# US 2014/0152338 A1 · Electronic device reliability measurement system and method > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2014/0152338 A1 - Document ID: US20140152338A1 - Status: Published application - Kind: A1 - Application number: 13/950,939 - Filed: 2013-07-25 - Published: 2014-06-05 - Earliest claimed: 2012-12-04 - Assignees: Electronics and Telecommunications Research Institute - Applicants: Electronics and Telecommunications Research Institute - Inventors: Jongmin LEE; Byoung-Gue Min; Chull Won Ju - Web page: https://patentgrep.com/patent/US20140152338A1 ## CPC - G01R 31/2608: {for testing bipolar transistors} - G01R 31/2621: {for testing field effect transistors, i.e. FET's} - G01R 31/2632: {for testing diodes} - G01R: MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES (indicating correct tuning of resonant circuits H03J3/12) ## Abstract Provided is a low-cost and high-efficient system for measuring reliability of an electronic device. According to the present invention, a single input power source for applying power to an input terminal of a plurality of electronic device samples and a single output power source for applying power to an output terminal of the plurality of electronic device samples are provided. Further, an input switch having first switches of which the number corresponds to the number of the plurality of electronic device samples, the input switch being installed between the input power source and the input terminal so that the first switches are selectively switched to apply input power; and an output switch having second switches of which the number corresponds to the number of the plurality of electronic device samples, the output switch being installed between the output power source and the output terminal so that the second switches are selectively switched to apply output power are provided. ## Claims ### Claim 1 A electronic device reliability measurement system comprising: a single input power source for applying power to an input terminal of a plurality of electronic device samples; a single output power source for applying power to an output terminal of the plurality of electronic device samples; an input switch having first switches of which the number corresponds to the number of the plurality of electronic device samples, the input switch being installed between the input power source and the input terminal so that the first switches are selectively switched to apply input power; and an output switch having second switches of which the number corresponds to the number of the plurality of electronic device samples, the output switch being installed between the output power source and the output terminal so that the second switches are selectively switched to apply output power. ### Claim 2 (depends on 1) The electronic device reliability measurement system of claim 1, wherein the number of the input power source is one in the case where the number of the plurality of electronic device samples is increased. ### Claim 3 (depends on 1) The electronic device reliability measurement system of claim 1, wherein the number of the output power source is one in the case where the number of the plurality of electronic device samples is increased. ### Claim 4 (depends on 1) The electronic device reliability measurement system of claim 1, wherein the plurality of electronic device samples are field effect transistors. ### Claim 5 (depends on 1) The electronic device reliability measurement system of claim 1, wherein the plurality of electronic device samples are bipolar junction transistors. ### Claim 6 (depends on 1) The electronic device reliability measurement system of claim 1, wherein the plurality of electronic device samples are diodes. ### Claim 7 (depends on 1) The electronic device reliability measurement system of claim 1, wherein, in the case where a kth sample among the plurality of electronic device samples is tested, a kth switch among the first switches is switched. ### Claim 8 (depends on 1) The electronic device reliability measurement system of claim 1, wherein, in the case where a kth sample among the plurality of electronic device samples is tested, a kth switch among the second switches is switched. ### Claim 9 (depends on 1) The electronic device reliability measurement system of claim 1, wherein a test on the plurality of electronic device samples comprises a DC measurement on the samples. ### Claim 10 (depends on 1) The electronic device reliability measurement system of claim 1, wherein a test on the plurality of electronic device samples comprises an RF measurement on the samples. ### Claim 11 (depends on 1) The electronic device reliability measurement system of claim 1, wherein a test on the plurality of electronic device samples comprises a power characteristic measurement on the samples. ### Claim 12 A electronic device reliability measuring method comprising: providing a single input power source for applying power to an input terminal of a plurality of electronic device samples and a single output power source for applying power to an output terminal of the plurality of electronic device samples; installing an input switch having a plurality of first switches and selectively switched so as to apply input power to the input terminal and an output switch having a plurality of second switches and selectively switched so as to apply output power to the output terminal; and applying the input power and the output power to at least one of the plurality of electronic device samples by selectively switching the first switches of the input switch and the second switches of the output switch, thereby testing reliability of the plurality of electronic device. ### Claim 13 (depends on 12) The electronic device reliability measuring method of claim 12, wherein the testing of reliability comprises performing a initial measurement and a stress test and then monitoring characteristics of the electronic device sample being tested. ### Claim 14 (depends on 13) The electronic device reliability measuring method of claim 13, wherein the monitoring of characteristics of the electronic device sample comprises identifying occurrence of characteristic abnormality, performing a broken-down device identifying test on the samples, and then flagging a broken-down device. ### Claim 15 (depends on 14) The electronic device reliability measuring method of claim 14, further comprising performing an intermediate measurement and a final measurement after performing a stress test on a normal device, after the flagging of a broken-down device. ### Claim 16 An electronic device reliability measuring method for performing a reliability test on electronic device samples by monitoring output voltages and output currents of the electronic device samples by applying a single input power source to the electronic device sample or one of the electronic device samples through at least one of first switches, and applying a single output power source to the electronic device sample or one of the electronic device samples through at least one of second switches. ### Claim 17 (depends on 16) The electronic device reliability measuring method of claim 16, wherein the electronic device samples are field effect transistors or bipolar junction transistors. ### Claim 18 (depends on 16) The electronic device reliability measuring method of claim 16, wherein the electronic device samples are diodes. ### Claim 19 (depends on 16) The electronic device reliability measuring method of claim 16, wherein the reliability test comprises a DC measurement on the samples. ### Claim 20 (depends on 16) The electronic device reliability measuring method of claim 16, wherein the reliability test comprises an RF measurement or a power characteristic measurement on the samples.