# US 2014/0153613 A1 · Measuring shunt comprising protective frame > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2014/0153613 A1 - Document ID: US20140153613A1 - Status: Published application - Kind: A1 - Application number: 14/232,422 - Filed: 2012-06-27 - Published: 2014-06-05 - Earliest claimed: 2011-07-14 - Assignees: Heraeus Sensor Technology GmbH - Inventors: Karlheinz Wienand; Margit Sander - Web page: https://patentgrep.com/patent/US20140153613A1 ## CPC - G01K 7/18: the element being a linear resistance, e.g. platinum resistance thermometer (G01K7/26 takes precedence) - C23C 14/18: on other inorganic substrates - C23C 16/06: characterised by the deposition of metallic material - G01K: MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR (radiation pyrometry G01J5/00) - C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04) ## Abstract A high temperature sensor includes a substrate, at least two terminal contacts and at least one resistive structure, wherein the terminal contacts and the at least one resistive structure are disposed on a first side of the substrate, and at least one of the resistive structures is electrically contacted by the terminal contacts, wherein at least one electrode is disposed on each of the two terminal contacts next to the resistive structure on the first side of the substrate. The electrodes are electrically connected to the terminal contacts, respectively, or at least one electrode is disposed on at least one terminal contact next to the resistive structure on the first side of the substrate, wherein the electrode is designed in one piece with the resistive structure. The invention also relates to a high temperature sensor and a method for producing such a sensor. ## Claims ### Claim at position 1 -12. (canceled) ### Claim 13 A temperature sensor, in particular a high temperature sensor, comprising a substrate (16), at least two terminal contacts (2, 3, 12, 13) and at least one resistive structure (1, 11), the terminal contacts (2, 3, 12, 13) and at least one of the resistive structures (1, 11) being disposed on a first side of the substrate (16), and at least one resistive structure (1, 11) being electrically contacted by the terminal contacts (2, 3, 12, 13), wherein at least one electrode (4, 5, 14, 15) is disposed on each of the two terminal contacts (2, 3, 12, 13) next to the resistive structure (11) on the first side of the substrate (16), the electrodes being electrically connected to the respective terminal contact (2, 3, 12, 13). ### Claim 14 (depends on 13) The temperature sensor according to claim 13, wherein the electrodes (4, 5, 14, 15) are designed in one piece with the resistive structure (1, 11). ### Claim 15 A temperature sensor, in particular a high temperature sensor, comprising a substrate (16), at least two terminal contacts (2, 3, 12, 13) and at least one resistive structure (1, 11), the terminal contacts (2, 3, 12, 13) and at least one of the resistive structures (1, 11) being disposed on a first side of the substrate (16), and at least one resistive structure (1, 11) being electrically contacted by the terminal contacts (2, 3, 12, 13), wherein at least one electrode (4, 5, 14, 15) is disposed on at least one terminal contact (2, 3, 12, 13) next to the resistive structure (11) on the first side of the substrate (16), the electrode (4, 5, 14, 15) or the electrodes (4, 5, 14, 15) designed in one piece with the resistive structure (1, 11). ### Claim 16 (depends on 15) The temperature sensor according to claim 15, wherein the terminal contact (2, 3), to which the at least one electrode (4) is connected, is a cathode (2). ### Claim 17 (depends on 13) A temperature sensor according to claim 13, wherein at least one electrode (4, 5, 14, 15) frames at least one side of the resistive structure (1, 11). ### Claim 18 (depends on 17) A temperature sensor according to claim 17, wherein at least two sides of the resistive structure (1, 11) are framed by at least two electrodes (4, 5, 14, 15). ### Claim 19 (depends on 18) A temperature sensor according to claim 18, wherein two opposing sides of the resistive structure (1, 11) are framed by the at least two electrodes (4, 5, 14, 15). ### Claim 20 (depends on 13) A temperature sensor according to claim 13, wherein the substrate (16) is a metal oxide, the metal oxide being coated. ### Claim 21 (depends on 13) A temperature sensor according to claim 13, wherein the resistive structure (1, 11) is a meander-shaped linear structure, which is made of a metal. ### Claim 22 (depends on 21) A temperature sensor according to claim 21, wherein the metal is platinum. ### Claim 23 (depends on 13) A temperature sensor according to claim 13, wherein at least the resistive structure (1, 11) is covered with at least one dielectric layer (18, 19, 20) that is self-supporting. ### Claim 24 (depends on 23) A temperature sensor according to claim 23, wherein the at least one dielectric layer (18, 19, 20) is selected from the group consisting of a ceramic layer (18, 19, 20), a glass layer, or a glass ceramic layer (19). ### Claim 25 (depends on 13) A method for producing a temperature sensor according to claim 13, in which at least one resistive structure (1, 11) is applied to a first side of a substrate (16), wherein a metallic coating, is applied to the substrate (16) in such a way that the coating forms the at least one resistive structure (1, 11), at least two terminal contacts (2, 3, 12, 13) and at least one electrode (4, 5, 14, 15), so that the terminal contacts (2, 3, 12, 13) electrically contact the at least one resistive structure (1, 11) and electrically contact at least one electrode (4, 5, 14, 15) with at least one terminal contact (2, 3, 12, 13). ### Claim 26 (depends on 13) A high temperature sensor chip, comprising a temperature sensor according to claim 13. ### Claim 27 (depends on 26) The high temperature sensor chip according to claim 26, wherein the terminal contacts (2, 3, 12, 13) of the temperature sensor are contacted with wires (21, 22). ### Claim 28 (depends on 26) The high temperature sensor chip according to claim 26, wherein at least the resistive structure (1, 11) is covered directly and over the entire surface area with a ceramic intermediate layer (18) and/or a glass ceramic (19) and/or a glass layer (20).