# US 2014/0151898 A1 · Far back end of the line stack encapsulation

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- Number: US 2014/0151898 A1
- Document ID: US20140151898A1
- Status: Published application
- Kind: A1
- Application number: 13/967,986
- Filed: 2013-08-15
- Published: 2014-06-05
- Earliest claimed: 2012-12-04
- Assignees: International Business Machines Corporation
- Applicants: International Business Machines Corporation
- Inventors: Tymon Barwicz; Robert L. Bruce; Swetha Kamlapurkar
- Web page: https://patentgrep.com/patent/US20140151898A1

## CPC

- H10W 74/131: {the semiconductor body being only partially enclosed}
- H10W 20/056: {by filling conductive material into holes, grooves or trenches}
- H10W 20/076: {in via holes or trenches}
- H10W 20/089: {using processes for implementing desired shapes or dispositions of the openings, e.g. double patterning}
- H10W 42/121: {protecting against mechanical damage (H10W76/00, H10W74/00 take precedence)}
- H10W 74/147: {the encapsulations being multilayered}
- H10W 20/023: {the interconnections being through-semiconductor vias}
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

A method for far back end of the line (FBEOL) protection of a semiconductor device includes forming a patterned layer over a back end of the line (BEOL) stack, depositing a first conformal protection layer on the patterned layer which covers horizontal surfaces of a top surface and sidewalls of openings formed in the patterned layer. A resist layer is patterned over the first conformal protection layer such that openings in the resist layer correspond with the openings in the patterned layer. The first conformal protection layer is etched through the openings in the resist layer to form extended openings that reach a stop position. The resist layer is removed, and a second conformal protection layer is formed on the first conformal protection layer and on sidewalls of the extended openings to form an encapsulation boundary to protect at least the patterned layer and a portion of the BEOL stack.

## Claims

### Claim 1

A semiconductor device having protected far back end of the line (FBEOL) structures, comprising:
a substrate;
a front end of the line (FEOL) stack formed on the substrate;
a back end of the line (BEOL) stack formed over the FEOL stack; and
an encapsulation boundary conformally formed over the BEOL stack covering horizontal surfaces and sidewalls of extended openings which extend into at least the BEOL stack to a stop position to protect at least a portion of the BEOL stack.

### Claim 2 (depends on 1)

The device as recited in claim 1, wherein the encapsulation boundary includes a first conformal protection layer formed over and in openings of a patterned layer, the patterned layer being formed over the BEOL stack, the first conformal protection layer including a low temperature dielectric where low temperature is below 400 degrees C.

### Claim 3 (depends on 2)

The device as recited in claim 2, wherein the encapsulation boundary further includes a second conformal protection layer formed over the first conformal protection layer and on the sidewalls of the extended openings down to the stop position, the second conformal layer including a low temperature dielectric where low temperature is below 400 degrees C.

### Claim 4 (depends on 1)

The device as recited in claim 1, wherein the stop position includes a position within at least one of the BEOL stack; a front end of the line (FEOL) stack below the BEOL stack; and a substrate below the FEOL stack and below the BEOL stack.

### Claim 5 (depends on 1)

The device as recited in claim 1, further comprising a surface at the stop position exposed to permit contact with an underlying portion.

### Claim 6 (depends on 5)

The device as recited in claim 5, further comprising contacts formed through the extended openings to the underlying portion at the stop position.

### Claim 7 (depends on 1)

The device as recited in claim 1, wherein the encapsulation boundary is configured to protect at least the portion of the BEOL stack from at least wet etching.