# US 2014/0152337 A1 · Structure and method for in-line defect non-contact tests > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2014/0152337 A1 - Document ID: US20140152337A1 - Status: Published application - Kind: A1 - Application number: 13/705,213 - Filed: 2012-12-05 - Published: 2014-06-05 - Earliest claimed: 2012-12-05 - Assignees: International Business Machines Corporation - Applicants: International Business Machines Corporation - Inventors: Hanyi Ding; Kai D. Feng; Ping-Chuan Wang; Zhijian Yang - Web page: https://patentgrep.com/patent/US20140152337A1 ## CPC - H10P 74/207: {Electrical properties, e.g. testing or measuring of resistance, deep levels or capacitance-voltage characteristics} - G01R 31/2644: {Adaptations of individual semiconductor devices to facilitate the testing thereof} - G01R 31/50: Testing of electric apparatus, lines, cables or components for short-circuits, continuity, leakage current or incorrect line connections (testing of sparking plugs H01T13/58) - H10P 74/277: {Circuits for electrically characterising or monitoring manufacturing processes, e.g. circuits in tested chips or circuits in testing wafers} - G01R 31/2884: {using dedicated test connectors, test elements or test circuits on the IC under test (G01R31/2855 takes precedence)} - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 - G01R: MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES (indicating correct tuning of resonant circuits H03J3/12) ## Abstract A system, method and apparatus may comprise a wafer having a plurality of spiral test structures located on the kerf of the wafer. The spiral test structure may comprise a spiral connected at either end by a capacitor to allow the spiral test structure to resonate. The spiral structures may be located on a first metal layer or on multiple metal layers. The system may further incorporate a test apparatus having a frequency transmitter and a receiver. The test apparatus may be a sensing spiral which may be placed over the spiral test structures. A controller may provide a range of frequencies to the test apparatus and receiving the resonant frequencies from the test apparatus. The resonant frequencies will be seen as reductions in signal response at the test apparatus. ## Claims ### Claim 1 A method comprising: forming a spiral test structure on a wafer, the spiral test structure having a capacitor; providing a frequency signal to the spiral test structure from a test apparatus; monitoring a reflected resonant frequency from the spiral test structure; and determining if an open is present in the spiral test structure. ### Claim 2 (depends on 1) The method of claim 1 wherein the test apparatus comprises a sensing spiral, wherein the sensing spiral is placed over the spiral test structure. ### Claim 3 (depends on 1) The method of claim 1 wherein the frequency signal has a range of frequencies. ### Claim 4 (depends on 3) The method of claim 3 wherein the range of frequencies comprises frequencies from the range comprising 1 GHz to 5 GHz. ### Claim 5 (depends on 3) The method of claim 3 wherein the range of frequencies comprises frequencies from the range from 100 KHz to 10 GHz. ### Claim 6 (depends on 1) The method of claim 1 further comprising the step when an open is detected determining if the errors are acceptable, in the case errors are acceptable testing additional spiral test structures. ### Claim 7 (depends on 6) The method of claim 6, wherein if the errors are not acceptable determining if the wafer can be reworked. ### Claim 8 A system comprising: a wafer comprising a plurality of spiral test structures; a test apparatus, comprising a frequency transmitter and a receiver; and a controller for providing a range of frequencies to the test apparatus and receiving the resonant frequencies from the test apparatus. ### Claim 9 (depends on 8) The system of claim 8, wherein the spiral test structures are located on at least a first metal layer of the wafer. ### Claim 10 (depends on 9) The system of claim 9 wherein the spiral test structures are locate on the kerf of the wafer. ### Claim 11 (depends on 8) The system of claim 8 wherein the spiral test structures are located on multiple metal layers of the wafer. ### Claim 12 (depends on 8) The system of claim 8 wherein the test apparatus comprises a sensing spiral. ### Claim 13 (depends on 11) The system of claim 11 wherein the range of frequencies are between one and five GHz. ### Claim 14 (depends on 8) The system of claim 8, further comprising a plurality of test apparatus. ### Claim 15 (depends on 12) The system of claim 12, further comprising a plurality of test apparatus. ### Claim 16 An apparatus comprising: a spiral winding on a metal layer of a wafer; and a capacitor connected to either end of said spiral winding, wherein the apparatus resonates when a frequency signal is presented to apparatus and the resonant frequency changes when a short or an open is present. ### Claim 17 (depends on 16) The apparatus of claim 16, wherein the spiral winding is located in the kerf of the wafer. ### Claim 18 (depends on 16) The apparatus of claim 16, wherein the capacitor is a front end of line capacitor. ### Claim 19 (depends on 16) The apparatus of claim 16, wherein the capacitor is a back end of line capacitor. ### Claim 20 (depends on 16) The apparatus of claim 16, wherein the spiral winding has a dimension of a wire less than 75 nm's wide. ### Claim 21 (depends on 16) The apparatus of claim 16, wherein the spiral winding further has a dimension of a wire greater than 100 nm's wide. ### Claim 22 A method comprising: forming a spiral test structure on a wafer, the spiral test structure having a capacitor; providing a frequency signal to the spiral test structure from a test apparatus; monitoring a reflected resonant frequency from the spiral test structure; and determining if a short is present in the spiral test structure. ### Claim 23 (depends on 22) The method of claim 22 wherein the test apparatus comprises a sensing spiral, wherein the sensing spiral is placed over the spiral test structure. ### Claim 24 (depends on 22) The method of claim 22 wherein the frequency signal has a range of frequencies. ### Claim 25 (depends on 24) The method of claim 24 wherein the range of frequencies comprises frequencies from the range comprising 1 GHz to 5 GHz. ### Claim 26 (depends on 24) The method of claim 24 wherein the range of frequencies comprises frequencies from the range from 100 KHz to 10 GHz. ### Claim 27 (depends on 22) The method of claim 22 further comprising the step when a short is detected determining if the errors are acceptable, in the case errors are acceptable testing additional spiral test structures. ### Claim 28 (depends on 27) The method of claim 27, wherein if the errors are not acceptable determining if the wafer can be reworked.