# US 2014/0152373 A1 · Power module having stacked substrates arranged to provide tightly-coupled source and return current paths > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2014/0152373 A1 - Document ID: US20140152373A1 - Status: Published application - Kind: A1 - Application number: 14/094,977 - Filed: 2013-12-03 - Published: 2014-06-05 - Earliest claimed: 2012-12-05 - Assignees: Lockheed Martin Corporation - Applicants: Lockheed Martin Corporation - Inventors: Gregory George Romas, JR.; David L. Hoelscher; Thomas Eugene Byrd - Web page: https://patentgrep.com/patent/US20140152373A1 ## CPC - H10W 90/00: Package configurations - H10W 44/501: {Inductive arrangements (H10W44/20 takes precedence)} - H10W 72/07554: {changes in dispositions} - H10W 90/753: {between laterally-adjacent chips} - H10W 90/754: {between a chip and a stacked insulating package substrate, interposer or RDL} - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract Power modules with reduced parasitic inductances are provided. A power module includes a first substrate including a first electrically-conductive layer and a second substrate including a second electrically-conductive layer. These substrates may be stacked on each other. A scalable network of power switches may be arranged on the substrates. Power bars may be connectable to the electrically-conductive layers through electromechanical interfaces at selectable interface locations. The locations and/or type of interface may be selectable based on the arrangement of the switches. The first and second electrically-conductive layers may be disposed on mutually opposed surfaces of a dielectric layer having a thickness chosen to effect a level of coupling between respective source and return current paths provided by the electrically-conductive layers. The level of coupling may be arranged to increase the mutual inductance within the power module, which can effectively reduce the formation of parasitic inductance in the power module. ## Claims ### Claim 1 A power module comprising: a first substrate comprising at least a first electrically-conductive layer; a second substrate comprising at least a second electrically-conductive layer, the first and second substrates being stacked on each other; a scalable network of power semiconductor switches arranged on at least one of the first and second substrates; and a first power bar and a second power bar, wherein the first power bar and the second power bar are respectively connectable to the first and second electrically-conductive layers through respective electromechanical interfaces arranged at selectable interface locations along the first and second electrically-conductive layers, the interface locations and/or type of interface being selectable based on the arrangement of the scalable network of power semiconductor switches, wherein the first and second electrically-conductive layers are disposed on mutually opposed surfaces of a dielectric layer having a thickness chosen to effect a level of coupling between respective source and return current paths provided by the first and second electrically-conductive layers, the level of coupling arranged to increase the mutual inductance within said power module. ### Claim 2 (depends on 1) The power module of claim 1, wherein the scalable network of power semiconductor switches comprises a first power semiconductor switch disposed on the second substrate and having a respective source current path at least in part being constituted by said at least second electrically-conductive layer. ### Claim 3 (depends on 2) The power module of claim 2, wherein the scalable network of power semiconductor switches further comprises a second power semiconductor switch disposed on the first substrate and having a respective return current path at least in part being constituted by said at least first electrically-conductive layer. ### Claim 4 (depends on 3) The power module of claim 3, further comprising a bond wire arranged to electrically interconnect to one another respective source terminals of said first and second power semiconductor switches. ### Claim 5 (depends on 2) The power module of claim 2, wherein the first and second power bars comprise a creepage barrier interposed between one another. ### Claim 6 (depends on 3) The power module of claim 3, further comprising a first diode having its cathode connected to a drain terminal of the first power semiconductor switch and its anode connected to a source terminal of the first power semiconductor switch, and a second diode having its cathode connected to a drain terminal of the second power semiconductor switch and its anode connected to a source terminal of the second power semiconductor switch. ### Claim 7 (depends on 3) The power module of claim 3, wherein the first and second power semiconductor switches comprise a respective high-temperature, wide bandgap semiconductor material. ### Claim 8 (depends on 8) The power module of claim 8, wherein the high-temperature, wide bandgap semiconductor material is selected from the group consisting of silicon carbide, gallium nitride and aluminum nitride semiconductor material. ### Claim 9 (depends on 1) The power module of claim 1, wherein the scalable network of power semiconductor switches comprises a first power semiconductor switch disposed on the first substrate and having a respective source current path at least in part constituted by said at least first electrically-conductive layer, the first power semiconductor switch having a respective return current path at least in part being constituted by said at least second electrically-conductive layer. ### Claim 10 (depends on 1) The power module of claim 1, wherein the scalable network of power