# US 2014/0154827 A1 · Photoresist Employing Photodimerization Chemistry and Method for Manufacturing Organic Light Emitting Diode Display Using the Same

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- Number: US 2014/0154827 A1
- Document ID: US20140154827A1
- Status: Published application
- Kind: A1
- Application number: 13/903,657
- Filed: 2013-05-28
- Published: 2014-06-05
- Earliest claimed: 2012-11-30
- Assignees: Inha-Industry Partnership Institute; LG Display Co., Ltd.
- Applicants: INHA Industry Partnership Institute; LG Display Co., Ltd.
- Inventors: Jinkyun LEE; Youngmi KIM; Jonggeun YOON; Joonyoung HEO; Euidoo DO; Yeonkyeong LEE; Soohyun KIM
- Web page: https://patentgrep.com/patent/US20140154827A1

## CPC

- G03F 7/0046: {with perfluoro compounds, e.g. for dry lithography (G03F7/0048 takes precedence)}
- C08F 20/10: Esters
- C08F 20/24: containing perhaloalkyl radicals
- G03F 7/038: Macromolecular compounds which are rendered insoluble or differentially wettable (G03F7/075 takes precedence; macromolecular azides G03F7/012; macromolecular diazonium compounds G03F7/021)
- G03F 7/0384: {with ethylenic or acetylenic bands in the main chain of the photopolymer}
- H10K 59/173: comprising banks or shadow masks
- H10K 71/233: {by photolithographic etching}
- H10K 71/441: {in the presence of solvent vapors, e.g. solvent vapour annealing}
- H10K 85/151: {Copolymers}
- G03F: PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR; (phototypographic composing devices B41B; photosensitive materials or processes for photographic purposes G03C; electrophotography, sensitive layers or processes therefor G03G)
- C08F: MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES

## Abstract

A highly fluorinated photoresist employing a photodimerization chemistry and a method for manufacturing an organic light emitting diode display using the same. The photoresist includes a copolymer that is made from two different monomers. When the copolymer is used as a photoresist, the photoresist has the characteristic that it becomes insoluble when exposed to an ultraviolet light having a wavelength of 365 nm.

## Claims

### Claim 1

A copolymer of a photoresist formed by the process comprising:
providing a first monomer represented by formula (1) and a second monomer represented by formula (2)
and
forming the copolymer from the first monomer and the second monomer, where x:y is a ratio of the first monomer to the second monomer and x:y is selected from the range of x:y=1:0.1 to x:y=1:1.

### Claim 2 (depends on 1)

The copolymer according to claim 1 wherein x:y is selected from the range of x:y=1:0.19 to x:y=1:0.77.

### Claim 3 (depends on 1)

The copolymer according to claim 1 wherein x:y is 1:0.19.

### Claim 4 (depends on 1)

The copolymer according to claim 1 wherein x:y is 1:0.25.

### Claim 5 (depends on 1)

The copolymer according to claim 1 wherein x:y is 1:0.38.

### Claim 6 (depends on 1)

The copolymer according to claim 1 wherein x:y is 1:0.58.

### Claim 7 (depends on 1)

The copolymer according to claim 1 wherein x:y is 1:0.77.

### Claim 8

A method for manufacturing an organic light emitting diode display comprising:
forming an electrode on a substrate;
depositing an organic light emitting layer on the electrode;
depositing a photoresist on the organic light emitting layer, the photoresist including a copolymer formed by the process comprising:
providing a first monomer represented by formula (1) and a second monomer represented by formula (2)
and
forming the copolymer from the first monomer and the second monomer, where x:y is a ratio of the first monomer to the second monomer and x:y is selected from the range of x:y=1:0.1 to x:y=1:1;
patterning the photoresist into a patterned photoresist by exposing the photoresist to ultraviolet light using a mask;
patterning the organic light emitting layer into a patterned organic light emitting layer using the patterned photoresist; and
stripping the patterned photoresist.

### Claim 9 (depends on 8)

The method according to claim 8, wherein the ultraviolet light has a wavelength of 365 nm.

### Claim 10 (depends on 8)

The method according to claim 8, wherein the photoresist is patterned using a fluorinated solvent.

### Claim 11 (depends on 8)

The method according to claim 8, wherein x:y is selected from the range of x:y=1:0.19 to x:y=1:0.77.

### Claim 12

A method for manufacturing an organic light emitting diode display comprising:
forming an electrode on a substrate;
depositing a photoresist on the electrode, the photoresist including a copolymer formed by the process comprising:
providing a first monomer represented by formula (1) and a second monomer represented by formula (2)
and
forming the copolymer from the first monomer and the second monomer, where x:y is a ratio of the first monomer to the second monomer and x:y is selected from the range of x:y=1:0.1 to x:y=1:1;patterning the photoresist into a patterned photoresist by exposing the photoresist to ultraviolet light using a mask;
depositing an organic light emitting layer on the patterned photoresist and the electrode; and
removing the patterned photoresist and portions of the organic light emitting layer on the patterned photoresist.

### Claim 13 (depends on 12)

The method according to claim 12, wherein the ultraviolet light has a wavelength of 365 nm.

### Claim 14 (depends on 12)

The method according to claim 12, wherein the photoresist is patterned using a fluorinated solvent.

### Claim 15 (depends on 12)

The method according to claim 12, wherein x:y is selected from the range of x:y=1:0.19 to x:y=1:0.77.