# US 2014/0153002 A1 · Display substrate and method of measuring pattern dimensions of display substrate

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- Number: US 2014/0153002 A1
- Document ID: US20140153002A1
- Status: Published application
- Kind: A1
- Application number: 13/834,858
- Filed: 2013-03-15
- Published: 2014-06-05
- Earliest claimed: 2012-11-30
- Assignees: Samsung Display Co., Ltd.
- Applicants: Samsung Display Co., Ltd.
- Inventors: YONG JUN PARK; HYUNGJUN KIM; YOUNG SUK LEE; JONGSOO LEE
- Web page: https://patentgrep.com/patent/US20140153002A1

## CPC

- G09G 3/006: {Electronic inspection or testing of displays and display drivers, e.g. of LED or LCD displays (testing individual LED's G01R31/2635; testing lamps G01R31/44; testing of optical features of LCD displays G02F1/1309)}
- G03F 7/70625: {Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness}
- G09G: ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION (arrangements for transferring data between digital computers and displays G06F3/14; static indicating arrangements comprising an association of a number of separate sources or light control cells G09F9/00; static indicating arrangements comprising integral associations of a number of light sources H01J, H01K, H10H, H05B33/12; scanning, transmission or reproduction of documents or the like, e.g. facsimile transmission, details thereof H04N1/00)
- G03F: PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR; (phototypographic composing devices B41B; photosensitive materials or processes for photographic purposes G03C; electrophotography, sensitive layers or processes therefor G03G)

## Abstract

A display panel includes a plurality of pixel areas and at least one inspection area. An incident light is irradiated onto an inspection pattern disposed in the inspection area and a reflection light reflected by the inspection pattern is detected. An optical critical dimension of the inspection pattern is calculated from the reflection light, and a dimension of a pixel pattern disposed in each pixel area is calculated from the optical critical dimension of the inspection pattern. Accordingly, the dimension of the pixel pattern may be indirectly measured from the inspection pattern.

## Claims

### Claim 1

A method of measuring a pattern dimension of a display substrate, comprising:
irradiating incident light onto an inspection pattern of a display substrate, the display substrate including a plurality of pixel areas and one or more inspection areas, the inspection pattern being disposed in at least one inspection area of the inspection areas;
detecting reflection light reflected by the inspection pattern;
calculating an optical critical dimension of the inspection pattern from the reflection light; and
calculating a dimension of a pixel pattern disposed in each of the pixel areas from the optical critical dimension of the inspection pattern.

### Claim 2 (depends on 1)

The method of claim 1, wherein the inspection pattern comprises a plurality of diffraction grids extending in a first direction and spaced apart from each other in a second direction, and a width of each diffraction grid corresponds to a wavelength of the incident light.

### Claim 3 (depends on 2)

The method of claim 2, wherein the optical critical dimension of the inspection pattern comprises at least one of the width in the second direction of the diffraction grids, a distance between adjacent diffraction grids, and a height of the diffraction grids.

### Claim 4 (depends on 2)

The method of claim 2, wherein the display substrate comprises:
a base substrate;
a plurality of gate lines disposed on the base substrate;
a plurality of data lines crossing the gate lines; and
a plurality of pixels disposed in the pixel areas, respectively.

### Claim 5 (depends on 4)

The method of claim 4, wherein each of the pixels comprises:
a thin film transistor connected to a corresponding gate line and a corresponding data line; and
a pixel electrode connected to the thin film transistor and including at least one cut-away portion, wherein the pixel pattern comprises at least one of a portion of the thin film transistor and the cut-away portion.

### Claim 6 (depends on 5)

The method of claim 5, wherein the inspection area corresponds to a portion of at least one pixel area.

### Claim 7 (depends on 6)

The method of claim 6, wherein the diffraction grids comprise a plurality of first diffraction grids and a plurality of second diffraction grids disposed on a different layer from the first diffraction grids.