semiconductor switches further comprises a second power semiconductor switch disposed on the first substrate and having a respective current return path at least in part being constituted by another second electrically-conductive layer in the second substrate, the second power semiconductor switch having a respective source current path at least in part being constituted by another first electrically-conductive layer in the first substrate. ### Claim 11 (depends on 9) The power module of claim 9, further comprising a first bond wire arranged to electrically connect a source terminal of said first power semiconductor switch to said at least second electrically-conductive layer in the second substrate. ### Claim 12 (depends on 11) The power module of claim 11, further comprising a second bond wire arranged to electrically connect a source terminal of said second power semiconductor switch to said another second electrically-conductive layer in the second substrate. ### Claim 13 (depends on 12) The power module of claim 12, wherein the first and second power bars comprise a creepage barrier interposed between one another. ### Claim 14 (depends on 13) The power module of claim 13, further comprising a third power bar connectable, through a respective electromechanical interface arranged at a selectable interface location, to said another first electrically-conductive layer in the first substrate, and a fourth power bar connectable, through a respective electromechanical interface arranged at a selectable interface location, to said another second electrically-conductive layer in the second substrate, the interface locations and/or type of interface being selectable based on the arrangement of the scalable network of power semiconductor switches, the third and fourth power bars comprising a creepage barrier interposed between one another, wherein the second power bar is arranged to receive a first voltage from a direct current (DC) link, wherein the fourth power bar is arranged to receive a second voltage from a direct current (DC) link, wherein the first and second voltages have opposite voltage polarity, wherein the first and fourth power bars are arranged to supply electrical power to respective sides of a load. ### Claim 15 (depends on 12) The power module of claim 12, further comprising a first diode having its cathode connected to a drain terminal of the first power semiconductor switch and its anode connected to a source terminal of the first power semiconductor switch, and a second diode having its cathode connected to a drain terminal of the second power semiconductor switch and its anode connected to a source terminal of the second power semiconductor switch. ### Claim 16 (depends on 10) The power module of claim 10, wherein the first and second power semiconductor switches comprise a respective high-temperature, wide bandgap semiconductor material. ### Claim 17 (depends on 8) The power module of claim 8, wherein the high-temperature, wide bandgap semiconductor material is selected from the group consisting of silicon carbide, gallium nitride and aluminum nitride semiconductor material. ### Claim 18 A power module comprising: a first substrate comprising at least a first electrically-conductive layer; and a second substrate comprising at least a second electrically-conductive layer, the first and second substrates being stacked on each other, wherein the first and second electrically-conductive layers are disposed on mutually opposed surfaces of a dielectric layer having a thickness chosen to effect a level of coupling between respective source and return current paths provided by the first and second electrically-conductive layers, the level of coupling arranged to increase the mutual inductance within said power module; a first power semiconductor switch disposed on the second substrate and having a respective source current path at least in part being constituted by said at least second electrically-conductive layer; and a second power semiconductor switch disposed on the first substrate and having a respective return current path at least in part being constituted by said at least first electrically-conductive layer. ### Claim 19 A bi-directional blocking switch comprising the power module of clam 18. ### Claim 20 A power module comprising: a first substrate comprising at least a first electrically-conductive layer; and a second substrate comprising at least a second electrically-conductive layer, the first and second substrates being stacked on each other, wherein the first and second electrically-conductive layers are disposed on mutually opposed surfaces of a dielectric layer having a thickness chosen to effect a level of coupling between respective source and return current paths provided by the first and second electrically-conductive layers, the level of coupling arranged to increase the mutual inductance within said power module; a first power semiconductor switch disposed on the first substrate and having a respective source current path at least in part constituted by said at least first electrically-conductive layer, the first power semiconductor switch having a respective return current path at least in part being constituted by said at least second conductive layer; and a second power semiconductor switch disposed on the first substrate and having a respective return current path at least in part being constituted by another second electrically-conductive layer in the second substrate, the second power semiconductor switch having a respective source current path at least in part being constituted by another first electrically-conductive layer in the first substrate. ### Claim 21 (depends on 20) A half-bridge drive comprising the power module of claim 20.