# US 2014/0152936 A1 · Semiconductor materials, transistors including the same, and electronic devices including transistors

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- Number: US 2014/0152936 A1
- Document ID: US20140152936A1
- Status: Published application
- Kind: A1
- Application number: 14/093,153
- Filed: 2013-11-29
- Published: 2014-06-05
- Earliest claimed: 2012-11-30
- Assignees: Samsung Display Co., Ltd.; Samsung Electronics Co., Ltd.
- Applicants: Samsung Electronics Co., Ltd.
- Inventors: Tae-sang KIM; Sun-jae KIM; Hyun-suk KIM; Myung-kwan RYU; Joon-seok PARK; Seok-jun SEO; Jong-baek SEON; Kyoung-seok SON
- Web page: https://patentgrep.com/patent/US20140152936A1

## CPC

- H10D 62/80: characterised by the materials
- H10D 30/6755: {Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate}
- H10D 30/6756: {Amorphous oxide semiconductors}
- H10D 30/6757: {characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile (TFTs having channel structures for preventing kink or snapback effects H10D30/6708; TFTs having lightly-doped source or drain extensions H10D30/6715)}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

According to example embodiments, a semiconductor material may include zinc, nitrogen, and fluorine. The semiconductor material may further include oxygen. The semiconductor material may include a compound. For example, the semiconductor material may include zinc fluorooxynitride. The semiconductor material may include zinc oxynitride containing fluorine. The semiconductor material may include zinc fluoronitride. The semiconductor material may be applied as a channel material of a thin film transistor (TFT).

## Claims

### Claim at position 1

-15. (canceled)

### Claim 16

A semiconductor material comprising:
zinc (Zn),
fluorine (F),
oxygen (O), and
nitrogen (N).

### Claim 17 (depends on 16)

The semiconductor material of claim 16, wherein the semiconductor material includes zinc fluorooxynitride.

### Claim 18 (depends on 16)

The semiconductor material of claim 16, wherein the semiconductor material includes zinc oxynitride containing fluorine.

### Claim 19 (depends on 16)

The semiconductor material of claim 16, wherein the semiconductor material includes a compound semiconductor.

### Claim 20 (depends on 16)

The semiconductor material of claim 16, wherein the semiconductor material is a quaternary compound.

### Claim 21 (depends on 16)

The semiconductor material of claim 16, wherein a content ratio of fluorine to a sum of nitrogen, oxygen, and fluorine in the semiconductor material is equal to or greater than about 3 at %.

### Claim 22 (depends on 21)

The semiconductor material of claim 21, wherein the content ratio of fluorine to the sum of nitrogen, oxygen, and fluorine in the semiconductor material ranges from about 5 at % to about 35 at %.

### Claim 23 (depends on 16)

The semiconductor material of claim 16, wherein a content ratio of nitrogen to a sum of nitrogen, oxygen, and fluorine in the semiconductor material is equal to or greater than about 50 at %.

### Claim 24 (depends on 23)

The semiconductor material of claim 23, wherein the content ratio of nitrogen to the sum of nitrogen, oxygen, and fluorine in the semiconductor material ranges from about 60 at % to about 90 at %.

### Claim 25 (depends on 16)

The semiconductor material of claim 16, wherein a content ratio of oxygen to a sum of nitrogen, oxygen, and fluorine in the semiconductor material is equal to or smaller than about 40 at %.

### Claim 26 (depends on 25)

The semiconductor material of claim 25, wherein the content ratio of oxygen to the sum of nitrogen, oxygen, and fluorine in the semiconductor material ranges from about 5 at % to about 30 at %.

### Claim 27 (depends on 16)

The semiconductor material of claim 16, wherein a Hall mobility of the semiconductor material is equal to or greater than about 10 cm2/Vs.

### Claim 28 (depends on 16)

The semiconductor material of claim 16, wherein the semiconductor material includes an amorphous phase.

### Claim 29 (depends on 16)

The semiconductor material of claim 16, wherein the semiconductor material includes a nanocrystalline phase.