### Claim 8 (depends on 7)

The method of claim 7, wherein the thin film transistor and the pixel electrode are disposed on different layers, the first diffraction grids are disposed on the same layer as a portion of the thin film transistor, and the second diffraction grids are disposed on the same layer as the pixel electrode.

### Claim 9 (depends on 8)

The method of claim 8, wherein the first diffraction grids comprise a same material as the portion of the thin film transistor, and the second diffraction grids comprise a same material as the pixel electrode.

### Claim 10 (depends on 6)

The method of claim 6, wherein an area of a pixel disposed in the at least one pixel area having an inspection area is smaller than an area of a pixel disposed in a pixel area not having an inspection area.

### Claim 11

A display substrate comprising:
a base substrate that includes a plurality of pixel areas and at least one inspection area;
a plurality of gate lines disposed on a the base substrate that extend in a first direction;
a plurality of data lines insulated from the gate lines that extend in a second direction crossing the first direction;
a plurality of pixels disposed in the pixel areas, respectively; and
an inspection pattern disposed in at least one inspection area, wherein each of the pixels comprises:
a thin film transistor connected to a corresponding gate line and a corresponding data line; and
a pixel electrode connected to the thin film transistor and including at least one cut-away portion, wherein the inspection pattern comprises a plurality of diffraction grids extending in the first direction and spaced apart from each other in the second direction.

### Claim 12 (depends on 11)

The display substrate of claim 11, wherein the at least one inspection area corresponds to a portion of at least one pixel area.

### Claim 13 (depends on 12)

The display substrate of claim 12, wherein an area of the pixel disposed in the at least one pixel area having an inspection area is smaller than an area of a pixel disposed in a pixel area not having an inspection area.

### Claim 14 (depends on 11)

The display substrate of claim 11, wherein the diffraction grids comprise a plurality of first di action grids and a plurality of second diffraction grids disposed on a different layer from the first diffraction grids.

### Claim 15 (depends on 14)

The display substrate of claim 14, wherein the thin film transistor and the pixel electrode are disposed on different layers from each other, the first diffraction grids are disposed on the same layer as a portion of the thin film transistor, and the second diffraction grids are disposed on the same layer as the pixel electrode.

### Claim 16

A method of measuring a pattern dimension of a display substrate, comprising:
calculating an optical critical dimension of an inspection pattern of a display substrate from light reflected by the inspection pattern; and
calculating a dimension of a pixel pattern disposed in each of a plurality of pixel areas in the display substrate from the optical critical dimension of the inspection pattern,
wherein the inspection pattern comprises a plurality of diffraction grids extending in a first direction and spaced apart from each other in a second direction,
wherein the optical critical dimension of the inspection pattern comprises at least one of the width in the second direction of the diffraction grids, a distance between adjacent diffraction grids, and a height of the diffraction grids.

### Claim 17 (depends on 16)

The method of claim 16, further comprising:
irradiating incident light onto the inspection pattern of a display substrate; and
detecting reflection light reflected by the inspection pattern,
wherein the display substrate includes a plurality of pixels disposed in the pixel areas and one or more inspection areas, the inspection pattern being disposed in at least one inspection area of the inspection areas, and a width of each diffraction grid corresponds to a wavelength of the incident light.

### Claim 18 (depends on 17)

The method of claim 17, wherein each of the pixels comprises:
a thin film transistor; and
a pixel electrode connected to the thin film transistor and including at least one cut-away portion, wherein the pixel pattern comprises at least one of a portion of the thin film transistor and the cut-away portion, wherein the thin film transistor and the pixel electrode are disposed on different layers.

### Claim 19 (depends on 18)

The method of claim 18, wherein the inspection area corresponds to a portion of at least one pixel area.

### Claim 20 (depends on 19)

The method of claim 19, wherein the diffraction grids comprise a plurality of first diffraction grids disposed on the same layer as a portion of the thin film transistor and a plurality of second diffraction grids disposed on the same layer as the pixel electrode, the first diffraction grids comprise a same material as the portion of the thin film transistor, and the second diffraction grids comprise a same material as the pixel electrode.
