# US 2014/0154417 A1 · Method and apparatus capable of synthesizing high-density wires in pores and on surface of porous material > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2014/0154417 A1 - Document ID: US20140154417A1 - Status: Published application - Kind: A1 - Application number: 14/077,482 - Filed: 2013-11-12 - Published: 2014-06-05 - Earliest claimed: 2012-12-04 - Assignees: Industry-Academic Cooperation Foundation, Yonsei University - Applicants: Industry-Academic Cooperation Foundation, Yonsei University - Inventors: Doo Jin Choi; YooYoul Choi - Web page: https://patentgrep.com/patent/US20140154417A1 ## CPC - C30B 25/005: {Growth of whiskers or needles} - C23C 16/045: {Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates} - C30B 29/18: Quartz - C30B 29/60: characterised by shape - C30B: SINGLE-CRYSTAL GROWTH (by using ultra-high pressure, e.g. for the formation of diamonds, B01J3/06); UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL (zone-refining of metals or alloys C22B); PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (casting of metals, casting of other substances by the same processes or devices B22D; working of plastics B29; modifying the physical structure of metals or alloys C21D, C22F); SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (for producing semiconductor devices or parts thereof H10); APPARATUS THEREFOR - C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04) ## Abstract According to an embodiment of the present invention, provided is a method of synthesizing nanowires that includes the following steps of: disposing a covering inside a reaction furnace such that the covering is spaced apart by a predetermined gap from a substrate which is provided for synthesis of nanowires; heating the reaction furnace; and synthesizing nanowires by allowing a source gas to be deposited on the substrate while flowing through the gap between the substrate and the covering. ## Claims ### Claim 1 A method of synthesizing nanowires comprising following steps of: disposing a covering inside a reaction furnace such that the covering is spaced apart by a predetermined gap from a substrate which is provided for synthesis of nanowires; heating the reaction furnace, and synthesizing nanowires by allowing a source gas to be deposited on the substrate while flowing through the gap between the substrate and the covering. ### Claim 2 (depends on 1) The method according to claim 1, wherein the covering is spaced apart by the predetermined gap from a surface of the substrate on which nanowires are to be formed. ### Claim 3 (depends on 1) The method according to claim 1, wherein the substrate is a porous substrate. ### Claim 4 (depends on 3) The method according to claim 3, wherein the nanowires are formed not only on a surface of the porous substrate but also in pores inside the porous substrate. ### Claim 5 (depends on 1) The method according to claim 1, wherein a shape of nanowires that are formed differs depending on a size of the gap between the substrate and the covering. ### Claim 6 (depends on 5) The method according to claim 5, wherein the nanowires formed on the substrate have a clearer shape as the size of the gap decreases. ### Claim 7 (depends on 5) The method according to claim 5, wherein the gap between the substrate and the covering is preset depending on design criteria. ### Claim 8 (depends on 5) The method according to claim 5, wherein the covering is connected to a displacing means for displacing the covering and the gap between the substrate and the covering is changed by controlling a displacement of the displacing means using a control unit. ### Claim 9 An apparatus for synthesizing nanowires on a substrate, the apparatus comprising: a deposition chamber which performs a deposition process of depositing a predetermined material on a substrate placed on a mounting part, and a gas feed system which feeds a reactant gas to the deposition chamber, wherein the gas feed system comprises: a reactant source that is connected to the deposition chamber and supplies a reactant required for deposition inside the deposition chamber, and a carrier gas source that is connected to the deposition chamber and the reactant source and supplies a carrier gas carrying the reactant into the deposition chamber, wherein the deposition chamber comprises: a reaction furnace that can stay in vacuum and at high temperature and has one end connected to the carrier gas source and the reactant source and the other end connected to a vacuum pump, and a heating element that is disposed around the reaction furnace and is configured to heat the reaction furnace, wherein a substrate on which nanowires are to be synthesized and a covering are disposed inside the reaction furnace, the covering being spaced apart by a predetermined gap from the substrate, and wherein inside the reaction chamber, a gas of the reactant source is deposited on the substrate while flowing through the gap between the substrate and the covering, thereby synthesizing nanowires. ### Claim 10 (depends on 9) The apparatus according to claim 9, wherein the covering is spaced apart by the predetermined gap from a surface of the substrate on which nanowires are to be formed. ### Claim 11 (depends on 10) The apparatus according to claim 10, wherein the substrate is a porous substrate. ### Claim 12 (depends on 11) The apparatus according to claim 11, wherein the nanowires are formed not only on the surface of the porous substrate but also in pores inside the porous substrate. ### Claim 13 (depends on 9) The apparatus according to claim 9, wherein a shape of nanowires that are formed differs depending on a size of the gap between the substrate and the covering. ### Claim 14 (depends on 13) The apparatus according to claim 13, wherein the nanowires formed on the substrate have a clearer shape as the size of the gap decreases. ### Claim 15 (depends on 13) The apparatus according to claim 13, wherein the gap between the substrate and the covering is preset depending on design criteria. ### Claim 16 (depends on 13) The apparatus according to claim 13, further comprising a displacing means which is connected to the covering and displaces the covering, and a control unit which controls displacement of the displacing means, wherein the gap between the substrate and the covering is changed by controlling a displacement of the displacing means using the control unit.