### Claim 30 (depends on 16)

The semiconductor material of claim 16, further comprising:
at least one of a Group I element, a Group II element, a Group III element, a Group IV element, a Group V element, a transition metal element, and a Lanthanide (Ln) element.

### Claim 31 (depends on 16)

The semiconductor material of claim 16, further comprising:
at least one of lithium (Li), potassium (K), magnesium (Mg), calcium (Ca), strontium (Sr), barium (Ba), gallium (Ga), aluminum (Al), indium (In), boron (B), silicon (Si), tin (Sn), germanium (Ge), antimony (Sb), yttrium (Y), titanium (Ti), zirconium (Zr), vanadium (V), niobium (Nb), tantalum (Ta), scandium (Sc), hafnium (Hf), molybdenum (Mo), manganese (Mn), iron (Fe), cobalt (Co), nickel (Ni), copper (Cu), tungsten (W), lanthanum (La), cerium (Ce), praseodymium (Pr), neodymium (Nd), promethium (Pm), samarium (Sm), europium (Eu), gadolinium (Gd), terbium (Tb), dysprosium (Dy), holmium (Ho), erbium (Er), thulium (Tm), ytterbium (Yb), and lutetium (Lu).

### Claim 32 (depends on 16)

The semiconductor material of claim 16, wherein the semiconductor material includes a compound composed of zinc (Zn), fluorine (F), oxygen (O), and nitrogen (N).

### Claim 33 (depends on 16)

A thin film transistor (TFT) comprising:
a channel element including the semiconductor material of claim 16;
a gate electrode corresponding to the channel element;
a gate insulating layer that between the channel element and the gate electrode, the gate insulating layer contacting the gate electrode and the channel; and
a source electrode and a drain electrode that respectively contact first and second regions of the channel element.

### Claim 34 (depends on 33)

The TFT of claim 33, wherein a field-effect mobility of the TFT is equal to or greater than about 10 cm2/Vs.

### Claim 35 (depends on 33)

The TFT of claim 33, wherein a subthreshold swing (S.S.) value of the TFT is equal to or lower than about 0.95 V/dec.

### Claim 36 (depends on 33)

The TFT of claim 33, wherein the channel element is on the gate electrode.

### Claim 37 (depends on 33)

The TFT of claim 33, further comprising:
an etch-stop layer on the channel element.

### Claim 38 (depends on 33)

The TFT of claim 33, wherein the gate electrode is on the channel element.

### Claim 39 (depends on 38)

The TFT of claim 38, wherein
the channel element corresponds to a first region of an active layer,
the source and the drain electrodes are on both ends of the channel element, and
the gate insulating layer and the gate electrode are sequentially stacked on the first region of the active layer.

### Claim 40 (depends on 33)

The TFT of claim 33, wherein
the gate insulating layer includes a first layer and a second layer,
the first layer is between the gate electrode and the second layer,
the second layer is between the first layer and the channel element,
the first layer includes silicon nitride, and
the second layer includes silicon oxide.

### Claim 41 (depends on 33)

The TFT of claim 33, further comprising:
a passivation layer covering the TFT,
wherein the passivation layer includes a silicon oxide layer and a silicon nitride layer that are sequentially stacked.

### Claim 42 (depends on 33)

The TFT of claim 33, wherein at least one of the gate electrode, the source electrode, and the drain electrode has a tri-layer electrode structure.

### Claim 43 (depends on 42)

The TFT of claim 42, wherein
the tri-layer electrode structure includes a first layer, a second layer, and a third layer that are sequentially stacked,
at least one of the first layer and the third layer include one of titanium (Ti), molybdenum (Mo), and a combination thereof, and
the second layer includes one of aluminum (Al), aluminum-neodymium (AlNd), copper (Cu), and a combination thereof.

### Claim 44 (depends on 33)

An electronic device comprising:
the thin film transistor (TFT) of claim 33.

### Claim 45 (depends on 44)

The electronic device of claim 44, wherein the electronic device is a display apparatus.

### Claim 46 (depends on 45)

The electronic device of claim 45, wherein the display apparatus is one of an organic light-emitting display apparatus and a liquid crystal display apparatus.