# US 2014/0154630 A1 · Asymmetric templates for forming non-periodic patterns using directes self-assembly materials > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2014/0154630 A1 - Document ID: US20140154630A1 - Status: Published application - Kind: A1 - Application number: 13/693,627 - Filed: 2012-12-04 - Published: 2014-06-05 - Earliest claimed: 2012-12-04 - Assignees: Globalfoundries Inc. - Applicants: Globalfoundries Inc. - Inventors: Gerard M. Schmid; Richad A. Farrell; Ji Xu; Jason R. Cantone; Moshe E. Preil - Web page: https://patentgrep.com/patent/US20140154630A1 ## CPC - G03F 7/0002: {Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping} - G03F: PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR; (phototypographic composing devices B41B; photosensitive materials or processes for photographic purposes G03C; electrophotography, sensitive layers or processes therefor G03G) ## Abstract A method includes forming a template having a plurality of elements above a process layer, wherein portions of the process layer are exposed between adjacent elements of the template. A directed self-assembly layer is formed over the exposed portions. The directed self-assembly layer has alternating etchable components and etch-resistant components. The etchable components of the directed self-assembly layer are removed. The process layer is patterned using the template and the etch-resistant components of the directed self-assembly layer. Non-periodic elements are defined in the process later by the template and periodic elements are defined in the process layer by the etch-resistant components of the directed self-assembly layer. ## Claims ### Claim 1 A method, comprising: forming a template having a plurality of elements above a process layer, wherein portions of the process layer are exposed between adjacent elements of the template; forming a directed self-assembly layer over the exposed portions, the directed self-assembly layer having alternating etchable components and etch-resistant components; removing the etchable components of the directed self-assembly layer; and patterning the process layer using the template and the etch-resistant components of the directed self-assembly layer, wherein non-periodic elements are defined in the process later by the template and periodic elements are defined in the process layer by the etch-resistant components of the directed self-assembly layer. ### Claim 2 (depends on 1) The method of claim 1, further comprising selectively removing at least one element of the template prior to the patterning of the process layer. ### Claim 3 (depends on 2) The method of claim 2, wherein selectively removing the at least one element of the template further comprises: exposing the at least one element to a radiation source; and removing the at least one element. ### Claim 4 (depends on 1) The method of claim 1, wherein forming the template further comprises: forming a photoresist layer over the process layer; and patterning the photoresist layer to define the template. ### Claim 5 (depends on 4) The method of claim 4, further comprising performing a resist trim etch on the template. ### Claim 6 (depends on 4) The method of claim 4, further comprising performing a chemical shrink on the template. ### Claim 7 (depends on 4) The method of claim 4, further comprising performing a surface treatment of the template to affect whether the etchable components or the etch resistant components wet the template. ### Claim 8 (depends on 1) The method of claim 1, wherein portions of the directed self-assembly layer adjacent the elements of the template comprise etchable components. ### Claim 9 (depends on 1) The method of claim 1, wherein portions of the directed self-assembly layer adjacent the elements of the template comprise etch-resistant components. ### Claim 10 (depends on 1) The method of claim 1, wherein forming the template, forming the directed self-assembly layer, removing the etchable components, and patterning the process layer comprises forming the template, forming the directed self-assembly layer, removing the etchable components, and patterning the process layer multiple stages, wherein non-periodic elements are defined in the process later by overlapping portions of the multiple stages of the template and periodic elements are defined in the process layer by the etch-resistant components of the multiple stages of the directed self-assembly layer. ### Claim 11 (depends on 1) The method of claim 1, wherein forming the template comprises forming a first portion of the template, forming the directed self-assembly layer comprises forming a first portion of the directed self-assembly layer over a first portion of the exposed portions, removing the etchable components comprises removing the etchable components of the first portion of the directed self-assembly layer, patterning the process layer comprises patterning the process layer using the first portion of the template and the etch-resistant components of the first portion of the directed self-assembly layer, and the method further comprises: forming a second portion of the template having a plurality of elements above the process layer, wherein portions of the process layer are exposed between adjacent elements of the second portion of the template; forming a second portion of the directed self-assembly layer over the exposed portions between adjacent elements of the second portion of the template; removing the etchable components of the second portion of the directed self-assembly layer; and patterning the process layer using the second portion of the template and the etch-resistant components of the second portion of the directed self-assembly layer, wherein non-periodic elements are defined in the process later by overlapping portions of the first and second portions of the template and periodic elements are defined in the process layer by the etch-resistant components of the first and second portions of the directed self-assembly layer. ### Claim 12 (depends on 1) The method of claim 1, wherein at least two of the elements of the template have different sizes. ### Claim 13 The method of 1, wherein a material of the directed self-assembly layer comprises at least one of a di-block copolymer, a tri-block copolymer, a ring copolymer, a star copolymer, a blend of homopolymers, a blend of copolymers, or a combination thereof. ### Claim 14 A method, comprising: forming a first template having a first plurality of elements above a process layer, wherein portions of the process layer are exposed between adjacent elements of the first template; forming a first directed self-assembly layer over the exposed portions, the first directed self-assembly layer having alternating etchable components and etch-resistant components; removing the etchable components of the first directed self-assembly layer; patterning the process layer using the first template and the etch-resistant components of the first directed self-assembly layer, wherein a first plurality of periodic elements are defined in the process layer by the etch-resistant components of the first directed self-assembly layer; forming a second template having a second plurality of elements above the process layer, wherein portions of the process layer are exposed between adjacent elements of the second template; forming a second directed self-assembly layer over the exposed portions, the second directed self-assembly layer having alternating etchable components and etch-resistant components; removing the etchable components of the second directed self-assembly layer; and patterning the process layer using the second template and the etch-resistant components of the second directed self-assembly layer, wherein a second plurality of periodic elements are defined in the process layer by the etch-resistant components of the second directed self-assembly layer and non-periodic elements are defined in the process later in regions covered by both the first and second templates during the patterning of the process layer. ### Claim 15 (depends on 14) The method of claim 14, wherein the first and second templates comprise photoresist. ### Claim 16 (depends on 14) The method of claim 14, wherein portions of the first directed self-assembly layer adjacent the elements of the first template comprise etchable components. ### Claim 17 (depends on 14) The method of claim 14, wherein portions of the first directed self-assembly layer adjacent the elements of the first template comprise etch-resistant components. ### Claim 18 (depends on 16) The method of claim 16, wherein portions of the second directed self-assembly layer adjacent the elements of the second template comprise etchable components. ### Claim 19 (depends on 16) The method of claim 16, wherein portions of the second directed self-assembly layer adjacent the elements of the second template comprise etch-resistant components. ### Claim 20 The method of 14, wherein a material of the directed self-assembly layer comprises at least one of a di-block copolymer, a tri-block copolymer, a ring copolymer, a star copolymer, a blend of homopolymers, a blend of copolymers, or a combination thereof.