# US 2014/0154828 A1 · Method for producing group iii nitride semiconductor light-emitting device

> Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt

- Number: US 2014/0154828 A1
- Document ID: US20140154828A1
- Status: Published application
- Kind: A1
- Application number: 14/093,332
- Filed: 2013-11-29
- Published: 2014-06-05
- Earliest claimed: 2012-12-04
- Assignees: Toyoda Gosei Co., Ltd.
- Applicants: Toyoda Gosei Co., Ltd.
- Inventors: Misato Mukono; Ryo Nakamura
- Web page: https://patentgrep.com/patent/US20140154828A1

## CPC

- H10H 20/812: within the light-emitting regions, e.g. having quantum confinement structures
- H10H 20/01335: {the light-emitting regions comprising nitride materials}
- H10H 20/8215: {characterised by crystalline imperfections, e.g. dislocations; characterised by the distribution of dopants, e.g. delta-doping}
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS

## Abstract

The present invention provides a method for producing a Group III nitride semiconductor light-emitting device wherein in the formation of a light-emitting layer by forming a well layer, a capping layer and a barrier layer, the well layer having superior flatness and crystallinity is formed while suppressing the occurrence of damage to the well layer. In formation of the light-emitting layer, pits are provided in the light-emitting layer so that a pit diameter D falls within a range of 120 nm to 250 nm. The light-emitting layer formation step comprises the steps of forming the barrier layer, forming the well layer, and forming the capping layer. The growth temperature of the barrier layer is higher by any temperature in a range of 65° C. to 135° C. than that of the well layer.

## Claims

### Claim 1

A method for producing a Group III nitride semiconductor light-emitting device having a Group III nitride semiconductor layer on a main surface of a substrate, the method comprising:
forming a light-emitting layer further comprises the steps of:
forming a barrier layer;
forming a well layer on the barrier layer; and
forming a capping layer on the well layer;
wherein a substrate temperature in formation of the barrier layer is higher by any temperature in a range from 65° C. to 135° C. than that in formation of the well layer; and
wherein in formation of the light-emitting layer, a mean pit diameter as measured at the top surface of the light-emitting layer is adjusted to fall within a range of 120 nm to 250 nm.

### Claim 2 (depends on 1)

The method for producing a Group III nitride semiconductor light-emitting device according to claim 1, wherein in formation of the light-emitting layer, a mean pit diameter as measured at the bottom surface of the light-emitting layer is adjusted to fall a range of 50 nm to 170 nm.

### Claim 3 (depends on 1)

The method for producing a Group III nitride semiconductor light-emitting device according to claim 1, wherein in formation of the well layer, an Indium-containing layer is formed.

### Claim 4 (depends on 2)

The method for producing a Group III nitride semiconductor light-emitting device according to claim 2, wherein in formation of the well layer, an Indium-containing layer is formed.

### Claim 5 (depends on 1)

The method for producing a Group III nitride semiconductor light-emitting device according to claim 1, wherein in formation of the capping layer, a decomposition and diffusion velocity of the capping layer is adjusted to fall within a range of 0.010 Å/sec. to 0.025 Å/sec.

### Claim 6 (depends on 2)

The method for producing a Group III nitride semiconductor light-emitting device according to claim 2, wherein in formation of the capping layer, a decomposition and diffusion velocity of the capping layer is adjusted to fall within a range of 0.010 Å/sec. to 0.025 Å/sec.

### Claim 7 (depends on 3)

The method for producing a Group III nitride semiconductor light-emitting device according to claim 3, wherein in formation of the capping layer, a decomposition and diffusion velocity of the capping layer is adjusted to fall within a range of 0.010 Å/sec. to 0.025 Å/sec.

### Claim 8 (depends on 4)

The method for producing a Group III nitride semiconductor light-emitting device according to claim 4, wherein in formation of the capping layer, a decomposition and diffusion velocity of the capping layer is adjusted to fall within a range of 0.010 Å/sec. to 0.025 Å/sec.

### Claim 9 (depends on 1)

The method for producing a Group III nitride semiconductor light-emitting device according to claim 1, wherein in formation of the light-emitting layer, at least 2 Å or more thickness of the capping layer is remained, and the barrier layer is formed on the remaining capping layer.

### Claim 10 (depends on 2)

The method for producing a Group III nitride semiconductor light-emitting device according to claim 2, wherein in formation of the light-emitting layer, at least 2 Å or more thickness of the capping layer is remained, and the barrier layer is formed on the remaining capping layer.

### Claim 11 (depends on 3)

The method for producing a Group III nitride semiconductor light-emitting device according to claim 3, wherein in formation of the light-emitting layer, at least 2 Å or more thickness of the capping layer is remained, and the barrier layer is formed on the remaining capping layer.

### Claim 12 (depends on 5)

The method for producing a Group III nitride semiconductor light-emitting device according to claim 5, wherein in formation of the light-emitting layer, at least 2 Å or more thickness of the capping layer is remained, and the barrier layer is formed on the remaining capping layer.

### Claim 13 (depends on 1)

The method for producing a Group III nitride semiconductor light-emitting device according to claim 1, wherein in formation of the light-emitting layer, a total thickness of the light-emitting layer is adjusted to fall within a range of 500 nm to 700 nm.

### Claim 14 (depends on 2)

The method for producing a Group III nitride semiconductor light-emitting device according to claim 2, wherein in formation of the light-emitting layer, a total thickness of the light-emitting layer is adjusted to fall within a range of 500 nm to 700 nm.

### Claim 15 (depends on 3)

The method for producing a Group III nitride semiconductor light-emitting device according to claim 3, wherein in formation of the light-emitting layer, a total thickness of the light-emitting layer is adjusted to fall within a range of 500 nm to 700 nm.

### Claim 16 (depends on 5)

The method for producing a Group III nitride semiconductor light-emitting device according to claim 5, wherein in formation of the light-emitting layer, a total thickness of the light-emitting layer is adjusted to fall within a range of 500 nm to 700 nm.

### Claim 17 (depends on 1)

The method for producing a Group III nitride semiconductor light-emitting device according to claim 1, wherein the barrier layer comprises AlGaN and the capping layer comprises GaN.

### Claim 18 (depends on 2)

The method for producing a Group III nitride semiconductor light-emitting device according to claim 2, wherein the barrier layer comprises AlGaN and the capping layer comprises GaN.

### Claim 19 (depends on 3)

The method for producing a Group III nitride semiconductor light-emitting device according to claim 3, wherein the barrier layer comprises AlGaN and the capping layer comprises GaN.

### Claim 20 (depends on 7)

The method for producing a Group III nitride semiconductor light-emitting device according to claim 7, wherein the barrier layer comprises AlGaN and the capping layer comprises GaN.