# US 2014/0151833 A1 · Photoelectric conversion device

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- Number: US 2014/0151833 A1
- Document ID: US20140151833A1
- Status: Published application
- Kind: A1
- Application number: 14/021,927
- Filed: 2013-09-09
- Published: 2014-06-05
- Earliest claimed: 2012-12-05
- Assignees: Electronics and Telecommunications Research Institute
- Applicants: Electronics and Telecommunications Research Institute
- Inventors: Chul HUH; Sang Hyeob KIM; Byoung Jun PARK; Eun Hye JANG; Myung Ae CHUNG
- Web page: https://patentgrep.com/patent/US20140151833A1

## CPC

- H10F 77/413: {directly associated or integrated with the devices, e.g. back reflectors (directly associated or integrated with photovoltaic cells H10F77/42)}
- H10F 30/221: the potential barrier being a PN homojunction
- H10F 77/244: {made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers}
- Y02E 10/52: PV systems with concentrators
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- Y02E: REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION

## Abstract

A photoelectric conversion device according to an exemplary embodiment includes a first substrate, a photoelectric conversion layer disposed above the first substrate, a second substrate which is different from the first substrate and disposed on the photoelectric conversion layer, and a nano pillar layer disposed above the second substrate in which the nano pillar layer includes a plurality of nano pillars which is spaced apart from each other, so as to easily absorb the light.

## Claims

### Claim 1

A photoelectric conversion device, comprising:
a first substrate;
a photoelectric conversion layer disposed above the first substrate;
a second substrate which is different from the first substrate and disposed above the photoelectric conversion layer; and
a nano pillar layer disposed above the second substrate,
wherein the nano pillar layer includes a plurality of nano pillars which is spaced apart from each other.

### Claim 2 (depends on 1)

The photoelectric conversion device of claim 1, wherein the first substrate is a P type semiconductor substrate.

### Claim 3 (depends on 1)

The photoelectric conversion device of claim 1, wherein the second substrate is an N type semiconductor substrate.

### Claim 4 (depends on 1)

The photoelectric conversion device of claim 1, further comprising:
a first electrode disposed below the first substrate.

### Claim 5 (depends on 1)

The photoelectric conversion device of claim 1, further comprising:
a second electrode disposed between the second substrate and the nano pillar layer,
wherein the second electrode includes:
a transparent electrode, and
a metal electrode disposed on at least one of the transparent electrode and the photoelectric conversion layer.

### Claim 6 (depends on 5)

The photoelectric conversion device of claim 5, wherein the transparent electrode includes at least one of ITO (indium tin oxide), SnO2, In2O2, CdSnO4, and ZnO.

### Claim 7 (depends on 1)

The photoelectric conversion device of claim 1, wherein the nano pillar layer includes at least one of ITO, SnO2, In2O2, Cd2SnO4, and ZnO.

### Claim 8 (depends on 1)

The photoelectric conversion device of claim 1, wherein the nano pillar layer refracts, reflects, and transmits the incident light toward the photoelectric conversion layer.

### Claim 9 (depends on 1)

The photoelectric conversion device of claim 1, wherein at least one of the plurality of nano pillars has at least one of a diameter and a length which is different from the others.

### Claim 10 (depends on 1)

The photoelectric conversion device of claim 1, wherein a diameter of at least one of the plurality of nano pillars is 1 nm to 1,000 nm.

### Claim 11 (depends on 1)

The photoelectric conversion device of claim 1, wherein a length of at least one of the plurality of nano pillars is 1 nm to 1 mm.

### Claim 12 (depends on 1)

The photoelectric conversion device of claim 1, wherein the plurality of nano pillars has at least one of ellipse, rod, and tube shapes.