# US 2014/0151801 A1 · Uniform finfet gate height

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- Number: US 2014/0151801 A1
- Document ID: US20140151801A1
- Status: Published application
- Kind: A1
- Application number: 13/689,948
- Filed: 2012-11-30
- Published: 2014-06-05
- Earliest claimed: 2012-11-30
- Assignees: International Business Machines Corporation
- Applicants: International Business Machines Corporation
- Inventors: Balasubramanian S. Haran; Sanjay Mehta; Shom Ponoth; Ravikumar Ramachandran; Stefan Schmitz; Theodorus E. Standaert
- Web page: https://patentgrep.com/patent/US20140151801A1

## CPC

- H10D 64/514: {characterised by the insulating layers}
- H10D 30/0243: {using dummy structures having essentially the same shapes as the semiconductor bodies, e.g. to provide stability}
- H10D 64/013: {of electrodes having a conductor capacitively coupled to a semiconductor by an insulator}
- H10D 64/017: {using dummy gates in processes wherein at least parts of the final gates are self-aligned to the dummy gates, i.e. replacement gate processes}
- H10D 84/0158: {the components including FinFETs}
- H10D 84/038: {using silicon technology, e.g. SiGe}
- H10D 84/834: {comprising FinFETs}
- H10D 86/011: {comprising FinFETs}
- H10D 86/215: {comprising FinFETs}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

A method including providing a plurality of fins etched from a semiconductor substrate and covered by an oxide layer and a nitride layer, the oxide layer being located between the plurality of fins and the nitride layer, removing a portion of the plurality of fins to form an opening, and forming a dielectric spacer on a sidewall of the opening. The method may also include filling the opening with a fill material, wherein a top surface of the fill material is substantially flush with a top surface of the nitride layer, removing the nitride layer to form a gap between the plurality of fins and the fill material, wherein the fill material has re-entrant geometry extending over the gap, and removing the re-entrant geometry and causing the gap between the plurality of fins and the fill material to widen.

## Claims

### Claim 1

A method comprising:
providing a plurality of fins etched from a semiconductor substrate and covered by an oxide layer and a nitride layer, the oxide layer being located between the plurality of fins and the nitride layer;
removing a portion of the plurality of fins to form an opening;
forming a dielectric spacer on a sidewall of the opening;
filling the opening with a fill material, wherein a top surface of the fill material is substantially flush with a top surface of the nitride layer;
removing the nitride layer to form a gap between the plurality of fins and the fill material, wherein the fill material has re-entrant geometry extending over the gap; and
removing the re-entrant geometry and causing the gap between the plurality of fins and the fill material to widen.

### Claim 2 (depends on 1)

The method of claim 1, further comprising:
removing the oxide layer; and
recessing the fill material such that the top surface of the fill material is substantially flush with a top surface of the fins.

### Claim 3 (depends on 2)

The method of claim 2, further comprising:
forming a gate above and between the plurality of fins and the fill material.

### Claim 4 (depends on 1)

The method of claim 1, wherein forming the gate comprises using a gate first or a replacement gate process flow.

### Claim 5 (depends on 1)

The method of claim 1, wherein filling the opening with a fill material comprises depositing an oxide.

### Claim 6 (depends on 1)

The method of claim 1, wherein providing a plurality of fins etched from a semiconductor substrate comprises providing a bulk substrate or a semiconductor-on-insulator substrate.

### Claim 7

A structure comprising:
a first plurality of fins and a second plurality of fins etched from a semiconductor substrate; and
a fill material located above the semiconductor substrate and between the first plurality of fins and the second plurality of fins, wherein the fill material does not contact either the first plurality of fins or the second plurality of fins.

### Claim 8 (depends on 7)

The structure of claim 7, further comprising:
a gate located above and between the first plurality of fins, the second plurality of fins, and the fill material, wherein the gate comprises at least a different material than the fill material.

### Claim 9 (depends on 7)

The structure of claim 7, wherein the fill material is substantially the same height as the first plurality of fins and the second plurality of fins.

### Claim 10 (depends on 7)

The structure of claim 7, wherein the fill material comprises an oxide.

### Claim 11 (depends on 7)

The structure of claim 7, wherein the semiconductor substrate comprises a bulk substrate or a semiconductor-on-insulator substrate.