# US 2014/0154822 A1 · Method of manufacturing frequency tunable terahertz transceiver

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- Number: US 2014/0154822 A1
- Document ID: US20140154822A1
- Status: Published application
- Kind: A1
- Application number: 14/176,838
- Filed: 2014-02-10
- Published: 2014-06-05
- Earliest claimed: 2011-01-10
- Assignees: Electronics and Telecommunications Research Institute
- Applicants: Electronics and Telecommunications Research Institute
- Inventors: Kyung Hyun PARK
- Web page: https://patentgrep.com/patent/US20140154822A1

## CPC

- H01S 5/1092: {Multi-wavelength lasing}
- G02F 1/3534: {Three-wave interaction, e.g. sum-difference frequency generation (G02F1/3532 takes precedence)}
- H01S 5/02461: {Structure or details of the laser chip to manipulate the heat flow, e.g. passive layers in the chip with a low heat conductivity}
- H01S 5/06258: {with DFB-structure}
- H01S 5/12: the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers (comprising a photonic bandgap structure H01S5/11; surface-emitting lasers H01S5/18)
- H01S 5/4031: {Edge-emitting structures}
- G02F 2203/13: involving THZ radiation
- H01S 5/0092: {for nonlinear frequency conversion, e.g. second harmonic generation [SHG] or sum- or difference-frequency generation outside the laser cavity}
- H01S 5/026: Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers (stabilisation of output H01S5/06)
- H01S 5/0612: {controlled by temperature}
- H01S 5/1096: {in a single cavity}
- H01S 5/1215: {Multiplicity of periods}
- H01S 5/4087: {emitting more than one wavelength}
- H01S: DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- G02F: OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS

## Abstract

A method of manufacturing a frequency tunable terahertz transceiver including two separate distributed feedback lasers manufactured in one substrate, includes forming a lower clad layer on the substrate, forming an active layer on the lower clad layer, forming an upper clad layer on the active layer. And interposing first and second diffraction grating layers between the upper clad layers. A diffraction grating is manufactured by etching the first and second diffraction grating layers. The active layer is integrated into a passive waveguide. An electrode is formed on the upper clad layer.

## Claims

### Claim 1

A method of manufacturing a frequency tunable terahertz transceiver including two separate distributed feedback lasers that are manufactured in one substrate, the method comprising:
forming a lower clad layer on the substrate,
forming an active layer on the lower clad layer, forming an upper clad layer on the active layer, and interposing first and second diffraction grating layers between the upper clad layer;
manufacturing a diffraction grating by etching the first and second diffraction grating layers;
integrating the active layer into a passive waveguide; and
forming an electrode on the upper clad layer.

### Claim 2 (depends on 1)

The method of claim 1, further comprising:
forming a first separate confinement hetero layer having a smaller band gap wavelength than the active layer between the active layer and the upper clad layer; and
forming a second separate confinement hetero layer having a smaller band gap wavelength than the active layer between the active layer and the lower clad layer.

### Claim 3 (depends on 1)

The method of claim 1, further comprising, after the manufacturing of the diffraction grating through a holography and an electron beam lithography, performing a planarization process by re-growing the same material as the upper clad layer on the diffraction grating.

### Claim 4 (depends on 3)

The method of claim 3, further comprising, after the integrating of the passive waveguide, growing a p-type semiconductor layer on the upper clad layer.

### Claim 5 (depends on 4)

The method of claim 4, wherein the forming of the electrode comprises:
forming a lower electrode on the p-type semiconductor layer;
forming an insulation layer on the lower electrode; and
manufacturing a microheater on the insulation layer through a lithography technique.