# US 2014/0151802 A1 · Semiconductor Device Having SSOI Substrate

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- Number: US 2014/0151802 A1
- Document ID: US20140151802A1
- Status: Published application
- Kind: A1
- Application number: 13/690,240
- Filed: 2012-11-30
- Published: 2014-06-05
- Earliest claimed: 2012-11-30
- Assignees: International Business Machines Corporation
- Applicants: International Business Machines Corporation
- Inventors: Veeraraghavan S. Basker; Ali Khakifirooz; Pranita Kerber; Alexander Reznicek
- Web page: https://patentgrep.com/patent/US20140151802A1

## CPC

- H10D 30/024: {of fin field-effect transistors [FinFET]}
- H10D 86/011: {comprising FinFETs}
- H10D 86/215: {comprising FinFETs}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

A method comprises: forming a tensile SSOI layer on a buried oxide layer on a bulk substrate; forming a plurality of fins in the SSOI layer; removing a portion of the fins; annealing remaining portions of the fins to relax a tensile strain of the fins; and merging the remaining portions of the fins.

## Claims

### Claim 1

A method for fabricating a semiconductor device, comprising:
forming a tensile SSOI layer on a buried oxide layer on a bulk substrate;
forming a plurality of fins in the SSOI layer;
removing a portion of the fins;
annealing a remaining portion of the fins to relax a tensile strain of the fins; and
merging the remaining portions of the fins.

### Claim 2 (depends on 1)

The method of claim 1, wherein forming an SSOI layer on a buried oxide layer on a bulk substrate comprises slicing the SSOI layer from a donor substrate and bonding the SSOI layer to the buried oxide layer.

### Claim 3 (depends on 1)

The method of claim 1, wherein annealing a remaining portion of the fins comprises subjecting the SSOI layer to an elevated temperature.

### Claim 4 (depends on 3)

The method of claim 3, wherein subjecting the SSOI layer to an elevated temperature comprises pre-baking the SSOI layer at a temperature of about 700 degrees C. to about 900 degrees C. for about 2 minutes to about 30 minutes.

### Claim 5 (depends on 3)

The method of claim 3, wherein subjecting the SSOI layer to an elevated temperature comprises pre-baking the SSOI layer at a temperature of about 800 degrees C. for about 2 minutes.

### Claim 6 (depends on 1)

The method of claim 1, wherein merging the remaining portions of the fins comprises epitaxially growing at least one of Si and SiGe on the fins.

### Claim 7 (depends on 6)

The method of claim 6, wherein epitaxially growing at least one of Si and SiGe on the fins comprises depositing at least one of Si and SiGe on the fins and heating the fins to a temperature of about 500 degrees to about 850 degrees for about 20 minutes to about 40 minutes.

### Claim 8 (depends on 1)

The method of claim 1, wherein forming a plurality of fins in the SSOI layer comprises etching the SSOI layer.

### Claim 9

A method for fabricating a semiconductor device, comprising:
attaching a tensile SSOI layer to a first surface of a substrate;
forming a plurality of fins in the SSOI layer;
forming a gate across and transverse to the plurality of fins;
removing at least a portion of the fins using an etching technique;
subjecting remaining portions of the fins to an elevated temperature to relax a tensile strain of the fins;
merging the remaining portions of the fins on a source side of the gate using an epitaxial growth of at least one of Si and SiGe on the fins to form a merged source region; and
merging the remaining portions of the fins on a drain side of the gate using an epitaxial growth of at least one of Si and SiGe on the fins to form a merged drain region.

### Claim 10 (depends on 9)

The method of claim 9, wherein attaching an SSOI layer to a first surface of a substrate comprises removing a layer of SSOI from a donor substrate and bonding the layer of SSOI to the first surface of the substrate.

### Claim 11 (depends on 9)

The method of claim 9, wherein forming a plurality of fins in the SSOI layer comprises etching the SSOI layer.

### Claim 12 (depends on 9)

The method of claim 9, wherein subjecting the fins to an elevated temperature comprises subjecting the fins to a temperature of about 700 degrees C. to about 900 degrees C. for about 2 minutes to about 30 minutes.

### Claim 13 (depends on 9)

The method of claim 9, wherein subjecting the fins to an elevated temperature comprises subjecting the fins to a temperature of about 800 degree C. for about 2 minutes.

### Claim 14 (depends on 9)

The method of claim 9, further comprising forming source extension regions and drain extension regions under the gate.

### Claim 15 (depends on 14)

The method of claim 14, wherein the source extension regions and drain extension regions are formed under the gate by implantation of ions.

### Claim 16 (depends on 9)

The method of claim 9, further comprising doping the merged source region and the merged drain region with one or more of phosphorous and boron.

### Claim 17 (depends on 9)

The method of claim 9, further comprising forming silicide caps on upper surfaces of the merged source region and the merged drain region.

### Claim 18 (depends on 9)

The method of claim 9, wherein merging the remaining portions of the fins on a source side of the gate using an epitaxial growth of at least one of Si and SiGe on the fins to form a merged source region, and merging the remaining portions of the fins on a drain side of the gate using an epitaxial growth of at least one of Si and SiGe on the fins to form a merged drain region, comprises depositing at least one of Si and SiGe on the fins and heating the fins to a temperature of about 500 degrees to about 850 degrees for about 20 minutes to about 40 minutes.

### Claim at position 19

19-24. (canceled)