# US 2014/0152393 A1 · Surface emitting laser device and atomic oscillator > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2014/0152393 A1 - Document ID: US20140152393A1 - Status: Published application - Kind: A1 - Application number: 14/069,541 - Filed: 2013-11-01 - Published: 2014-06-05 - Earliest claimed: 2012-11-30 - Assignees: Ricoh Company, Ltd. - Inventors: Hiroshi Motomura; Shunichi SATO - Web page: https://patentgrep.com/patent/US20140152393A1 ## CPC - H01S 5/18355: {having a defined polarisation} - G04F 5/14: using atomic clocks - G04F 5/145: {using Coherent Population Trapping} - H01S 5/18377: {comprising layers of different kind of materials, e.g. combinations of semiconducting with dielectric or metallic layers} - H01S 5/18394: {Apertures, e.g. defined by the shape of the upper electrode} - H01S 5/423: {having a vertical cavity} - H01S 5/18347: {Mesa comprising active layer} - H01S 5/1835: {Non-circular mesa} - H01S 5/4087: {emitting more than one wavelength} - H01S: DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL - G04F: TIME-INTERVAL MEASURING (measuring pulse characteristics G01R, e.g. G01R29/02; in radar or like systems G01S) ## Abstract Disclosed is a surface emitting laser device, including a substrate; a lower reflecting mirror provided on the substrate; an active layer provided on the lower reflecting mirror; an upper reflecting mirror provided on the active layer, including an emitting region, laser light being emitted from the emitting region, the upper reflecting mirror being formed by alternately laminating dielectrics, refracting indices of the dielectrics being different from each other; and an adjusting layer formed of semiconductor, provided in the emitting region between the active layer and the upper reflecting mirror, a shape of the adjusting layer in a plane parallel to a surface of the substrate including shape anisotropy in two mutually perpendicular directions. ## Claims ### Claim 1 A surface emitting laser device, comprising: a substrate; a lower reflecting mirror provided on the substrate; an active layer provided on the lower reflecting mirror; an upper reflecting mirror provided on the active layer, the upper reflecting mirror being formed by alternately laminating dielectrics, refracting indices of the dielectrics being different from each other; and an adjusting layer formed of semiconductor, provided in an emitting region between the active layer and the upper reflecting mirror, laser light being emitted from the emitting region, wherein a shape of the adjusting layer in a plane parallel to a surface of the substrate has shape anisotropy in two mutually perpendicular directions. ### Claim 2 (depends on 1) The surface emitting laser device as claimed in claim 1, further comprising: a spacer layer provided between the active layer and the upper reflecting mirror; a contact layer formed of semiconductor, provided between the spacer layer and the upper reflecting mirror; and an electrode connected to the contact layer, wherein the adjusting layer is provided between the contact layer and the upper reflecting mirror. ### Claim 3 (depends on 1) The surface emitting laser device as claimed in claim 1, wherein the adjusting layer includes a wavelength adjusting layer formed by laminating materials, a number of kinds of the materials being more than or equal to two. ### Claim 4 (depends on 3) The surface emitting laser device as claimed in claim 3, further comprising: a plurality of surface emitting lasers, each of which includes the substrate, the lower reflecting mirror, the active layer, the upper reflecting mirror, and the adjusting layer, wherein wavelengths of laser light emitted by the respective surface emitting lasers are made different from each other by changing a thickness of the adjusting layer. ### Claim 5 (depends on 3) The surface emitting laser device as claimed in claim 3, wherein the adjusting layer is formed by alternately laminating two kinds of semiconductor layers, and a thickness of the adjusting layer changes by removing a part of layer at each layer of the laminated semiconductor layers. ### Claim 6 (depends on 1) The surface emitting laser device as claimed in claim 1, wherein the substrate is a substrate, in which a normal direction of a principal surface is tilted to a crystal orientation <111> with respect to a crystal orientation <100>. ### Claim 7 (depends on 1) The surface emitting laser device as claimed in claim 1, wherein a wavelength of the laser light is one of 780.2 nm, 795.0 nm, 852.3 nm and 894.6 nm. ### Claim 8 A surface emitting laser device, comprising: a substrate; a lower reflecting mirror provided on the substrate; an active layer provided on the lower reflecting mirror; a first upper reflecting mirror provided on the active layer, the first upper reflecting mirror being formed by alternately laminating semiconductors, refracting indices of the semiconductors being different from each other; a second upper reflecting mirror provided on the first upper reflecting mirror, the second upper reflecting mirror being formed by alternately laminating dielectrics, refracting indices of the dielectrics being different from each other; and an adjusting layer formed of semiconductor, provided in an emitting region between the first upper reflecting mirror and the second upper reflecting mirror, laser light being emitted from the emitting region, wherein a shape of the adjusting layer in a plane parallel to a surface of the substrate has shape anisotropy in two mutually perpendicular directions. ### Claim 9 (depends on 8) The surface emitting laser device as claimed in claim 8, further comprising: a contact layer formed of semiconductor, provided between the first upper reflecting mirror and the second upper reflecting mirror; and an electrode connected to the contact layer, wherein the adjusting layer is provided between the contact layer and the second upper reflecting mirror. ### Claim 10 (depends on 8) The surface emitting laser device as claimed in claim 8, wherein the adjusting layer includes a wavelength adjusting layer formed by laminating materials, a number of kinds of the materials being more than or equal to two. ### Claim 11 (depends on 10) The surface emitting laser device as claimed in claim 10, further comprising: a plurality of surface emitting lasers, each of which includes the substrate, the lower reflecting mirror, the active layer, the first upper reflecting mirror, the second upper reflecting mirror, and the adjusting layer, wherein wavelengths of laser light emitted by the respective surface emitting lasers are made different from each other by changing a thickness of the adjusting layer. ### Claim 12 (depends on 10) The surface emitting laser device as claimed in claim 10, wherein the adjusting layer is formed by alternately laminating two kinds of semiconductor layers, and a thickness of the adjusting layer changes by removing a part of layer at each layer of the laminated semiconductor layers. ### Claim 13 (depends on 8) The surface emitting laser device as claimed in claim 8, wherein the substrate is a substrate, in which a normal direction of a principal surface is tilted to a crystal orientation <111> with respect to a crystal orientation <100>. ### Claim 14 (depends on 8) The surface emitting laser device as claimed in claim 8, wherein a wavelength of the laser light is one of 780.2 nm, 795.0 nm, 852.3 nm and 894.6 nm. ### Claim 15 (depends on 1) An atomic oscillator, comprising: the surface emitting laser device as claimed in claim 1; an alkali metal cell that encapsulates alkali metal; a light detecting unit that detects light transmitted through the alkali metal cell, the light being emitted from a surface emitting laser of the surface emitting laser device; and a modulating unit that modulates the surface emitting laser device, wherein a signal outputted from the light detecting unit is transmitted to the modulating unit, and the modulating unit modulates the surface emitting laser device with a modulating frequency, which is determined based on a transmitted light quantity detected by the light detecting unit.