# US 2014/0151873 A1 · Semiconductor device and semiconductor device manufacturing method

> Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt

- Number: US 2014/0151873 A1
- Document ID: US20140151873A1
- Status: Published application
- Kind: A1
- Application number: 14/018,109
- Filed: 2013-09-04
- Published: 2014-06-05
- Earliest claimed: 2012-09-21
- Assignees: Sony Corporation
- Applicants: Sony Corporation
- Inventors: Takayuki Tanaka; Kana Iwami
- Web page: https://patentgrep.com/patent/US20140151873A1

## CPC

- H10W 72/90: Bond pads, in general
- H10W 72/0113: {Apparatus for manufacturing die-attach connectors}
- H10W 72/072: {of bump connectors}
- H10W 74/012: {of encapsulations on active surfaces of flip-chip devices, e.g. forming underfills}
- H10W 74/15: on active surfaces of flip-chip devices, e.g. underfills
- H10W 90/00: Package configurations
- H10W 72/01308: {using permanent auxiliary members, e.g. using alignment marks}
- H10W 72/01323: {in liquid form, e.g. by dispensing droplets or by screen printing}
- H10W 72/073: {of die-attach connectors}
- H10W 72/29: Bond pads specially adapted therefor
- H10W 72/354: {comprising polymers}
- H10W 72/387: {Flow barriers}
- H10W 72/931: {Shapes of bond pads}
- H10W 90/722: {between stacked chips}
- H10W 90/724: {between a chip and a stacked insulating package substrate, interposer or RDL}
- H10W 90/732: {between stacked chips}
- H10W 90/734: {between a chip and a stacked insulating package substrate, interposer or RDL}
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

A semiconductor device including a first semiconductor chip and a second semiconductor chip which are bump bonded to each other with a clearance therebetween sealed with resin injected from a prescribed position on the first semiconductor chip in a manner that a space between bumps formed by bump bonding is filled with the resin, and a plurality of concave and convex sections which are formed on a surface side of the first semiconductor chip, the surface being bonded with the second semiconductor chip, and have a protruding section which straddles at least one convex section out of convex sections of the plurality of concave and convex sections formed in a surrounding section of a bonding region between the first semiconductor chip and the second semiconductor chip.

## Claims

### Claim 1

A semiconductor device comprising:
a first semiconductor chip and a second semiconductor chip which are bump bonded to each other with a clearance therebetween sealed with resin injected from a prescribed position on the first semiconductor chip in a manner that a space between bumps formed by bump bonding is filled with the resin; and
a plurality of concave and convex sections which are formed on a surface side of the first semiconductor chip, the surface being bonded with the second semiconductor chip, and have a protruding section which straddles at least one convex section out of convex sections of the plurality of concave and convex sections formed in a surrounding section of a bonding region between the first semiconductor chip and the second semiconductor chip.

### Claim 2 (depends on 1)

The semiconductor device according to claim 1,
wherein a longitudinal direction of the plurality of concave and convex sections is a direction parallel to an advancing direction on the first semiconductor chip of the resin injected from the prescribed position, and
wherein the protruding section, when viewed from the injection position of the resin, is formed on a region of both side surface sides of the bonding region with the second semiconductor chip on the first semiconductor chip.

### Claim 3 (depends on 1)

The semiconductor device according to claim 1,
wherein a longitudinal direction of the plurality of concave and convex sections is a direction intersecting an advancing direction on the first semiconductor chip of the resin injected from the prescribed position, and
wherein the protruding section, when viewed from the injection position of the resin, is formed on a region of a back side of the bonding region with the second semiconductor chip on the first semiconductor chip.

### Claim 4 (depends on 1)

The semiconductor device according to claim 1,
wherein a longitudinal direction of the plurality of concave and convex sections is a direction intersecting an advancing direction on the first semiconductor chip of the resin injected from the prescribed position, and
wherein the protruding section, when viewed from the injection position of the resin, is formed on a region of a front side of the bonding region with the second semiconductor chip on the first semiconductor chip.

### Claim 5 (depends on 1)

The semiconductor device according to claim 1,
wherein the plurality of concave and convex sections is provided in accordance with a formation of wiring.

### Claim 6 (depends on 1)

The semiconductor device according to claim 1,
wherein the protruding section includes any of an epoxy, a polyimide, a polyamide, an acrylic, Al, P, Fe, Co, Ni, Cu, Zn, Ga, Ge, Ag, Cd, In, Sn, Sb, Au, Pb, and Bi.

### Claim 7 (depends on 1)

The semiconductor device according to claim 1,
wherein a height of the protruding section is 0.1 μm to 3 μm and a height of the convex section is 15 μm to 25 μm.

### Claim 8 (depends on 1)

The semiconductor device according to claim 1,
wherein a part of the protruding section cuts into an inside of the bonding region between the first semiconductor chip and the second semiconductor chip.

### Claim 9

A manufacturing method of a semiconductor device, comprising:
forming, on a first semiconductor chip having a plurality of concave and convex sections and bumps for bump bonding a second semiconductor chip formed on a surface side of the first semiconductor chip, a protruding section which straddles at least one convex section out of convex sections of the concave and convex sections formed in a surrounding section of a bonding region between the first semiconductor chip and the second semiconductor chip;
bump bonding the first semiconductor chip and the second semiconductor chip together; and
sealing a clearance between the first semiconductor chip and the second semiconductor chip by filling, with resin, a space between the bumps formed in accordance with the bump bonding by the bump bonding step, by injecting the resin from a prescribed position on the first semiconductor chip.