# US 2014/0154831 A1 · Method and Device for processing at least one crystalline Silicon-wafer or a Solar-cell wafer > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2014/0154831 A1 - Document ID: US20140154831A1 - Status: Published application - Kind: A1 - Application number: 14/094,863 - Filed: 2013-12-03 - Published: 2014-06-05 - Earliest claimed: 2012-12-03 - Assignees: Solarworld Innovations GmbH - Applicants: SolarWorld Innovations GmbH - Inventors: Martin Kutzer; Joachim Koenig; Matthias Richter - Web page: https://patentgrep.com/patent/US20140154831A1 ## CPC - H10P 54/00: Cutting or separating of wafers, substrates or parts of devices - B23K 26/36: Removing material (B23K26/55, B23K26/57 take precedence) - B23K 26/364: for making a groove or trench, e.g. for scribing a break initiation groove - H10F 71/121: {The active layers comprising only Group IV materials} - H10P 50/242: {of Group IV materials} - Y02E 10/547: Monocrystalline silicon PV cells - Y02P 70/50: Manufacturing or production processes characterised by the final manufactured product - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 - B23K: SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM - H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION - Y02E: REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION - Y02P: CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS ## Abstract In different embodiments, a method is provided for processing at least one crystalline Silicon-wafer or a Solar-cell wafer. The method may include: a movement of the wafer with respect to a laser producing a laser beam; and therefore the formation of a laser channel in the wafer by means of a laser beam, wherein a thermal budget applied on the wafer by means of the laser beam is reduced in the peripheral region of the wafer, wherein the peripheral region includes a wafer edge, through which the laser beam exits the wafer after formation of the laser channel. ## Claims ### Claim 1 A method for processing at least one crystalline silicon-wafer or a solar-cell wafer, wherein the method comprises: moving the wafer with respect to a laser producing a laser beam; and therefore forming a laser channel in the wafer by means of the laser beam, wherein a thermal budget applied on the wafer by means of the laser beam is reduced in the peripheral region of the wafer, wherein the peripheral region includes a wafer edge, through which the laser beam exits the wafer after formation of the laser channel. ### Claim 2 (depends on 1) The method according to claim 1, wherein the wafer is moved with respect to the laser outside of the peripheral region with a first speed; and wherein the wafer is moved with respect to the laser in the peripheral region with at least a second speed which is higher than the first speed. ### Claim 3 (depends on 1) The method according to claim 1, wherein the wafer is applied, outside of the peripheral region, with a first laser beam of a first laser-power; and wherein the wafer is applied, in the peripheral region, with a laser beam of a second laser-power which is lower than the first laser-power. ### Claim 4 (depends on 1) The method according to claim 1, wherein the wafer is applied, outside of the peripheral region, with a laser beam; the focusing of which is in the plane of the wafer, and wherein the wafer is applied, within the peripheral region, with a laser beam; the focussing of the laser beam is outside of the wafer plane. ### Claim 5 (depends on 1) The method according to claim 1, further comprising: dividing the wafer along the laser channel formed. ### Claim 6 (depends on 5) The method according to claim 5, wherein the wafer is broken along the laser channel formed. ### Claim 7 (depends on 1) The method according to claim 1, wherein the peripheral region is formed by a surface area of the wafer, which extends from the wafer edge maximum up to 5 cm into the wafer. ### Claim 8 A device for processing at least one crystalline silicon-wafer or a solar-cell wafer, wherein the device comprises: a laser arranged for generating a laser beam; a device for moving the wafer with respect to the laser, and a control device arranged to control the laser, and/or the device for moving the wafer in such a manner that a laser channel is formed in the wafer by means of the laser beam, wherein the thermal budget applied on the wafer by means of the laser beam is reduced in the peripheral region of the wafer, wherein the peripheral region includes a wafer edge, through which the laser beam exits the wafer after formation of the laser channel. ### Claim 9 (depends on 8) The device according to claim 8, wherein the control device is arranged for: moving the wafer with respect to the laser, outside of the peripheral region, with a first speed; and moving the wafer with respect to the laser, in the peripheral region, with at least a second speed which is higher than the first speed. ### Claim 10 (depends on 8) The device according to claim 8, wherein the control device is arranged for: applying the wafer, outside of the peripheral region, with a first laser beam of a first laser-power; and applying the wafer, in the peripheral region, with a laser beam of a second laser-power which is lower than the first laser-power. ### Claim 11 (depends on 10) The device according to claim 10, wherein the second laser-power is in the range of approximately 10% to approximately 80% below the first laser-power. ### Claim 12 (depends on 10) The device according to claim 10, wherein the second laser-power decreases constantly or in steps and is in a range of approximately 10% to approximately 80% below the first laser-power at the wafer edge. ### Claim 13 (depends on 8) The device according to claim 8, further comprising: a dividing device for dividing the wafer along the laser channel formed. ### Claim 14 (depends on 8) The device according to claim 8, wherein the device for moving the wafer is arranged for moving several wafers with respect to the laser and includes a conveyor belt for accommodating several wafers. ### Claim 15 (depends on 8) The device according to claim 8, wherein the laser is arranged for generating the laser beam with a laser-power in a range of approximately 10 Watt to approximately 30 Watt.