# US 2014/0153156 A1 · Multilayered ceramic capacitor and board for mounting the same

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- Number: US 2014/0153156 A1
- Document ID: US20140153156A1
- Status: Published application
- Kind: A1
- Application number: 13/764,106
- Filed: 2013-02-11
- Published: 2014-06-05
- Earliest claimed: 2012-12-04
- Assignees: Samsung Electro-Mechanics Co., Ltd.
- Applicants: Samsung Electro-Mechanics Co., Ltd.
- Inventors: Min Cheol PARK; Sang Soo PARK; Young Ghyu AHN; Byoung Hwa LEE
- Web page: https://patentgrep.com/patent/US20140153156A1

## CPC

- H01G 4/002: Details
- H01G 4/012: Form of non-self-supporting electrodes
- H01G 4/12: Ceramic dielectrics {(H01G4/085 takes precedence)}
- H01G 4/30: Stacked capacitors (H01G4/33 takes precedence)
- H01G: CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE (selection of specified materials as dielectric H01B3/00; capacitors having potential barriers H10D1/62, H10K10/10)

## Abstract

A multilayered ceramic capacitor includes a ceramic body in which a plurality of dielectric layers having an average thickness of 0.2 to 2.0 μm are stacked; an active layer including a plurality of first and second internal electrodes alternately exposed to both end surfaces of the ceramic body, having the dielectric layer interposed therebetween, to form capacitance; an upper cover layer formed above the active layer; a lower cover layer formed below the active layer and thicker than the upper cover layer; and first and second external electrodes covering both end surfaces of the ceramic body, wherein the dielectric layer is configured of dielectric grains, and when an average thickness of the dielectric layer is defined as td, an average thickness of the first and second internal electrodes is defined as te, and an average grain size of the dielectric grains is defined as Da, Da≦td/3 and 0.2 μm<te<(td)1/2 are satisfied.

## Claims

### Claim 1

A multilayered ceramic capacitor comprising:
a ceramic body in which a plurality of dielectric layers having an average thickness of 0.2 to 2.0 μm are stacked;
an active layer including a plurality of first and second internal electrodes formed to be alternately exposed to both end surfaces of the ceramic body, having the dielectric layer interposed therebetween, to form capacitance;
an upper cover layer formed above the active layer;
a lower cover layer formed below the active layer and being thicker than the upper cover layer; and
first and second external electrodes formed to cover the both end surfaces of the ceramic body,
wherein the dielectric layer is configured of dielectric grains, and
when an average thickness of the dielectric layer is defined as td (μm), an average thickness of the first and second internal electrodes is defined as to (μm), and an average grain size of the dielectric grains is defined as Da (μm), Da≦td/3 and 0.2 μm<te<(td)1/2 are satisfied.

### Claim 2 (depends on 1)

The multilayered ceramic capacitor of claim 1, wherein when half of a total thickness of the ceramic body is defined as A, a thickness of the lower cover layer is defined as B, half of a total thickness of the active layer is defined as C, and a thickness of the upper cover layer is defined as D, a ratio ((B+C)/A) of deviation between a center of the active layer and a center of the ceramic body is in a range of 1.063 to 1.745 (1.063≦(B+C)/A≦1.745).

### Claim 3 (depends on 1)

The multilayered ceramic capacitor of claim 1, wherein when a thickness of the lower cover layer is defined as B and a thickness of the upper cover layer is defined as D, a ratio (D/B) of the thickness D of the upper cover layer to the thickness B of the lower cover layer is in a range of 0.021 to 0.422 (0.021≦D/B≦0.422).

### Claim 4 (depends on 1)

The multilayered ceramic capacitor of claim 1, wherein when half of a total thickness of the ceramic body is defined as A and a thickness of the lower cover layer is defined as B, a ratio (B/A) of the thickness B of the lower cover layer to the half A of the thickness of the ceramic body is in a range of 0.329 to 1.522 (0.329≦B/A≦1.522).

### Claim 5 (depends on 1)

The multilayered ceramic capacitor of claim 1, wherein when a thickness of the lower cover layer is defined as B and half of a total thickness of the active layer is defined as C, a ratio (C/B) of the half C of the thickness of the active layer to the thickness B of the lower cover layer is in a range of 0.146 to 2.458 (0.146≦C/B≦2.458).

### Claim 6 (depends on 1)

The multilayered ceramic capacitor of claim 1, wherein points of inflection (PI) formed in both end surfaces of the ceramic body are formed in positions lower than a center of the ceramic body in a thickness direction due to a difference between strain generated in a center of the active layer and strain generated in the lower cover layer when voltage is applied thereto.

### Claim 7 (depends on 1)

The multilayered ceramic capacitor of claim 1, wherein the number of stacked dielectric layers is 150 or more.

### Claim 8

A board for mounting a multilayered ceramic capacitor, the board comprising:
a printed circuit board having first and second electrode pads formed thereon; and
a multilayered ceramic capacitor mounted on the printed circuit board,
wherein the multilayered ceramic capacitor includes:
a ceramic body in which a plurality of dielectric layers having an average thickness of 0.2 to 2.0 μm are stacked;
an active layer including a plurality of first and second internal electrodes formed to be alternately exposed to both end surfaces of the ceramic body, having the dielectric layer interposed therebetween, to form capacitance;
an upper cover layer formed above the active layer;
a lower cover layer formed below the active layer and being thicker than the upper cover layer; and
first and second external electrodes formed on the both end surfaces of the ceramic body and connected to the first and second electrode pads by soldering,
the dielectric layer being configured of dielectric grains, and
when an average thickness of the dielectric layer is defined as td (μm), an average thickness of the first and second internal electrodes is defined as to (μm), and an average grain size of the dielectric grains is defined as Da (μm), Da≦td/3 and 0.2 μm<te<(td)1/2 are satisfied.

### Claim 9 (depends on 8)

The board of claim 8, wherein when half of a total thickness of the ceramic body is defined as A, a thickness of the lower cover layer is defined as B, half of a total thickness of the active layer is defined as C, and a thickness of the upper cover layer is defined as D, a ratio ((B+C)/A) of deviation between a center of the active layer and a center of the ceramic body is in a range of 1.063 to 1.745 (1.063≦(B+C)/A≦1.745).

### Claim 10 (depends on 8)

The board of claim 8, wherein when a thickness of the lower cover layer is defined as B and a thickness of the upper cover layer is defined as D, a ratio (D/B) of the thickness D of the upper cover layer to the thickness B of the lower cover layer is in a range of 0.021 to 0.422 (0.021≦D/B≦0.422).

### Claim 11 (depends on 8)

The board of claim 8, wherein half of a total thickness of the ceramic body is defined as A and a thickness of the lower cover layer is defined as B, a ratio (B/A) of the thickness B of the lower cover layer to the half A of the thickness of the ceramic body is in a range of 0.329 to 1.522 (0.329≦B/A≦1.522).

### Claim 12 (depends on 8)

The board of claim 8, wherein when a thickness of the lower cover layer is defined as B and half of a total thickness of the active layer is defined as C, a ratio (C/B) of the half C of the thickness of the active layer to the thickness B of the lower cover layer is in a range of 0.146 to 2.458 (0.146≦C/B≦2.458).

### Claim 13 (depends on 8)

The board of claim 8, wherein points of inflection (PI) formed in both end surfaces of the ceramic body are formed in positions lower than a height of the soldering due to a difference between strain generated in a center of the active layer and strain generated in the lower cover layer when voltage is applied thereto.

### Claim 14 (depends on 8)

The board of claim 8, wherein the number of stacked dielectric layers is 150 or more.
