9)

The slurry according to claim 9, wherein the slurry has a pH of 9-13.

### Claim 13 (depends on 9)

A chemical mechanical polishing method, comprising:
polishing an insulating film by using the slurry according to claim 9.

### Claim 14 (depends on 13)

The chemical mechanical polishing method according to claim 13, wherein the insulating film is a silicon oxide film on a silicon nitride film.

### Claim 15 (depends on 2)

The erosion inhibitor according to claim 2, wherein the compound (a) has a molecular weight of 100-50,000 and a hydroxyl group content of 5-40 mmol/g.