# US 2014/0153339 A1 · Nonvolatile memory device having selectable sensing modes, memory system having the same and programming method thereof

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- Number: US 2014/0153339 A1
- Document ID: US20140153339A1
- Status: Published application
- Kind: A1
- Application number: 14/177,457
- Filed: 2014-02-11
- Published: 2014-06-05
- Earliest claimed: 2010-05-17
- Assignees: Samsung Electronics Co., Ltd.
- Applicants: Samsung Electronics Co., Ltd.
- Inventors: MINSEOK KIM; KITAE PARK
- Web page: https://patentgrep.com/patent/US20140153339A1

## CPC

- G11C 16/26: Sensing or reading circuits; Data output circuits
- G11C 11/5628: {Programming or writing circuits; Data input circuits}
- G11C 16/0483: {comprising cells having several storage transistors connected in series}
- G11C 16/06: Auxiliary circuits, e.g. for writing into memory
- G11C: STATIC STORES (semiconductor memory devices H10B)

## Abstract

A non-volatile memory device which includes a sensing mode selector configured to select a sensing mode according to environment information. A page buffer senses a data state of a memory cell in one of a plurality of sensing methods, depending upon the selected sensing mode.

## Claims

### Claim 1

A method for sensing data of a non-volatile memory device, comprising:
inputting an environment information;
selecting one of a plurality of sensing modes corresponding to the environment information; and
sensing data according to the selected sensing mode.