# US 2014/0151883 A1 · Method for manufacturing a semiconductor component and structure therefor > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2014/0151883 A1 - Document ID: US20140151883A1 - Status: Published application - Kind: A1 - Application number: 13/692,514 - Filed: 2012-12-03 - Published: 2014-06-05 - Earliest claimed: 2012-12-03 - Assignees: Semiconductor Components Industries, LLC - Applicants: Semiconductor Components Industries, LLC - Inventors: Phillip Celaya; James P. Letterman, JR.; Robert L. Marquis - Web page: https://patentgrep.com/patent/US20140151883A1 ## CPC - H10P 54/00: Cutting or separating of wafers, substrates or parts of devices - H10W 70/424: {Cross-sectional shapes (H10W70/481 takes precedence)} - H10W 70/457: {of metallic layers on leadframes} - H10W 74/014: {using batch processing} - H10W 72/0198: {batch processes} - H10W 72/29: Bond pads specially adapted therefor - H10W 72/5449: {not being orthogonal to a side surface of the chip, e.g. fan-out arrangements} - H10W 72/884: {Die-attach connectors and bond wires} - H10W 72/932: {Plan-view shape, i.e. in top view} - H10W 74/00: Encapsulations, e.g. protective coatings - H10W 74/10: characterised by their shape or disposition - H10W 74/111: {the semiconductor body being completely enclosed} - H10W 90/726: {between a chip and a stacked lead frame, conducting package substrate or heat sink} - H10W 90/736: {between a chip and a stacked lead frame, conducting package substrate or heat sink} - H10W 90/756: {between a chip and a stacked lead frame, conducting package substrate or heat sink} - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract A semiconductor component having wettable leadframe lead surfaces and a method of manufacture. A leadframe having leadframe leads is embedded in a mold compound. A portion of at least one leadframe lead is exposed and an electrically conductive material is formed on the exposed portion. The mold compound is separated to form singulated semiconductor components. ## Claims ### Claim 1 A method for manufacturing a semiconductor component, comprising: providing a leadframe partially embedded in a mold compound, the leadframe having a first major surface and a second major surface opposite the first major surface, the leadframe comprising a plurality of flags, a plurality of leads, and a tiebar, and wherein a semiconductor device is coupled to the first major surface of a first flag; exposing a first edge, the first edge extending from the second major surface a first distance toward the first major surface, wherein the first distance is less than the thickness of the leadframe and greater than fifty percent of the thickness of the leadframe; forming a first material over a portion of the first edge; separating the leadframe into at least two portions; and separating the mold compound into at least two portions. ### Claim 2 (depends on 1) The method of claim 1, wherein exposing the first edge comprises sawing the leadframe. ### Claim 3 (depends on 1) The method of claim 1, wherein exposing the first edge comprises etching the leadframe. ### Claim 4 (depends on 1) The method of claim 1, wherein exposing the first edge comprises removing a portion of the tiebar and leaving a remaining portion of the tiebar. ### Claim 5 (depends on 4) The method of claim 4, wherein separating the leadframe into at least two portions comprises separating the remaining portion of the tiebar into at least two portions. ### Claim 6 (depends on 5) The method of claim 5, wherein separating the remaining portion of the tiebar into at least two portions comprises sawing through the remaining portion of the tiebar. ### Claim 7 (depends on 6) The method of claim 6, wherein separating the remaining portion of the tiebar into at least two portions and separating the mold compound into at least two portions comprises a single saw cut through the remaining portion of the tiebar and through the mold compound. ### Claim 8 (depends on 1) The method of claim 1, wherein forming the first material over a portion of the first edge comprises plating the first material. ### Claim 9 (depends on 1) The method of claim 1, wherein forming the first material over a portion of the first edge comprises electroplating the first material onto the first edge. ### Claim 10 (depends on 1) The method of claim 1, wherein forming the first material over a portion of the first edge comprises forming an electrically conductive material over the portion of the first edge. ### Claim 11 (depends on 10) The method of claim 10, wherein forming the first material over a portion of the first edge comprises forming an anti-oxidizing coating over the first edge. ### Claim 12 (depends on 1) The method of claim 1, wherein forming the first material over a portion of the first edge includes barrel plating the first material over the portion of the first edge. ### Claim 13 (depends on 1) The method of claim 1, wherein the first material comprises tin. ### Claim 14 (depends on 1) The method of claim 1, wherein separating the mold compound into at least two portions comprises sawing through the mold compound. ### Claim 15 A semiconductor component, comprising: a semiconductor device coupled to an electrical interconnect structure, wherein the semiconductor device is embedded in a mold compound and the electrical interconnect structure is partially embedded in the mold compound, and wherein the electrical interconnect structure comprises a plurality of leads, each lead having an outer edge; and a first material over a portion of the outer edge of at least one of the plurality of leads, the first material over more than fifty percent of the outer edge but less than one hundred percent of the outer edge of the least one of the plurality of leads. ### Claim 16 (depends on 15) The semiconductor component of claim 15, wherein the first material was plated over the portion of the outer edge of at least one of the plurality of leads. ### Claim 17 (depends on 15) The semiconductor component of claim 15, wherein the first material comprises an electrically conductive material. ### Claim 18 (depends on 15) The semiconductor component of claim 15, wherein the first material comprises tin. ### Claim 19 An automobile, comprising: an engine compartment; a semiconductor component within the engine compartment, the semiconductor component comprising a semiconductor device coupled to an electrical interconnect structure, wherein the semiconductor device is embedded in a mold compound and the electrical interconnect structure is partially embedded in the mold compound, and wherein the electrical interconnect structure comprises a lead having an outer edge; and a first material comprising tin plated over more than fifty percent and less than one hundred percent of the outer edge of the lead. ### Claim 20 A method for manufacturing a semiconductor component, comprising: providing a semiconductor device coupled to one or more electrical interconnect structures partially embedded in a mold compound; sawing a trench into a portion of the one or more electrical interconnect structures and exposing a sidewall of the trench, wherein the trench sidewall extends a first distance into the portion of the one or more electrical interconnect structures, and wherein the first distance is less than the thickness of the one or more electrical interconnect structures and greater than fifty percent of the thickness of the one or more electrical interconnect structures; electroplating a first material over the exposed sidewall of the trench; and sawing completely through the trench and mold compound.