# US 2014/0154510 A1 · Film structure and method for producing same

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- Number: US 2014/0154510 A1
- Document ID: US20140154510A1
- Status: Published application
- Kind: A1
- Application number: 14/131,197
- Filed: 2012-07-04
- Published: 2014-06-05
- Earliest claimed: 2011-07-11
- Assignees: Panasonic Corporation
- Inventors: Akihiro Odagawa; Akio Matsushita; Nozomu Matsukawa
- Web page: https://patentgrep.com/patent/US20140154510A1

## CPC

- H10D 62/882: {Graphene}
- B82Y 10/00: Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
- B82Y 40/00: Manufacture or treatment of nanostructures
- C23C 14/06: characterised by the coating material ({C23C14/0021} , C23C14/04 take precedence)
- C23C 14/0694: {Halides}
- C23C 14/081: {of aluminium, magnesium or beryllium}
- C23C 14/3407: {Cathode assembly for sputtering apparatus, e.g. Target}
- C23C 14/352: {using more than one target (C23C14/56 takes precedence)}
- H10N 50/10: Magnetoresistive devices
- H10P 14/6329: {using physical ablation of a target, e.g. physical vapour deposition or pulsed laser deposition}
- H10P 14/6939: {characterised by the metal}
- Y10T 428/30: Self-sustaining carbon mass or layer with impregnant or other layer
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- B82Y: SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04)
- H10N: ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- Y10T: TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION

## Abstract

A film structure (carbon material-insulating film structure) of the present invention includes a carbon material and an insulating film disposed on the carbon material and composed of fluorine-added magnesium oxide. The amount of added fluorine in the magnesium oxide is 0.0049 atomic percent or more and 0.1508 atomic percent or less. This film structure facilitates the realization of an electronic device, such as a spin device, which uses a carbon material such as graphene. This film structure is formed, for example, by sputtering using a target containing magnesium oxide and magnesium fluoride.

## Claims

### Claim 1

A film structure comprising:
a carbon material; and
an insulating film disposed on the carbon material and composed of fluorine-added magnesium oxide, wherein
the amount of added fluorine in the magnesium oxide is 0.0049 atomic percent or more and 0.1508 atomic percent or less.

### Claim 2

A method for producing a film structure including a carbon material and an insulating film disposed on the carbon material, the method comprising
forming an insulating film composed of fluorine-added magnesium oxide on the carbon material by sputtering using a target containing magnesium oxide and magnesium fluoride, the amount of added fluorine in the insulating film being 0.0049 atomic percent or more and 0.1508 atomic percent or less.

### Claim 3 (depends on 2)

The method for producing a film structure according to claim 2, wherein the insulating film is formed on the carbon material by co-sputtering using the target containing magnesium oxide and magnesium fluoride and an additional target composed of magnesium oxide.