# US 2014/0154414 A1 · Atomic layer deposition apparatus and method > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2014/0154414 A1 - Document ID: US20140154414A1 - Status: Published application - Kind: A1 - Application number: 13/692,972 - Filed: 2012-12-03 - Published: 2014-06-05 - Earliest claimed: 2012-12-03 - Assignees: Taiwan Semiconductor Manufacturing Company, Ltd. - Applicants: Taiwan Semiconductor Manufacturing Company, L - Inventors: Chia-Yi CHUANG; Hsing-Jui Lee; Ming-Te Chen - Web page: https://patentgrep.com/patent/US20140154414A1 ## CPC - C23C 16/45527: {characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations} - C23C 16/455: characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber - C23C 16/45544: {characterized by the apparatus} - C23C 16/45546: {specially adapted for a substrate stack in the ALD reactor} - C23C 16/45548: {having arrangements for gas injection at different locations of the reactor for each ALD half-reaction} - C23C 16/45574: {Nozzles for more than one gas} - C23C 16/45578: {Elongated nozzles, tubes with holes} - C23C 16/4583: {the substrate being supported substantially horizontally} - C23C 16/46: characterised by the method used for heating the substrate (C23C16/48, C23C16/50 take precedence) - C30B 25/14: Feed and outlet means for the gases; Modifying the flow of the reactive gases - C30B 31/16: Feed and outlet means for the gases; Modifying the flow of the gases - H01J 37/3244: {Gas supply means} - H10P 14/60: of insulating materials - H10P 14/6339: {deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD} - C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04) - C30B: SINGLE-CRYSTAL GROWTH (by using ultra-high pressure, e.g. for the formation of diamonds, B01J3/06); UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL (zone-refining of metals or alloys C22B); PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (casting of metals, casting of other substances by the same processes or devices B22D; working of plastics B29; modifying the physical structure of metals or alloys C21D, C22F); SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (for producing semiconductor devices or parts thereof H10); APPARATUS THEREFOR - H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H) - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 ## Abstract An atomic layer deposition apparatus includes a chamber including a plurality of regions; and a heating device respectively providing specific temperature ranges for the plurality of regions. ## Claims ### Claim 1 An atomic layer deposition apparatus, comprising: a chamber including a plurality of regions; and a heating device providing specific temperature ranges for the plurality of regions. ### Claim 2 (depends on 1) The atomic layer deposition apparatus according to claim 1 further comprising an injector configured in the chamber and having a plurality of holes, wherein the heating device includes a plurality of heaters, each of which corresponds to a respective one of the plurality of regions. ### Claim 3 (depends on 2) The atomic layer deposition apparatus according to claim 2 further comprising plural injectors located in the chamber, wherein each the injector has a bore having a specific geometric parameter. ### Claim 4 (depends on 3) The atomic layer deposition apparatus according to claim 3, wherein the plural injectors are configured to control a plurality of reaction cycles by the respective specific geometric parameters for respective deposition thicknesses in a wafer layer deposition process, and a batch of wafers are provided to the chamber before the wafer layer deposition process begins. ### Claim 5 (depends on 4) The atomic layer deposition apparatus according to claim 4, wherein the plurality of heaters are configured to perform a temperature tuning for the plurality of regions respectively for one of the plurality of reaction cycles in the wafer layer deposition process, and the chamber provides at least one precursor being pulsed onto the batch of wafers during the wafer layer deposition process. ### Claim 6 (depends on 5) The atomic layer deposition apparatus according to claim 5, wherein each the precursor has a thermal stability below a predefined deposition temperature, and is used during the wafer layer deposition process for a self limiting growth. ### Claim 7 (depends on 4) The atomic layer deposition apparatus according to claim 4, wherein the plurality of regions further comprises a dummy region configured to stabilize the wafer layer deposition process. ### Claim 8 An atomic layer deposition apparatus, comprising: a chamber including a plurality of regions having at least a first region and a second region, the first region configured to produce a film having a first thickness, and the second region configured to produce a film having a second thickness different from the first thickness; and an injector having a gas flow path, the gas flow path including a first hole with a first geometric parameter and a second hole with a second geometric parameter different from the first geometric parameter, the injector being configured to generate a non-uniform gaseous flow in the first region relative the second region. ### Claim 9 (depends on 8) The atomic layer deposition apparatus according to claim 8, wherein one of the first hole and the second hole corresponds to a specific one of the plurality of regions. ### Claim 10 (depends on 9) The atomic layer deposition apparatus according to claim 9 further comprising, a plurality of heaters respectively corresponding to the plurality of regions to control respective deposition thicknesses of respective atomic layers in the plurality of regions. ### Claim 11 (depends on 10) The atomic layer deposition apparatus according to claim 10, wherein the plurality of regions further comprise at least one dummy region configured to stabilize a deposition process. ### Claim 12 (depends on 8) The atomic layer deposition apparatus according to claim 8, wherein the first hole is configured to deposit the atomic layer for a first thickness, the second hole is configured to deposit the atomic layer for a second thickness, and the first thickness and the second thickness are different from each other. ### Claim 13 An atomic layer deposition process, comprising: providing a chamber having a plurality of regions; and injecting at least two depositing materials into respective ones of the plurality of regions. ### Claim 14 (depends on 13) The atomic layer deposition process according to claim 13, wherein the injecting step is a step of using at least two injectors to respectively inject the at least two depositing materials. ### Claim 15 (depends on 14) The atomic layer deposition process according to claim 14, wherein the at least two depositing materials have the same recipe. ### Claim 16 (depends on 13) The atomic layer deposition process according to claim 13, wherein the injecting step comprises a step of using an injector having at least two holes of different geometric parameters. ### Claim 17 (depends on 16) The atomic layer deposition process according to claim 16, wherein the injecting step comprises adjusting the at least two holes to change the respective deposition thicknesses of respective atomic layers in the plurality of regions. ### Claim 18 (depends on 13) The atomic layer deposition process according to claim 13 further comprising a step of selecting at least one from the plurality of regions to be at least one dummy region to stabilize the atomic layer deposition process. ### Claim 19 (depends on 13) The atomic layer deposition process according to claim 13 further comprising a step of providing a specific reaction cycle with a controllable process to cause a batch of wafers to be processed with at least two different deposition thicknesses. ### Claim 20 (depends on 13) The atomic layer deposition process according to claim 13 further comprising a step of performing a temperature tuning for the plurality of regions to control respective deposition rates therein.