# US 2014/0154872 A1 · Dislocation engineering using a scanned laser

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- Number: US 2014/0154872 A1
- Document ID: US20140154872A1
- Status: Published application
- Kind: A1
- Application number: 14/174,868
- Filed: 2014-02-07
- Published: 2014-06-05
- Earliest claimed: 2008-10-01
- Assignees: International Business Machines Corporation
- Applicants: International Business Machines Corporation
- Inventors: Chung Woh Lai; Xiao Hu Liu; Anita Madan; Klaus W. Schwarz; J. Campbell Scott
- Web page: https://patentgrep.com/patent/US20140154872A1

## CPC

- H10P 36/03: {within silicon bodies}
- H10D 30/751: {having composition variations in the channel regions}
- H10D 30/791: {Arrangements for exerting mechanical stress on the crystal lattice of the channel regions}
- H10P 34/42: with electromagnetic radiation, e.g. laser annealing (laser cutting H10P54/20)
- H10P 34/422: {using incoherent radiation}
- H10P 36/07: {of silicon-on-insulator structures}
- H10P 95/402: {of silicon bodies}
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

A method for generating patterned strained regions in a semiconductor device is provided. The method includes directing a light-emitting beam locally onto a surface portion of a semiconductor body; and manipulating a plurality of dislocations located proximate to the surface portion of the semiconductor body utilizing the light-emitting beam, the light-emitting beam being characterized as having a scan speed, so as to produce the patterned strained regions.

## Claims

### Claim 1

A method for manipulating dislocations from a semiconductor device, comprising:
directing a light-emitting beam locally onto a surface portion of a semiconductor body that includes active regions of the semiconductor device; and
manipulating a plurality of dislocations located proximate to the surface portion of the semiconductor body utilizing the light-emitting beam,
wherein manipulating the plurality of dislocations comprises directly scanning the plurality of dislocations with the light-emitting beam to manipulate a location of each of the plurality of dislocations on the surface portion of the semiconductor body by adjusting a temperature of the surface portion of the semiconductor body corresponding to the plurality of dislocations and adjusting a scan speed of the laser beam.

### Claim 2 (depends on 1)

The method of claim 1, wherein manipulating the plurality of dislocations further comprises heating the plurality of dislocations with the laser beam such that the plurality of dislocations are driven away from the surface portion of the semiconductor body into the substrate.