# US 2014/0154631 A1 · Method of removing negative acting photoresists

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- Number: US 2014/0154631 A1
- Document ID: US20140154631A1
- Status: Published application
- Kind: A1
- Application number: 13/898,802
- Filed: 2013-05-21
- Published: 2014-06-05
- Earliest claimed: 2012-05-24
- Assignees: Rohm and Haas Electronic Materials LLC
- Applicants: Rohm and Haas Electronic Materials LLC
- Inventors: Paul J. CICCOLO; Brian D. AMOS; Stephen McCAMMON
- Web page: https://patentgrep.com/patent/US20140154631A1

## CPC

- G03F 7/425: {containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen}
- G03F: PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR; (phototypographic composing devices B41B; photosensitive materials or processes for photographic purposes G03C; electrophotography, sensitive layers or processes therefor G03G)

## Abstract

Polymerized negative acting photoresists are removed from substrates at relatively low temperatures and fast stripping times using aqueous based alkaline solutions.

## Claims

### Claim 1

A method comprising:
a) providing a substrate comprising polymerized negative acting photoresist; and
b) contacting the substrate comprising the polymerized negative acting photoresist with an aqueous alkaline solution comprising ammonium hydroxide to remove the polymerized negative acting photoresist from the substrate.

### Claim 2 (depends on 1)

The method of claim 1, wherein the ammonium hydroxide concentration is 0.1 g/L to 15 g/L.

### Claim 3 (depends on 1)

The method of claim 1, wherein the polymerized negative acting photoresist is removed from the substrate at temperatures of 15° C. or higher.

### Claim 4 (depends on 3)

The method of claim 3, wherein the polymerized negative acting photoresist is removed from the substrate at temperatures of 30° C. to 50° C.

### Claim 5 (depends on 1)

The method of claim 1, wherein the alkaline solution further comprises one or more alkali metal hydroxides.

### Claim 6 (depends on 1)

The method of claim 1, wherein the alkaline solution further comprises one or more organic alkaline compounds.

### Claim 7 (depends on 1)

The method of claim 1, wherein the alkaline solution further comprises one or more anticorrosion agents.

### Claim 8 (depends on 7)

The method of claim 7, wherein the one or more anticorrosion agents are chosen from aromatic hydroxyl compounds and triazole compounds.

### Claim 9 (depends on 1)

The method of claim 1, wherein the polymerized negative acting photoresist has a thickness of 10 μm or greater.

### Claim 10 (depends on 1)

The method of claim 1, wherein the substrate is a printed circuit board.