# US 2014/0154528 A1 · Low Resistance Area Magnetic Stack > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2014/0154528 A1 - Document ID: US20140154528A1 - Status: Published application - Kind: A1 - Application number: 13/690,532 - Filed: 2012-11-30 - Published: 2014-06-05 - Earliest claimed: 2012-11-30 - Assignees: Seagate Technology LLC - Applicants: Seagate Technology LLC - Inventors: Vijay Karthik Sankar; Mark William Covington - Web page: https://patentgrep.com/patent/US20140154528A1 ## CPC - G11B 5/313: {Disposition of layers} - G01R 33/00: Arrangements or instruments for measuring magnetic variables - G01R 33/093: {using multilayer structures, e.g. giant magnetoresistance sensors (thin magnetic films H01F10/00)} - G11B 5/3909: {Arrangements using a magnetic tunnel junction} - G11C 11/16: using elements in which the storage effect is based on magnetic spin effect - G11C 11/161: {details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell} - H01F 10/32: Spin-exchange-coupled multilayers, e.g. nanostructured superlattices {(applying spin-exchange-coupled multilayers to substrates H01F41/302)} - H01F 41/307: {insulating or semiconductive spacer} - H10N 50/01: Manufacture or treatment - H10N 50/10: Magnetoresistive devices - H01F 10/3254: {the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]} - Y10T 428/1114: having tunnel junction effect - Y10T 428/1143: with defined structural feature - G11B: INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER (recording measured values in a way that does not require playback through a transducer G01D9/00; recording or playback apparatus using mechanically marked tape, e.g. punched paper tape, or using unit records, e.g. punched or magnetically marked cards G06K; transferring data from one type of record carrier to another G06K1/18; circuits for coupling output of reproducer to radio receiver H04B1/20; gramophone pick-ups or like acoustic electromechanical transducers or circuits therefor H04R) - G01R: MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES (indicating correct tuning of resonant circuits H03J3/12) - G11C: STATIC STORES (semiconductor memory devices H10B) - H01F: MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES - H10N: ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR - Y10T: TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION ## Abstract A magnetic element may generally be configured at least with a magnetic stack having a multilayer barrier structure disposed between first and second ferromagnetic layers. The multilayer barrier structure can have a binary compound layer disposed between first and second alloy layers with the binary compound having a metal element and a second element where at least one alloy layer has the metal element and a third element dissimilar from the second element. ## Claims ### Claim 1 An apparatus comprising a magnetic stack with a multilayer barrier structure disposed between first and second ferromagnetic layers, the multilayer barrier structure having a binary compound layer disposed between first and second alloy layers, the binary compound comprising a metal element and a second element, at least one alloy layer comprising the metal element and a third element dissimilar from the second element. ### Claim 2 (depends on 1) The apparatus of claim 1, wherein the metal element comprises Magnesium. ### Claim 3 (depends on 1) The apparatus of claim 1, wherein the second element comprises Oxygen. ### Claim 4 (depends on 1) The apparatus of claim 1, wherein the second element comprises Barium. ### Claim 5 (depends on 1) The apparatus of claim 1, wherein the second element comprises Lithium. ### Claim 6 (depends on 1) The apparatus of claim 1, wherein the second element comprises Strontium. ### Claim 7 (depends on 1) The apparatus of claim 1, wherein the magnetic stack comprises a trilayer lamination having first and second magnetically free layers without a fixed reference magnetization. ### Claim 8 (depends on 1) The apparatus of claim 1, wherein the magnetic stack comprises an abutted junction lamination having a fixed magnetization reference structure opposite the multilayer barrier structure from a magnetically free layer. ### Claim 9 (depends on 1) The apparatus of claim 1, wherein each alloy layer is disposed between one of the first and second ferromagnetic layers and the binary compound layer. ### Claim 10 (depends on 1) The apparatus of claim 1, wherein the first and second alloy layers have the same material composition. ### Claim 11 (depends on 1) The apparatus of claim 1, wherein the binary compound layer and at least one alloy layer each have a common thickness. ### Claim 12 (depends on 1) The apparatus of claim 1, wherein the binary compound layer and at least one alloy layer each have dissimilar thicknesses. ### Claim 13 (depends on 9) The apparatus of claim 9, wherein the first and second alloy layers have dissimilar material compositions. ### Claim 14 A magnetic element comprising: a magnetic stack with a multilayer barrier structure disposed between first and second ferromagnetic layers and between first and second pure metal layers, the multilayer barrier structure having a binary compound layer disposed between first and second alloy layers, the binary compound comprising a metal element and a second element, each alloy layer comprising the metal element and a third element dissimilar from the second element. ### Claim 15 (depends on 14) The magnetic element of claim 14, wherein each pure metal layer comprises the metal element of the binary compound. ### Claim 16 (depends on 14) The magnetic element of claim 14, wherein the binary compound layer comprises MgO and each alloy layer comprises MgX where X is chosen from the group of: Ba, Sr, and Li. ### Claim 17 (depends on 14) The magnetic element of claim 14, wherein the binary compound layer comprises MgX where X is chosen from the group of: Ba, Sr, and Li, each alloy layer is MgO, and each pure metal layer is Mg. ### Claim 18 A method comprising: constructing a lower electrode portion of a magnetic stack with at least one ferromagnetic layer; forming a multilayer barrier structure atop the lower electrode portion, the multilayer barrier structure having a binary compound layer disposed between first and second alloy layers, the binary compound comprising a metal element and a second element, at least one alloy layer comprising the metal element and a third element dissimilar from the second element; and depositing a top electrode portion a magnet stack with at least one ferromagnetic layer atop the multilayer barrier structure. ### Claim 19 (depends on 18) The method of claim 18, further comprising cooling the magnetic stack to a cryogenic temperature prior to the depositing step. ### Claim 20 (depends on 18) The method of claim 18, further comprising heating the magnetic stack to an elevated temperature prior to the depositing step.