# US 2014/0152881 A1 · Solid-state imaging device, manufacturing method thereof, and camera with alternately arranged pixel combinations > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2014/0152881 A1 - Document ID: US20140152881A1 - Status: Published application - Kind: A1 - Application number: 14/175,289 - Filed: 2014-02-07 - Published: 2014-06-05 - Earliest claimed: 2009-07-24 - Assignees: Sony Corporation - Applicants: Sony Corporation - Inventors: Hiroaki Ishiwata; Sanghoon Ha - Web page: https://patentgrep.com/patent/US20140152881A1 ## CPC - H10F 39/8053: {Colour filters} - H04N 25/134: {based on three different wavelength filter elements} - H04N 25/76: Addressed sensors, e.g. MOS or CMOS sensors - H04N 25/77: Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components - H04N 25/78: Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters - H10F 39/024: {of coatings or optical elements} - H10F 39/182: {Colour image sensors} - H10F 39/8027: {Geometry of the photosensitive area} - H10F 39/803: {Pixels having integrated switching, control, storage or amplification elements} - H10F 39/8037: {the integrated elements comprising a transistor} - H10F 39/806: {Optical elements or arrangements associated with the image sensors} - H10F 39/8063: {Microlenses} - H04N 2209/045: using mosaic colour filter - H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION - H04N: PICTORIAL COMMUNICATION, e.g. TELEVISION ## Abstract A solid-state imaging device includes a semiconductor substrate; and a pixel unit having a plurality of pixels on the semiconductor substrate, wherein the pixel unit includes first pixel groups having two or more pixels and second pixel groups being different from the first pixel groups, wherein a portion of the pixels in the first pixel groups and a portion of the pixels in the second pixel groups share a floating diffusion element. ## Claims ### Claim 1 A solid-state imaging device, comprising: a semiconductor substrate; and a pixel unit having a plurality of pixels on the semiconductor substrate, wherein the pixel unit includes first pixel groups having two or more pixels and second pixel groups being different from the first pixel groups, wherein a portion of the pixels in the first pixel groups and a portion of the pixels in the second pixel groups share a floating diffusion element. ### Claim 2 (depends on 1) The solid-state imaging device according to claim 1, further comprising an amplifying element, wherein a portion of the amplifying element shares the portion of the pixels in the first pixel groups and the portion of the pixels in the second pixel groups. ### Claim 3 (depends on 1) The solid-state imaging device according to claim 1, further comprising a reset element, wherein a portion of the reset element shares the portion of the pixels in the first pixel groups and the portion of the pixels in the second pixel groups. ### Claim 4 (depends on 1) The solid-state imaging device according to claim 1, further comprising a select element, wherein a portion of the select element shares the portion of the pixels in the first pixel groups and the portion of the pixels in the second pixel groups. ### Claim 5 (depends on 1) The solid-state imaging device according to claim 1, wherein respective ones of the plurality of pixels in the pixel unit include a photoelectric conversion element which generates a charge corresponding to an incident light. ### Claim 6 (depends on 5) The solid-state imaging device according to claim 5, wherein the respective ones of the plurality of pixels in the pixel unit further include a transfer element which transfers the charge from the photoelectric conversion element to the floating diffusion element. ### Claim 7 (depends on 1) The solid-state imaging device according to claim 1, wherein a lens unit is formed on the semiconductor substrate and includes a plurality of on-chip lenses. ### Claim 8 (depends on 7) The solid-state imaging device according to claim 7, wherein the on-chip lenses formed on the first pixel groups are different in size from the on-chip lenses formed on the second pixel groups. ### Claim 9 (depends on 8) The solid-state imaging device according to claim 8, further comprising a film unit that includes an insulating layer or a light waveguide layer, wherein the film unit is formed between the lens unit and the pixel unit. ### Claim 10 (depends on 7) The solid-state imaging device according to claim 7, wherein the on-chip lenses formed on the first pixel groups are the same size as the on-chip lenses formed on the second pixel groups. ### Claim 11 (depends on 10) The solid-state imaging device according to claim 10, further comprising a film unit that includes an insulating layer or a light waveguide layer, wherein the film unit is formed between the lens unit and the pixel unit. ### Claim 12 A solid-state imaging system comprising: a solid-state imaging device in which a plurality of pixels are integrated on a light sensing surface; an optical system which guides incident light to an imaging unit of the solid-state imaging device; and a signal processing circuit which processes output signals of the solid-state imaging device, wherein the solid-state imaging device includes: a semiconductor substrate; and a pixel unit having a plurality of pixels on the semiconductor substrate, wherein the pixel unit includes first pixel groups having two or more pixels and second pixel groups being different from the first pixel groups, wherein a portion of the pixels in the first pixel groups and a portion of the pixels in the second pixel groups share a floating diffusion element. ### Claim 13 (depends on 12) The solid-state imaging system according to claim 12, further comprising an amplifying element, wherein a portion of the amplifying element shares the portion of the pixels in the first pixel groups and the portion of the pixels in the second pixel groups. ### Claim 14 (depends on 12) The solid-state imaging system according to claim 12, further comprising a reset element, wherein a portion of the reset element shares the portion of the pixels in the first pixel groups and the portion of the pixels in the second pixel groups. ### Claim 15 (depends on 12) The solid-state imaging system according to claim 12, further comprising a select element, wherein a portion of the select element shares the portion of the pixels in the first pixel groups and the portion of the pixels in the second pixel groups. ### Claim 16 (depends on 12) The solid-state imaging system according to claim 12, wherein respective ones of the plurality of pixels in the pixel unit include a photoelectric conversion element which generates a charge corresponding to an incident light. ### Claim 17 (depends on 16) The solid-state imaging system according to claim 16, wherein the respective ones of the plurality of pixels in the pixel unit further include a transfer element which transfers the charge from the photoelectric conversion element to the floating diffusion element. ### Claim 18 (depends on 12) The solid-state imaging system according to claim 12, wherein a lens unit is formed on the semiconductor substrate and includes a plurality of on-chip lenses. ### Claim 19 (depends on 18) The solid-state imaging system according to claim 18, wherein the on-chip lenses formed on the first pixel groups are different in size from the on-chip lenses formed on the second pixel groups. ### Claim 20 (depends on 19) The solid-state imaging system according to claim 19, further comprising a film unit that includes an insulating layer or a light waveguide layer, wherein the film unit is formed between the lens unit and the pixel unit. ### Claim 21 (depends on 18) The solid-state imaging system according to claim 18, wherein the on-chip lenses formed on the first pixel groups are the same size as the on-chip lenses formed on the second pixel groups. ### Claim 22 (depends on 21) The solid-state imaging system according to claim 21, further comprising a film unit that includes an insulating layer or a light waveguide layer, wherein the film unit is formed between the lens unit and the pixel unit.