# US 2014/0151857 A1 · Method and system for binding halide-based contaminants > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2014/0151857 A1 - Document ID: US20140151857A1 - Status: Published application - Kind: A1 - Application number: 14/176,961 - Filed: 2014-02-10 - Published: 2014-06-05 - Earliest claimed: 2002-08-29 - Assignees: Micron Technology, Inc. - Applicants: Micron Technology, Inc. - Inventors: Garo J. Derderian; Cem Basceri; Donald L. Westmoreland - Web page: https://patentgrep.com/patent/US20140151857A1 ## CPC - H10D 62/10: Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies - B01J 20/3483: {by thermal treatment not covered by groups B01J20/3441 - B01J20/3475, e.g. by heating or cooling} - B01J 38/02: Heat treatment - C23C 16/08: from metal halides - C23C 16/34: Nitrides {(C23C16/303 takes precedence)} - C23C 16/4404: {Coatings or surface treatment on the inside of the reaction chamber or on parts thereof} - C23C 16/4412: {Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps} - H10P 95/90: Thermal treatments, e.g. annealing or sintering - H10W 42/00: Arrangements for protection of devices (arrangements for thermal protection H10W40/00) - Y10T 428/31678: Of metal - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES - B01J: CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS - C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04) - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 - Y10T: TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION ## Abstract A method and apparatus are presented for reducing halide-based contamination within deposited titanium-based thin films. Halide adsorbing materials are utilized within the deposition chamber to remove halides, such as chlorine and chlorides, during the deposition process so that contamination of the titanium-based film is minimized. A method for regenerating the halide adsorbing material is also provided. ## Claims ### Claim 1 A semiconductor circuit comprising: a titanium-based film having a halide-based contaminant content of less than 1% due to adsorption of the halide-based contaminants by a material having a greater affinity for the halide-based contaminants than the titanium-based film. ### Claim 2 (depends on 1) The semiconductor of claim 1, wherein the halide is chlorine. ### Claim 3 (depends on 1) The semiconductor of claim 1, wherein the halide is iodine. ### Claim 4 (depends on 1) The semiconductor of claim 1, wherein the halide is bromine. ### Claim 5 (depends on 1) The semiconductor of claim 1, wherein the titanium-based film is titanium. ### Claim 6 (depends on 1) The semiconductor of claim 1, wherein the titanium-based film is titanium nitride. ### Claim 7 (depends on 1) The semiconductor of claim 1, wherein the titanium-based film is titanium silicide. ### Claim 8 (depends on 1) The semiconductor of claim 1, wherein the titanium-based film is titanium boride. ### Claim 9 (depends on 1) The semiconductor of claim 1, wherein the titanium-based film has between 0.1% and 1.0% chlorine-based contamination. ### Claim 10 (depends on 1) The semiconductor of claim 1, wherein the material comprises manganese. ### Claim 11 A method comprising, regenerating a material that has adsorbed halide-based contaminant due to an affinity for the halide-based contaminant that is sufficiently greater than that of a titanium-based film for a semiconductor circuit to limit a halide-based contaminant content of the titanium-based film, wherein regenerating comprises heating a deposition chamber in which the material is disposed until the halide-based contaminant is released. ### Claim 12 (depends on 11) The method of claim 11, wherein regenerating the material comprises regenerating a chlorine-adsorbing material by heating the chlorine-adsorbing material to release adsorbed chlorine. ### Claim 13 (depends on 11) The method of claim 11, wherein regenerating the material comprises regenerating a chloride-adsorbing material by heating the chloride-adsorbing material to release adsorbed chlorides or their constituent elements. ### Claim 14 (depends on 11) The method of claim 11, comprising adsorbing the halide-based contaminant in the deposition chamber with the material such that the halide-based contaminant content of the titanium-based film is limited to less than 1%. ### Claim 15 A system, comprising: a deposition chamber; a semiconductor circuit disposed within the deposition chamber; a material disposed within the deposition chamber; a titanium-based film of the semiconductor circuit, wherein the titanium-based film comprises a halide-based contaminants content of less than 1% due to adsorption of the halide-based contaminants by the material, wherein the material has a greater affinity for the halide-based contaminants than the titanium-based film. ### Claim 16 (depends on 15) The system of claim 15, wherein the material that has the greater affinity for the halide-based contaminants than the titanium-based film is a solid material. ### Claim 17 (depends on 15) The system of claim 15, wherein a shower head within the deposition chamber comprises the material that has the greater affinity for the halide-based contaminants than the titanium-based film. ### Claim 18 (depends on 15) The system of claim 15, wherein the material comprises manganese. ### Claim 19 (depends on 15) The system of claim 15, comprising hydrogen and a titanium source gas within the deposition chamber. ### Claim 20 (depends on 15) The system of claim 15, wherein the titanium-based film has between 0.1% and 1.0% chlorine-based contamination.