# US 2014/0154829 A1 · Organic light emitting display and method for fabricating the same

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- Number: US 2014/0154829 A1
- Document ID: US20140154829A1
- Status: Published application
- Kind: A1
- Application number: 14/174,341
- Filed: 2014-02-06
- Published: 2014-06-05
- Earliest claimed: 2006-06-30
- Assignees: LG Display Co., Ltd.
- Applicants: LG Display Co., Ltd.
- Inventors: Il-Su OH; Jong-Sung KIM; Hong-Woo YU; Kwang-Yeon LEE
- Web page: https://patentgrep.com/patent/US20140154829A1

## CPC

- H10K 59/122: Pixel-defining structures or layers, e.g. banks
- H10K 50/86: Arrangements for improving contrast, e.g. preventing reflection of ambient light
- H10K 59/173: comprising banks or shadow masks
- H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES

## Abstract

An organic light emitting display device (OLED) includes a transparent substrate a first electrode formed on the transparent substrate a partition wall including first and second tapered structures having different tapers and formed on the first electrode, and an organic light emitting layer stacked on both sides of the first electrode below a level of the partition wall and a second electrode. The OLED device is manufactured by, for example, forming a first electrode on a transparent substrate, forming a partition wall having first and second tapered structures on the first electrode, and forming an organic light emitting layer and a second electrode, sequentially, on both sides of the first electrode below a level of the partition wall.

## Claims

### Claim at position 1

1-5. (canceled)

### Claim 6

A method for fabricating an OLED, comprising:
providing a transparent substrate;
forming a first electrode on the transparent substrate;
forming a first silicon nitride film and a second silicon nitride film on the first electrode, wherein the second silicon nitride film is thicker than the first silicon nitride film;
etching the first silicon nitride film and the second silicon nitride film by a dry etching process to form a partition wall including a first silicon nitride film pattern and a second silicon nitride film pattern on the first electrode, wherein the first silicon nitride film pattern has a forwardly-tapered shape, and the second silicon nitride film pattern has an inversely-tapered shape, and the first silicon nitride film pattern and the second silicon nitride film pattern have different composition ratios between their silicon and nitrogen contents from each other, and wherein the forwardly-tapered shape and the inversely-tapered shape are formed simultaneously by one etching process, and wherein the forwardly-tapered shape and the inversely-tapered shape are formed by the dry etching process being processed from an interface between the first silicon nitride film and the second silicon nitride film; and
forming an organic light emitting layer and a second electrode, sequentially, on both sides of the first electrode below a level of the partition wall.

### Claim at position 3

7-11. (canceled)

### Claim 12 (depends on 6)

The method of the claim 6, wherein the first electrode is formed of ITO or a transparent material, and the second electrode is formed of Al.

### Claim at position 5

13-16. (canceled)

### Claim 17

A method for fabricating an organic light emitting display device (OLED), comprising:
providing a transparent substrate;
forming a first electrode on the transparent substrate;
forming a partition wall on the first electrode, the partition wall having a double-layered structure with first and second silicon nitride films, the first and second silicon nitride films have different composition ratio s between their silicon and nitrogen contents from each other, and wherein the partition wall having a double film structure is composed of a first tapered structure having a forwardly-tapered shape and a second tapered shape having an inversely-tapered shape, and wherein the first tapered shape and the second tapered shape are formed simultaneously by one etching process, and wherein the forwardly-tapered shape and the inversely-tapered shape are formed by the etching process being processed from an interface between the first silicon nitride film and the second silicon nitride film; and
stacking an organic light emitting layer and a second electrode on both sides of the first electrode below a level of the partition wall.

### Claim at position 7

18-20. (canceled)