# US 2014/0154870 A1 · Method of manufacturing semiconductor wafers

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- Number: US 2014/0154870 A1
- Document ID: US20140154870A1
- Status: Published application
- Kind: A1
- Application number: 14/087,883
- Filed: 2013-11-22
- Published: 2014-06-05
- Earliest claimed: 2012-12-04
- Assignees: National Institute of Advanced Industrial Science and Technology; Fujikoshi Machinery Corp.
- Applicants: National Institute of Advanced Industrial Science and Technology; Fujikoshi Machinery Corp.
- Inventors: Yoshio NAKAMURA; Daizo ICHIKAWA; Haruo SUMIZAWA; Shiro HARA; Sommawan KHUMPUANG; Shinichi IKEDA
- Web page: https://patentgrep.com/patent/US20140154870A1

## CPC

- H10P 54/00: Cutting or separating of wafers, substrates or parts of devices
- H10P 90/12: {Preparing bulk and homogeneous wafers}
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

A method of manufacturing semiconductor wafers is provided which facilitates formation of orientation flat lines and allows beveling work without problems. The method of manufacturing semiconductor wafers according to the present invention is a method of manufacturing semiconductor wafers, in which a plurality of small-diameter wafers is cut out from a large-diameter semiconductor wafer, the method including: a marking step of forming straight groove-like orientation flat lines by a laser beam so as to cross the respective small-diameter wafers in each row in the large-diameter semiconductor wafer, wherein cutout positions of the small-diameter wafers are aligned in rows in a specific direction, collectively for each of the rows; and a cutting step of cutting out the small-diameter wafers separately from the large-diameter semiconductor wafer by a laser beam after the marking step.

## Claims

### Claim 1

A method of manufacturing semiconductor wafers, in which a plurality of small-diameter wafers is cut out from a large-diameter semiconductor wafer, the method comprising:
a marking step of forming straight groove-like orientation flat lines by a laser beam so as to cross the respective small-diameter wafers in each row in the large-diameter semiconductor wafer, wherein cutout positions of the small-diameter wafers are aligned in rows in a specific direction, collectively for each of the rows; and
a cutting step of cutting out the small-diameter wafers separately from the large-diameter semiconductor wafer by a laser beam after the marking step.

### Claim 2 (depends on 1)

The method of manufacturing semiconductor wafers according to claim 1, having a lapping step of lapping the large-diameter semiconductor wafer so as to have a required thickness, wherein the marking step and subsequent steps are performed after the lapping step.

### Claim 3 (depends on 1)

The method of manufacturing semiconductor wafers according to claim 1, wherein the straight groove-like orientation flat lines are formed so that both ends thereof reach an edge of the small-diameter wafers to be cut out.

### Claim 4 (depends on 2)

The method of manufacturing semiconductor wafers according to claim 2, wherein the straight groove-like orientation flat lines are formed so that both ends thereof reach an edge of the small-diameter wafers to be cut out.

### Claim 5 (depends on 1)

The method of manufacturing semiconductor wafers according to claim 1, wherein positions of the straight orientation flat lines are determined based on an orientation flat or a notch of the large-diameter semiconductor wafer.

### Claim 6 (depends on 2)

The method of manufacturing semiconductor wafers according to claim 2, wherein positions of the straight orientation flat lines are determined based on an orientation flat or a notch of the large-diameter semiconductor wafer.

### Claim 7 (depends on 3)

The method of manufacturing semiconductor wafers according to claim 3, wherein positions of the straight orientation flat lines are determined based on an orientation flat or a notch of the large-diameter semiconductor wafer.

### Claim 8 (depends on 4)

The method of manufacturing semiconductor wafers according to claim 4, wherein positions of the straight orientation flat lines are determined based on an orientation flat or a notch of the large-diameter semiconductor wafer.

### Claim 9 (depends on 1)

The method of manufacturing semiconductor wafers according to claim 1, wherein one-half inch size small-diameter wafers are cut out.

### Claim 10 (depends on 1)

The method of manufacturing semiconductor wafers according to claim 1, further comprising:
an outside diameter finishing step of finishing the cut out small-diameter wafer so as to have a required outside diameter;
a beveling step of beveling an outer periphery of the small-diameter wafer into a predefined shape;
an etching step of etching the beveled small-diameter wafers;
a mirror beveling step of mirror processing a beveled portion of the beveled small-diameter wafer, using a finishing grinding stone;
a polishing step of mirror processing the mirror-beveled small-diameter wafers; and
a precision cleaning step of cleaning the wafers contaminated through polishing.

### Claim 11 (depends on 10)

The method of manufacturing semiconductor wafers according to claim 10, wherein the outside diameter finishing step and the beveling step are performed at the same time with the same grinding stone using a beveling apparatus.