# US 2014/0154423 A1 · Apparatus and method for deposition

> Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt

- Number: US 2014/0154423 A1
- Document ID: US20140154423A1
- Status: Published application
- Kind: A1
- Application number: 14/128,902
- Filed: 2012-06-21
- Published: 2014-06-05
- Earliest claimed: 2011-06-21
- Assignees: LG Innotek Co., Ltd.
- Inventors: Yeong Deuk Jo; Seok Min Kang; Moo Seong Kim
- Web page: https://patentgrep.com/patent/US20140154423A1

## CPC

- C23C 16/50: using electric discharges {(generation and control of plasma in discharge tubes for surface treatment H01J37/32, H01J37/34)}
- C23C 16/452: by activating reactive gas streams before {their} introduction into the reaction chamber, e.g. by {ionisation} or addition of reactive species
- H10P 14/24: using chemical vapour deposition [CVD]
- H10P 14/2904: {Silicon carbide}
- H10P 14/3408: {Silicon carbide}
- C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04)
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

A deposition apparatus according to the embodiment includes a gas supply part for supplying a first gas; an ionization part connected to the gas supply part to supply a second gas, which is obtained by ionizing the first gas; and a reaction part into which the second gas is introduced to create a reaction. A deposition method according to the embodiment includes the steps of preparing a first gas; supplying a second gas, which is obtained by ionizing the first gas; and reacting the second gas with a substrate.

## Claims

### Claim 1

A deposition apparatus comprising:
a gas supply part for supplying a first gas;
an ionization part connected to the gas supply part to supply a second gas, which is obtained by ionizing the first gas; and
a reaction part into which the second gas is introduced to create a reaction.

### Claim 2 (depends on 1)

The deposition apparatus of claim 1, wherein the ionization part includes a polarity generation part connected to a power source to ionize the first gas by forming an electric field.

### Claim 3 (depends on 2)

The deposition apparatus of claim 2, wherein the ionization part further includes a charged particle generation part for generating charged particles.

### Claim 4 (depends on 3)

The deposition apparatus of claim 3, wherein the ionization part includes a chamber and the polarity generation part and the charged particle generation part are placed in the chamber.

### Claim 5 (depends on 4)

The deposition apparatus of claim 4, wherein the polarity generation part generates an electric field in the chamber.

### Claim 6 (depends on 1)

The deposition apparatus of claim 1, wherein the first gas include silane.

### Claim 7

A deposition method comprising:
preparing a first gas;
supplying a second gas, which is obtained by ionizing the first gas; and
reacting the second gas with a substrate.

### Claim 8 (depends on 7)

The deposition method of claim 7, wherein the supplying of the second gas comprises ionizing the first gas.

### Claim 9 (depends on 7)

The deposition method of claim 7, wherein the supplying of the second gas and the reacting of the second gas with the substrate are performed in different chambers.

### Claim 10 (depends on 7)

The deposition method of claim 7, wherein the reacting of the second gas with the substrate comprises forming a thin film on the substrate.

### Claim 11 (depends on 7)

The deposition method of claim 7, wherein the first gas includes silane, and the substrate includes silicon carbide.

### Claim 12 (depends on 10)

The deposition method of claim 10, wherein the thin film includes silicon carbide.