# US 2014/0153263 A1 · Two part flexible light emitting semiconductor device

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- Number: US 2014/0153263 A1
- Document ID: US20140153263A1
- Status: Published application
- Kind: A1
- Application number: 14/233,266
- Filed: 2012-08-08
- Published: 2014-06-05
- Earliest claimed: 2011-08-17
- Assignees: 3M Innovative Properties Company
- Inventors: Ravi Palaniswamy; Alejandro Aldrin II Agcaoili Narag; Jian Xia Gao; Justine A. Mooney
- Web page: https://patentgrep.com/patent/US20140153263A1

## CPC

- H10H 20/857: Interconnections, e.g. lead-frames, bond wires or solder balls
- H01S 5/02315: Support members, e.g. bases or carriers
- H01S 5/0233: Mounting configuration of laser chips
- H01S 5/0235: Method for mounting laser chips
- H01S 5/02469: {Passive cooling, e.g. where heat is removed by the housing as a whole or by a heat pipe without any active cooling element like a TEC}
- H10H 20/8506: {Containers}
- H10H 20/858: Means for heat extraction or cooling
- H10W 70/635: {Through-vias}
- H10W 70/65: Shapes or dispositions of interconnections
- H10W 70/685: comprising multiple insulating layers
- H10W 70/688: {Flexible insulating substrates}
- H01S 5/02345: Wire-bonding
- H10W 72/884: {Die-attach connectors and bond wires}
- H10W 90/754: {between a chip and a stacked insulating package substrate, interposer or RDL}
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H01S: DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

Provided is a light emitting semiconductor device comprising a flexible dielectric layer, a conductive layer on at least one side of the dielectric layer, at least one cavity or via in the dielectric substrate, and a light emitting semiconductor supported by the cavity or via. Also provided is a support article comprising a flexible dielectric layer, a conductive layer on at least one side and at least one cavity or via in the dielectric substrate. Further provided is a flexible light emitting semiconductor device system comprising the above-described light emitting semiconductor device attached to the above-described support article.

## Claims

### Claim 1

A light emitting semiconductor device comprising:
a flexible dielectric layer having a first major surface with a first conductive layer thereon and having a second major surface with a second conductive layer thereon, the dielectric layer having one or both of a first and second via extending through the dielectric layer and a cavity or a third via extending from the first surface to, or toward, the second surface of the dielectric layer, the first conductive layer comprising conductive features in electrical contact with one or both of the first and second vias, the cavity or third via at least partially filled with conductive material the second conductive layer comprising conductive features in electrical contact with one or both of the first and second vias; the cavity, or third via, being configured to receive a light emitting semiconductor.

### Claim 2 (depends on 1)

The light emitting semiconductor device of claim 1 wherein one or both of the first and second vias are hollow plated vias.

### Claim 3 (depends on 1)

The light emitting semiconductor device of claim 1 wherein the second conductive layer further comprises a conductive feature aligned with the third via or cavity.

### Claim 4 (depends on 1)

The light emitting semiconductor device of claim 1 wherein the conductive features of the second layer extend under at least a portion of the third via or cavity and are electrically isolated from each other.

### Claim 5

A support article comprising:
a flexible dielectric layer having a first major surface and having a second major surface with a conductive layer thereon, the dielectric layer having at least two adjacent cavities or vias extending from the first major surface toward, or to, the second major surface, the two or more cavities or vias each configured to receive one or more bottom contacts of an LES package mounted on the support article, wherein contacts received by a single cavity or via have the same, or a neutral, polarity.

### Claim 6 (depends on 5)

The support article of claim 5 wherein the conductive layer on the second major surface of the dielectric layer comprises a conductive feature disposed beneath each via.

### Claim 7 (depends on 5)

The support article of claim 5 wherein the first major surface of the dielectric layer has a conductive layer thereon.

### Claim 8 (depends on 7)

The support article of claim 7 wherein the conductive layer on the first major surface of the dielectric layer extends into the cavities or vias.

### Claim 9 (depends on 5)

The support article of claim 5 wherein the cavities or vias contain conductive material.

### Claim 10 (depends on 1, 5)

A flexible LESD system comprising:
the light emitting semiconductor device of claim 1 and the support article of claim 5 wherein the conductive features of the second conductive layer of the light emitting semiconductor device make one or both of electrical and thermal connections in the cavities or vias of the support article.

### Claim 11 (depends on 1)

A flexible LESD system comprising:
the light emitting semiconductor device of claim 1 and a support article comprising a flexible dielectric layer having a first major surface with a first conductive layer thereon and having a second major surface, the dielectric layer having at least one cavity, or via, extending from the second major surface toward, or to, the first major surface, the at least one cavity, or via, containing conductive material, the first conductive layer comprising a first conductive feature disposed atop the cavity, or via, and at least one second conductive feature disposed adjacent the first conductive feature.

### Claim 12 (depends on 11)

The flexible LESD system of claim 11 wherein a cavity, or via, containing conductive material is disposed under the at least one second conductive feature of the support article.

### Claim 13 (depends on 11)

The flexible LESD system of claim 11 wherein the second major surface of the flexible dielectric layer of the support article has a second conductive layer thereon.

### Claim 14 (depends on 4)

A flexible LESD system comprising:
the light emitting semiconductor device of claim 4;
a support article comprising a flexible dielectric layer having a first major surface with a first conductive layer thereon and having a second major surface with a second conductive layer thereon, the dielectric layer having at least one cavity or via extending from the first major surface toward, or to, the second major surface and containing conductive material that form at least two electrically isolated conductive features.

### Claim 15 (depends on 14)

The flexible LESD system of claim 14 wherein one or both conductive features of the light emitting semiconductor device comprises a protrusion and wherein at least one of the electrically isolated features comprises an indentation configured to receive the protrusion of the light emitting semiconductor device.