# US 2014/0152289 A1 · Reference Voltage Generator Circuit > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2014/0152289 A1 - Document ID: US20140152289A1 - Status: Published application - Kind: A1 - Application number: 14/097,095 - Filed: 2013-12-04 - Published: 2014-06-05 - Earliest claimed: 2012-12-05 - Assignees: iWatt Integrated Circuits Technology (Tianjin) Limited - Applicants: iWatt Integrated Circuits Technology (Tianjin) Limited - Inventors: Weihai Huang; Honglai Wang - Web page: https://patentgrep.com/patent/US20140152289A1 ## CPC - G05F 3/20: using diode- transistor combinations (G05F3/18 takes precedence) - G05F: SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES ## Abstract Various embodiments of the present invention relate to a reference voltage generator circuit. Specifically, the circuit may for example comprise: a mirror constant current source having a first branch and a second branch, wherein a first current on the first branch is proportional to a second current on the second branch; wherein the first branch has a first resistive element, and the second branch has two second resistive elements connected in series; and a power supply terminal located between said two second resistive elements on the second branch. A high-precision reference voltage relative to the voltage source can be provided at the power supply terminal by using the circuit provided by various embodiments of the present invention. ## Claims ### Claim 1 A reference voltage generator circuit, comprising: a mirror constant current source having a first branch and a second branch, wherein a first current on the first branch is proportional to a second current on the second branch; wherein the first branch has a first resistive element, and the second branch has two second resistive elements connected in series; and a power supply terminal located between said two second resistive elements on the second branch. ### Claim 2 (depends on 1) The reference voltage generator circuit according to claim 1, wherein a proportion of the first current on the first branch to the second current on the second branch is M:N, wherein M and N are integers greater than or equal to 1. ### Claim 3 (depends on 1) The reference voltage generator circuit according to claim 1, wherein the first branch has a first NPN bipolar transistor thereon, the second branch has a second NPN bipolar transistor thereon, the first NPN bipolar transistor and the second NPN bipolar transistor match each other, wherein a voltage between a base and an emitter is Vbe; wherein a base of the first NPN bipolar transistor is connected to a base of the second NPN bipolar transistor and connected to its own collector; an emitter of the first NPN bipolar transistor is connected to an emitter of the second NPN bipolar transistor; a collector of the first NPN bipolar transistor is connected to a high-accuracy reference voltage VR via the first resistive element; and a collector of the second NPN bipolar transistor is connected to a voltage source VDDH via the two second resistive elements. ### Claim 4 (depends on 3) The reference voltage generator circuit according to claim 3, wherein at least one of the following is included between the two second resistive elements and the voltage source VDDH: a third NPN bipolar transistor matchable with the first NPN bipolar transistor or the second NPN bipolar transistor, wherein a voltage between a base and an emitter is Vbe, its base and collector are connected to the voltage source VDDH, its emitter is connected to the two second resistive elements; and a diode matchable with the first NPN bipolar transistor or the second NPN bipolar transistor, wherein a voltage between a positive pole and a negative pole is Vd, its positive pole is connected to the voltage source VDDH, and its negative pole is connected to the two second resistive elements. ### Claim 5 (depends on 1) The reference voltage generator circuit according to claim 1, wherein the first branch has a first N-MOS transistor thereon, the second branch has a second N-MOS transistor thereon, and the first N-MOS transistor and the second N-MOS transistor match each other, wherein a voltage between a gate and a source is Vgs; wherein a gate of the first N-MOS transistor is connected to a gate of the second N-MOS transistor and connected to its own drain; a source of the first N-MOS transistor is connected to a source of the second N-MOS transistor; a drain of the first N-MOS transistor is connected to a high-accuracy reference voltage VR via the first resistive element; and the drain of the second N-MOS transistor is connected to a voltage source VDDH via the two second resistive elements. ### Claim 6 (depends on 5) The reference voltage generator circuit according to claim 5, wherein at least one of the following is included between the two second resistive elements and the voltage source VDDH: a P-MOS transistor matchable with the first N-MOS transistor or the second N-MOS transistor, wherein a voltage between the gate and source is Vgs, its source is connected to the voltage source VDDH, and its gate and drain are connected to the two second resistive elements; and a diode matchable with the first N-MOS transistor or the second N-MOS transistor, wherein a voltage between a positive pole and a negative pole is Vd, its positive pole is connected to the voltage source VDDH, and its negative pole is connected to the two second resistive elements. ### Claim 7 (depends on 1) The reference voltage generator circuit according to claim 1, further comprising generating a desired reference voltage VREF relative to the voltage source VDDH at the power supply terminal by adjusting a ratio of the two second resistive elements on the second branch to the first resistive element on the first branch. ### Claim 8 (depends on 7) The reference voltage generator circuit according to claim 7, wherein the adjusting comprise: adjusting a ratio of the second resistive elements on the second branch between the voltage source VDDH and the reference voltage to the first resistive element on the first branch to make the ratio equal to a ratio of a difference between the VDDH and the VREF plus Vd/Vbe/Vgs to a difference between VR and Vd/Vbe/Vgs; and adjusting a ratio of another second resistive element on the second branch to the first resistive element on the first branch to make the ratio equal to a ratio of a difference between the VREF and the Vd/Vbe/Vgs to the difference between VR and the Vd/Vbe/Vgs. ### Claim 9 (depends on 1) The reference voltage generator circuit according to claim 1, wherein the reference voltage generator circuit is located on a substrate of the same region of an integrated circuit. ### Claim 10 (depends on 1) The reference voltage generator circuit according to claim 1, wherein the resistive elements are resistors. ### Claim 11 (depends on 1, 2, 3, 4, 5, 6, 7, 8, 9, 10) An integrated circuit, comprising the reference voltage generator circuit according to one of claims 1-10.